CN1122876C - 光掩模坯料 - Google Patents

光掩模坯料 Download PDF

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Publication number
CN1122876C
CN1122876C CN95191612A CN95191612A CN1122876C CN 1122876 C CN1122876 C CN 1122876C CN 95191612 A CN95191612 A CN 95191612A CN 95191612 A CN95191612 A CN 95191612A CN 1122876 C CN1122876 C CN 1122876C
Authority
CN
China
Prior art keywords
film
photomask blank
wavelength
phase shifter
eps
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN95191612A
Other languages
English (en)
Chinese (zh)
Other versions
CN1145124A (zh
Inventor
H·U·阿尔培
R·H·弗伦奇
F·D·卡尔克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SCHOTT STONESLABE PRINTING TECHNOLOGIES AG
Original Assignee
EI Du Pont de Nemours and Co
DuPont Photomasks Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co, DuPont Photomasks Inc filed Critical EI Du Pont de Nemours and Co
Publication of CN1145124A publication Critical patent/CN1145124A/zh
Application granted granted Critical
Publication of CN1122876C publication Critical patent/CN1122876C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Lasers (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN95191612A 1994-02-14 1995-02-10 光掩模坯料 Expired - Fee Related CN1122876C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/195,670 1994-02-14
US08/195,670 US5415953A (en) 1994-02-14 1994-02-14 Photomask blanks comprising transmissive embedded phase shifter

Publications (2)

Publication Number Publication Date
CN1145124A CN1145124A (zh) 1997-03-12
CN1122876C true CN1122876C (zh) 2003-10-01

Family

ID=22722290

Family Applications (1)

Application Number Title Priority Date Filing Date
CN95191612A Expired - Fee Related CN1122876C (zh) 1994-02-14 1995-02-10 光掩模坯料

Country Status (8)

Country Link
US (1) US5415953A (enExample)
EP (1) EP0745235B1 (enExample)
JP (1) JP3595860B2 (enExample)
KR (1) KR100362126B1 (enExample)
CN (1) CN1122876C (enExample)
DE (1) DE69509502T2 (enExample)
TW (1) TW316856B (enExample)
WO (1) WO1995022083A2 (enExample)

Families Citing this family (41)

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JP3440346B2 (ja) * 1994-12-22 2003-08-25 大日本印刷株式会社 ブラックマトリックス用クロムブランクスおよび液晶デイスプレイ用カラーフイルター
KR100225661B1 (ko) * 1995-07-19 1999-10-15 야마나까 마모루 위상 시프트 마스크 블랭크 및 그 제조 방법
KR0147493B1 (ko) * 1995-10-25 1998-08-01 김주용 하프톤 위상반전마스크 제조방법
US5618643A (en) * 1995-12-15 1997-04-08 Intel Corporation Embedded phase shifting mask with improved relative attenuated film transmission
US5942356A (en) 1996-03-30 1999-08-24 Hoya Corporation Phase shift mask and phase shift mask blank
US5897976A (en) * 1996-05-20 1999-04-27 E. I. Du Pont De Nemours And Company Attenuating embedded phase shift photomask blanks
US5897977A (en) * 1996-05-20 1999-04-27 E. I. Du Pont De Nemours And Company Attenuating embedded phase shift photomask blanks
TW354392B (en) * 1996-07-03 1999-03-11 Du Pont Photomask blanks
US5981109A (en) * 1996-07-17 1999-11-09 Taiwan Semiconductor Manufacturing Company, Ltd. Using (LaNiO3) X (TiO2) 1-X and (LaNiO3) X (Ta2 O5) 1-X oxide absorption composites for attenuating phase shifting blanks and masks
US5714285A (en) * 1996-07-17 1998-02-03 Taiwan Semiconductor Manufacturing Company, Ltd Using (LaNiO3)X (TiO2)1-x oxide absorption composite for attenuating phase shifting blanks and masks
US6174631B1 (en) 1997-02-10 2001-01-16 E. I. Du Pont De Nemours And Company Attenuating phase shift photomasks
US6782716B2 (en) * 1999-02-12 2004-08-31 Corning Incorporated Vacuum ultraviolet transmitting silicon oxyfluoride lithography glass
US6265115B1 (en) 1999-03-15 2001-07-24 Corning Incorporated Projection lithography photomask blanks, preforms and methods of making
US6242136B1 (en) 1999-02-12 2001-06-05 Corning Incorporated Vacuum ultraviolet transmitting silicon oxyfluoride lithography glass
US6319634B1 (en) * 1999-03-12 2001-11-20 Corning Incorporated Projection lithography photomasks and methods of making
US6682859B2 (en) * 1999-02-12 2004-01-27 Corning Incorporated Vacuum ultraviolet trasmitting silicon oxyfluoride lithography glass
US6783898B2 (en) 1999-02-12 2004-08-31 Corning Incorporated Projection lithography photomask blanks, preforms and method of making
JP2001033938A (ja) * 1999-07-22 2001-02-09 Oki Electric Ind Co Ltd ハーフトーン位相シフトマスクの特性補正方法
US6291113B1 (en) 1999-10-21 2001-09-18 Advanced Micro Devices, Inc. Sidelobe suppressing phase shift mask and method
US6410192B1 (en) 1999-11-15 2002-06-25 Corning Incorporated Photolithography method, photolithography mask blanks, and method of making
TW480367B (en) * 2000-02-16 2002-03-21 Shinetsu Chemical Co Photomask blank, photomask and method of manufacture
US6379014B1 (en) * 2000-04-27 2002-04-30 N & K Technology, Inc. Graded anti-reflective coatings for photolithography
JP3932805B2 (ja) * 2000-12-25 2007-06-20 株式会社日立製作所 フォトマスク及びそれを用いた電子デバイスの製造方法
JP2002244274A (ja) * 2001-02-13 2002-08-30 Shin Etsu Chem Co Ltd フォトマスクブランク、フォトマスク及びこれらの製造方法
US6653027B2 (en) 2001-02-26 2003-11-25 International Business Machines Corporation Attenuated embedded phase shift photomask blanks
US7166392B2 (en) 2002-03-01 2007-01-23 Hoya Corporation Halftone type phase shift mask blank and halftone type phase shift mask
JP2003322954A (ja) * 2002-03-01 2003-11-14 Hoya Corp ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
JP2003322947A (ja) * 2002-04-26 2003-11-14 Hoya Corp ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
US6855463B2 (en) * 2002-08-27 2005-02-15 Photronics, Inc. Photomask having an intermediate inspection film layer
JP2004145065A (ja) * 2002-10-25 2004-05-20 Toppan Printing Co Ltd ハーフトーン型位相シフトマスク用ブランク及びその位相シフトマスク及びそのマスクを用いた半導体装置の製造方法
KR100779956B1 (ko) * 2002-12-03 2007-11-28 호야 가부시키가이샤 포토마스크 블랭크 및 포토마스크 제조방법
US6859311B2 (en) * 2003-03-24 2005-02-22 Memphis Eye & Cataract Associates Ambulatory Surgery Center Digital micromirror device having a window transparent to ultraviolet (UV) light
TWI375114B (en) * 2004-10-22 2012-10-21 Shinetsu Chemical Co Photomask-blank, photomask and fabrication method thereof
DE102009046878A1 (de) * 2009-07-31 2011-02-03 Advanced Mask Technology Center Gmbh & Co. Kg Verringerung der lonenwanderung von Absorbermaterialien von Lithographiemasken durch Chrompassivierung
JP5313401B2 (ja) * 2010-04-09 2013-10-09 Ｈｏｙａ株式会社 位相シフトマスクブランク及びその製造方法、並びに位相シフトマスク
JP6198238B2 (ja) * 2013-04-17 2017-09-20 アルバック成膜株式会社 位相シフトマスクの製造方法
KR102145934B1 (ko) * 2014-05-20 2020-08-19 동우 화인켐 주식회사 광경화 패턴의 형성 방법
JP6341166B2 (ja) * 2015-09-03 2018-06-13 信越化学工業株式会社 フォトマスクブランク
JP6812236B2 (ja) * 2016-12-27 2021-01-13 Hoya株式会社 位相シフトマスクブランク及びこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法
JP6999460B2 (ja) * 2018-03-23 2022-01-18 Hoya株式会社 位相シフトマスクブランク、位相シフトマスク中間体及びこれらを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法
JP7255512B2 (ja) * 2019-03-29 2023-04-11 信越化学工業株式会社 位相シフトマスクブランク及び位相シフトマスク

