JPH09222719A - ハーフトーン位相シフトマスク及びその製造方法 - Google Patents

ハーフトーン位相シフトマスク及びその製造方法

Info

Publication number
JPH09222719A
JPH09222719A JP34818596A JP34818596A JPH09222719A JP H09222719 A JPH09222719 A JP H09222719A JP 34818596 A JP34818596 A JP 34818596A JP 34818596 A JP34818596 A JP 34818596A JP H09222719 A JPH09222719 A JP H09222719A
Authority
JP
Japan
Prior art keywords
phase shift
shift mask
exposure light
pattern
halftone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP34818596A
Other languages
English (en)
Japanese (ja)
Inventor
Kyoshun Kin
亨俊 金
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JPH09222719A publication Critical patent/JPH09222719A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP34818596A 1995-12-26 1996-12-26 ハーフトーン位相シフトマスク及びその製造方法 Pending JPH09222719A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR19950056971 1995-12-26
KR1995-P-056971 1995-12-26

Publications (1)

Publication Number Publication Date
JPH09222719A true JPH09222719A (ja) 1997-08-26

Family

ID=19444578

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34818596A Pending JPH09222719A (ja) 1995-12-26 1996-12-26 ハーフトーン位相シフトマスク及びその製造方法

Country Status (3)

Country Link
JP (1) JPH09222719A (zh)
KR (1) KR100219570B1 (zh)
TW (1) TW324073B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102033420A (zh) * 2009-09-29 2011-04-27 Hoya株式会社 光掩模及其制造方法、图案转印方法及液晶显示装置制作方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100355228B1 (ko) 2000-01-18 2002-10-11 삼성전자 주식회사 하프톤 위상반전 마스크 및 그 제조방법
TWI348590B (en) * 2004-03-31 2011-09-11 Shinetsu Chemical Co Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method
KR100732757B1 (ko) * 2005-05-18 2007-06-27 주식회사 하이닉스반도체 독립된 패턴 형성을 위한 마스크 및 이를 이용한 독립된패턴 형성방법
JP5615488B2 (ja) * 2008-06-30 2014-10-29 Hoya株式会社 位相シフトマスクの製造方法
TWI461833B (zh) * 2010-03-15 2014-11-21 Hoya Corp 多調式光罩、多調式光罩之製造方法及圖案轉印方法
US8298729B2 (en) * 2010-03-18 2012-10-30 Micron Technology, Inc. Microlithography masks including image reversal assist features, microlithography systems including such masks, and methods of forming such masks
KR101403391B1 (ko) * 2013-05-06 2014-06-03 주식회사 피케이엘 하프톤 위상반전마스크를 이용한 복합파장 노광 방법 및 이에 이용되는 하프톤 위상반전마스크
KR102337235B1 (ko) * 2019-08-05 2021-12-09 주식회사 포트로닉스 천안 하프톤 위상반전마스크 및 그 제조 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102033420A (zh) * 2009-09-29 2011-04-27 Hoya株式会社 光掩模及其制造方法、图案转印方法及液晶显示装置制作方法

Also Published As

Publication number Publication date
TW324073B (en) 1998-01-01
KR970049088A (ko) 1997-07-29
KR100219570B1 (ko) 1999-09-01

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