TW316856B - - Google Patents
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- Publication number
- TW316856B TW316856B TW084100067A TW84100067A TW316856B TW 316856 B TW316856 B TW 316856B TW 084100067 A TW084100067 A TW 084100067A TW 84100067 A TW84100067 A TW 84100067A TW 316856 B TW316856 B TW 316856B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- shading
- blank
- phase shifter
- item
- Prior art date
Links
- 238000010521 absorption reaction Methods 0.000 claims description 68
- 230000035515 penetration Effects 0.000 claims description 53
- 230000010363 phase shift Effects 0.000 claims description 50
- 239000000463 material Substances 0.000 claims description 45
- 230000008033 biological extinction Effects 0.000 claims description 24
- 238000011049 filling Methods 0.000 claims description 21
- 239000012528 membrane Substances 0.000 claims description 12
- 238000001514 detection method Methods 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- 230000002079 cooperative effect Effects 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 238000002835 absorbance Methods 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims 1
- 239000010432 diamond Substances 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 42
- 230000003287 optical effect Effects 0.000 description 32
- 238000000034 method Methods 0.000 description 26
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 230000008859 change Effects 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- 239000011159 matrix material Substances 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 239000012634 fragment Substances 0.000 description 8
- 230000003595 spectral effect Effects 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 7
- 239000011651 chromium Substances 0.000 description 7
- 210000002381 plasma Anatomy 0.000 description 7
- 238000002310 reflectometry Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 230000006698 induction Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 241000894007 species Species 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000005546 reactive sputtering Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 241000208340 Araliaceae Species 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 241000974840 Ellipes Species 0.000 description 2
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 2
- 235000003140 Panax quinquefolius Nutrition 0.000 description 2
- 238000001015 X-ray lithography Methods 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 210000004556 brain Anatomy 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 235000008434 ginseng Nutrition 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000010422 painting Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910052695 Americium Inorganic materials 0.000 description 1
- 241001164374 Calyx Species 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 241000287828 Gallus gallus Species 0.000 description 1
- 208000030984 MIRAGE syndrome Diseases 0.000 description 1
- 241001465754 Metazoa Species 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 241000239226 Scorpiones Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- OBOXTJCIIVUZEN-UHFFFAOYSA-N [C].[O] Chemical compound [C].[O] OBOXTJCIIVUZEN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- LXQXZNRPTYVCNG-UHFFFAOYSA-N americium atom Chemical compound [Am] LXQXZNRPTYVCNG-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009933 burial Methods 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- UBAZGMLMVVQSCD-UHFFFAOYSA-N carbon dioxide;molecular oxygen Chemical compound O=O.O=C=O UBAZGMLMVVQSCD-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000000567 combustion gas Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- TVLSRXXIMLFWEO-UHFFFAOYSA-N prochloraz Chemical compound C1=CN=CN1C(=O)N(CCC)CCOC1=C(Cl)C=C(Cl)C=C1Cl TVLSRXXIMLFWEO-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000009419 refurbishment Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Lasers (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/195,670 US5415953A (en) | 1994-02-14 | 1994-02-14 | Photomask blanks comprising transmissive embedded phase shifter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW316856B true TW316856B (enExample) | 1997-10-01 |