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD126361A1 (enExample) * 1976-04-30 1977-07-13
JPS57121226A (en) * 1981-01-21 1982-07-28 Hitachi Ltd Photo mask
JPS61272746A (ja) * 1985-05-28 1986-12-03 Asahi Glass Co Ltd フオトマスクブランクおよびフオトマスク
US4890309A (en) * 1987-02-25 1989-12-26 Massachusetts Institute Of Technology Lithography mask with a π-phase shifting attenuator
JP2765016B2 (ja) * 1989-03-15 1998-06-11 凸版印刷株式会社 フオトマスクブランクおよびフオトマスク
JPH04125643A (ja) * 1990-09-18 1992-04-27 Toppan Printing Co Ltd フォトマスクおよびフォトマスクブランク
US5230971A (en) * 1991-08-08 1993-07-27 E. I. Du Pont De Nemours And Company Photomask blank and process for making a photomask blank using gradual compositional transition between strata
US5187726A (en) * 1991-09-30 1993-02-16 Wisconsin Alumni Research Foundation High resolution X-ray lithography using phase shift masks
JP3160332B2 (ja) * 1991-11-01 2001-04-25 大日本印刷株式会社 ハーフトーン位相シフトフォトマスク
TW505829B (en) * 1992-11-16 2002-10-11 Dupont Photomasks Inc A transmissive embedded phase shifter-photomask blank

Also Published As

Publication number Publication date
US5415953A (en) 1995-05-16
CN1145124A (zh) 1997-03-12
WO1995022083A3 (en) 1995-10-19
JP3595860B2 (ja) 2004-12-02
EP0745235A1 (en) 1996-12-04
KR100362126B1 (ko) 2003-04-10
DE69509502D1 (de) 1999-06-10
DE69509502T2 (de) 1999-09-02
TW316856B (enExample) 1997-10-01
EP0745235B1 (en) 1999-05-06
KR970701379A (ko) 1997-03-17
JPH09508981A (ja) 1997-09-09
WO1995022083A2 (en) 1995-08-17

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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C53 Correction of patent of invention or patent application
CB03 Change of inventor or designer information

Inventor after: Dupont Photomasks Inc.

Inventor before: E. I. du Pont de Nemours and Co.

COR Change of bibliographic data

Free format text: CORRECT: INVENTOR; FROM: E. I. DU PONT DE NEMOURS AND CO. TO: DUPONT PHOTOMASKS INC.

CP02 Change in the address of a patent holder

Address after: Texas, USA

Address before: Delaware, USA

C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: XIAOTE LITHOGRAPHIC PRINTING TECHNOLOGY STOCK CO.

Free format text: FORMER OWNER: DUPONT PHOTOMASKS INC.

Effective date: 20031010

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20031010

Address after: Jena, Federal Republic of Germany

Patentee after: Schott Stoneslabe Printing Technologies AG

Address before: Texas, USA

Patentee before: Dupont Photomasks Inc.

C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20031001

Termination date: 20100210