Family
ID=22722290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW084100067A TW316856B (enExample) | 1994-02-14 | 1995-01-06 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5415953A (enExample) |
| EP (1) | EP0745235B1 (enExample) |
| JP (1) | JP3595860B2 (enExample) |
| KR (1) | KR100362126B1 (enExample) |
| CN (1) | CN1122876C (enExample) |
| DE (1) | DE69509502T2 (enExample) |
| TW (1) | TW316856B (enExample) |
| WO (1) | WO1995022083A2 (enExample) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3440346B2 (ja) * | 1994-12-22 | 2003-08-25 | 大日本印刷株式会社 | ブラックマトリックス用クロムブランクスおよび液晶デイスプレイ用カラーフイルター |
| KR100225661B1 (ko) * | 1995-07-19 | 1999-10-15 | 야마나까 마모루 | 위상 시프트 마스크 블랭크 및 그 제조 방법 |
| KR0147493B1 (ko) * | 1995-10-25 | 1998-08-01 | 김주용 | 하프톤 위상반전마스크 제조방법 |
| US5618643A (en) * | 1995-12-15 | 1997-04-08 | Intel Corporation | Embedded phase shifting mask with improved relative attenuated film transmission |
| US5942356A (en) | 1996-03-30 | 1999-08-24 | Hoya Corporation | Phase shift mask and phase shift mask blank |
| US5897976A (en) * | 1996-05-20 | 1999-04-27 | E. I. Du Pont De Nemours And Company | Attenuating embedded phase shift photomask blanks |
| US5897977A (en) * | 1996-05-20 | 1999-04-27 | E. I. Du Pont De Nemours And Company | Attenuating embedded phase shift photomask blanks |
| TW354392B (en) * | 1996-07-03 | 1999-03-11 | Du Pont | Photomask blanks |
| US5981109A (en) * | 1996-07-17 | 1999-11-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Using (LaNiO3) X (TiO2) 1-X and (LaNiO3) X (Ta2 O5) 1-X oxide absorption composites for attenuating phase shifting blanks and masks |
| US5714285A (en) * | 1996-07-17 | 1998-02-03 | Taiwan Semiconductor Manufacturing Company, Ltd | Using (LaNiO3)X (TiO2)1-x oxide absorption composite for attenuating phase shifting blanks and masks |
| US6174631B1 (en) | 1997-02-10 | 2001-01-16 | E. I. Du Pont De Nemours And Company | Attenuating phase shift photomasks |
| US6782716B2 (en) * | 1999-02-12 | 2004-08-31 | Corning Incorporated | Vacuum ultraviolet transmitting silicon oxyfluoride lithography glass |
| US6265115B1 (en) | 1999-03-15 | 2001-07-24 | Corning Incorporated | Projection lithography photomask blanks, preforms and methods of making |
| US6242136B1 (en) | 1999-02-12 | 2001-06-05 | Corning Incorporated | Vacuum ultraviolet transmitting silicon oxyfluoride lithography glass |
| US6319634B1 (en) * | 1999-03-12 | 2001-11-20 | Corning Incorporated | Projection lithography photomasks and methods of making |
| US6682859B2 (en) * | 1999-02-12 | 2004-01-27 | Corning Incorporated | Vacuum ultraviolet trasmitting silicon oxyfluoride lithography glass |
| US6783898B2 (en) | 1999-02-12 | 2004-08-31 | Corning Incorporated | Projection lithography photomask blanks, preforms and method of making |
| JP2001033938A (ja) * | 1999-07-22 | 2001-02-09 | Oki Electric Ind Co Ltd | ハーフトーン位相シフトマスクの特性補正方法 |
| US6291113B1 (en) | 1999-10-21 | 2001-09-18 | Advanced Micro Devices, Inc. | Sidelobe suppressing phase shift mask and method |
| US6410192B1 (en) | 1999-11-15 | 2002-06-25 | Corning Incorporated | Photolithography method, photolithography mask blanks, and method of making |
| TW480367B (en) * | 2000-02-16 | 2002-03-21 | Shinetsu Chemical Co | Photomask blank, photomask and method of manufacture |
| US6379014B1 (en) * | 2000-04-27 | 2002-04-30 | N & K Technology, Inc. | Graded anti-reflective coatings for photolithography |
| JP3932805B2 (ja) * | 2000-12-25 | 2007-06-20 | 株式会社日立製作所 | フォトマスク及びそれを用いた電子デバイスの製造方法 |
| JP2002244274A (ja) * | 2001-02-13 | 2002-08-30 | Shin Etsu Chem Co Ltd | フォトマスクブランク、フォトマスク及びこれらの製造方法 |
| US6653027B2 (en) | 2001-02-26 | 2003-11-25 | International Business Machines Corporation | Attenuated embedded phase shift photomask blanks |
| US7166392B2 (en) | 2002-03-01 | 2007-01-23 | Hoya Corporation | Halftone type phase shift mask blank and halftone type phase shift mask |
| JP2003322954A (ja) * | 2002-03-01 | 2003-11-14 | Hoya Corp | ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク |
| JP2003322947A (ja) * | 2002-04-26 | 2003-11-14 | Hoya Corp | ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク |
| US6855463B2 (en) * | 2002-08-27 | 2005-02-15 | Photronics, Inc. | Photomask having an intermediate inspection film layer |
| JP2004145065A (ja) * | 2002-10-25 | 2004-05-20 | Toppan Printing Co Ltd | ハーフトーン型位相シフトマスク用ブランク及びその位相シフトマスク及びそのマスクを用いた半導体装置の製造方法 |
| KR100779956B1 (ko) * | 2002-12-03 | 2007-11-28 | 호야 가부시키가이샤 | 포토마스크 블랭크 및 포토마스크 제조방법 |
| US6859311B2 (en) * | 2003-03-24 | 2005-02-22 | Memphis Eye & Cataract Associates Ambulatory Surgery Center | Digital micromirror device having a window transparent to ultraviolet (UV) light |
| TWI375114B (en) * | 2004-10-22 | 2012-10-21 | Shinetsu Chemical Co | Photomask-blank, photomask and fabrication method thereof |
| DE102009046878A1 (de) * | 2009-07-31 | 2011-02-03 | Advanced Mask Technology Center Gmbh & Co. Kg | Verringerung der lonenwanderung von Absorbermaterialien von Lithographiemasken durch Chrompassivierung |
| JP5313401B2 (ja) * | 2010-04-09 | 2013-10-09 | Ｈｏｙａ株式会社 | 位相シフトマスクブランク及びその製造方法、並びに位相シフトマスク |
| JP6198238B2 (ja) * | 2013-04-17 | 2017-09-20 | アルバック成膜株式会社 | 位相シフトマスクの製造方法 |
| KR102145934B1 (ko) * | 2014-05-20 | 2020-08-19 | 동우 화인켐 주식회사 | 광경화 패턴의 형성 방법 |
| JP6341166B2 (ja) * | 2015-09-03 | 2018-06-13 | 信越化学工業株式会社 | フォトマスクブランク |
| JP6812236B2 (ja) * | 2016-12-27 | 2021-01-13 | Hoya株式会社 | 位相シフトマスクブランク及びこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法 |
| JP6999460B2 (ja) * | 2018-03-23 | 2022-01-18 | Hoya株式会社 | 位相シフトマスクブランク、位相シフトマスク中間体及びこれらを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法 |
| JP7255512B2 (ja) * | 2019-03-29 | 2023-04-11 | 信越化学工業株式会社 | 位相シフトマスクブランク及び位相シフトマスク |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DD126361A1 (enExample) * | 1976-04-30 | 1977-07-13 | ||
| JPS57121226A (en) * | 1981-01-21 | 1982-07-28 | Hitachi Ltd | Photo mask |
| JPS61272746A (ja) * | 1985-05-28 | 1986-12-03 | Asahi Glass Co Ltd | フオトマスクブランクおよびフオトマスク |
| US4890309A (en) * | 1987-02-25 | 1989-12-26 | Massachusetts Institute Of Technology | Lithography mask with a π-phase shifting attenuator |
| JP2765016B2 (ja) * | 1989-03-15 | 1998-06-11 | 凸版印刷株式会社 | フオトマスクブランクおよびフオトマスク |
| JPH04125643A (ja) * | 1990-09-18 | 1992-04-27 | Toppan Printing Co Ltd | フォトマスクおよびフォトマスクブランク |
| US5230971A (en) * | 1991-08-08 | 1993-07-27 | E. I. Du Pont De Nemours And Company | Photomask blank and process for making a photomask blank using gradual compositional transition between strata |
| US5187726A (en) * | 1991-09-30 | 1993-02-16 | Wisconsin Alumni Research Foundation | High resolution X-ray lithography using phase shift masks |
| JP3160332B2 (ja) * | 1991-11-01 | 2001-04-25 | 大日本印刷株式会社 | ハーフトーン位相シフトフォトマスク |
| TW505829B (en) * | 1992-11-16 | 2002-10-11 | Dupont Photomasks Inc | A transmissive embedded phase shifter-photomask blank |
-
1994
- 1994-02-14 US US08/195,670 patent/US5415953A/en not_active Expired - Lifetime
-
1995
- 1995-01-06 TW TW084100067A patent/TW316856B/zh active
- 1995-02-10 WO PCT/US1995/001393 patent/WO1995022083A2/en not_active Ceased
- 1995-02-10 CN CN95191612A patent/CN1122876C/zh not_active Expired - Fee Related
- 1995-02-10 KR KR1019960704398A patent/KR100362126B1/ko not_active Expired - Fee Related
- 1995-02-10 EP EP95908787A patent/EP0745235B1/en not_active Expired - Lifetime
- 1995-02-10 JP JP52126395A patent/JP3595860B2/ja not_active Expired - Fee Related
- 1995-02-10 DE DE69509502T patent/DE69509502T2/de not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US5415953A (en) | 1995-05-16 |
| CN1145124A (zh) | 1997-03-12 |
| WO1995022083A3 (en) | 1995-10-19 |
| JP3595860B2 (ja) | 2004-12-02 |
| EP0745235A1 (en) | 1996-12-04 |
| KR100362126B1 (ko) | 2003-04-10 |
| DE69509502D1 (de) | 1999-06-10 |
| DE69509502T2 (de) | 1999-09-02 |
| EP0745235B1 (en) | 1999-05-06 |
| CN1122876C (zh) | 2003-10-01 |
| KR970701379A (ko) | 1997-03-17 |
| JPH09508981A (ja) | 1997-09-09 |
| WO1995022083A2 (en) | 1995-08-17 |
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