JP3595860B2 - フォトマスクブランク - Google Patents

フォトマスクブランク Download PDF

Info

Publication number
JP3595860B2
JP3595860B2 JP52126395A JP52126395A JP3595860B2 JP 3595860 B2 JP3595860 B2 JP 3595860B2 JP 52126395 A JP52126395 A JP 52126395A JP 52126395 A JP52126395 A JP 52126395A JP 3595860 B2 JP3595860 B2 JP 3595860B2
Authority
JP
Japan
Prior art keywords
film
photomask blank
phase shifter
wavelength
distribution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP52126395A
Other languages
English (en)
Japanese (ja)
Other versions
JPH09508981A (ja
Inventor
ハツキ・ウフク アルペイ，
ロジャー・ハークエイル フレンチ，
フランクリン・デイーン カルク，
Original Assignee
シヨツト・リソテク・アクチエンゲゼルシヤフト
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by シヨツト・リソテク・アクチエンゲゼルシヤフト filed Critical シヨツト・リソテク・アクチエンゲゼルシヤフト
Publication of JPH09508981A publication Critical patent/JPH09508981A/ja
Application granted granted Critical
Publication of JP3595860B2 publication Critical patent/JP3595860B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Lasers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
JP52126395A 1994-02-14 1995-02-10 フォトマスクブランク Expired - Fee Related JP3595860B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/195,670 US5415953A (en) 1994-02-14 1994-02-14 Photomask blanks comprising transmissive embedded phase shifter
US08/195,670 1994-02-14
PCT/US1995/001393 WO1995022083A2 (en) 1994-02-14 1995-02-10 Photomask blanks

Publications (2)

Publication Number Publication Date
JPH09508981A JPH09508981A (ja) 1997-09-09
JP3595860B2 true JP3595860B2 (ja) 2004-12-02

Family

ID=22722290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52126395A Expired - Fee Related JP3595860B2 (ja) 1994-02-14 1995-02-10 フォトマスクブランク

Country Status (8)

Country Link
US (1) US5415953A (enExample)
EP (1) EP0745235B1 (enExample)
JP (1) JP3595860B2 (enExample)
KR (1) KR100362126B1 (enExample)
CN (1) CN1122876C (enExample)
DE (1) DE69509502T2 (enExample)
TW (1) TW316856B (enExample)
WO (1) WO1995022083A2 (enExample)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3440346B2 (ja) * 1994-12-22 2003-08-25 大日本印刷株式会社 ブラックマトリックス用クロムブランクスおよび液晶デイスプレイ用カラーフイルター
DE69523165T2 (de) * 1995-07-19 2002-05-29 Hoya Corp., Tokio/Tokyo Phasenschiebermasken-rohling und verfahren zu seiner herstellung
KR0147493B1 (ko) * 1995-10-25 1998-08-01 김주용 하프톤 위상반전마스크 제조방법
US5618643A (en) * 1995-12-15 1997-04-08 Intel Corporation Embedded phase shifting mask with improved relative attenuated film transmission
US5942356A (en) 1996-03-30 1999-08-24 Hoya Corporation Phase shift mask and phase shift mask blank
US5897977A (en) * 1996-05-20 1999-04-27 E. I. Du Pont De Nemours And Company Attenuating embedded phase shift photomask blanks
US5897976A (en) * 1996-05-20 1999-04-27 E. I. Du Pont De Nemours And Company Attenuating embedded phase shift photomask blanks
TW354392B (en) * 1996-07-03 1999-03-11 Du Pont Photomask blanks
US5714285A (en) * 1996-07-17 1998-02-03 Taiwan Semiconductor Manufacturing Company, Ltd Using (LaNiO3)X (TiO2)1-x oxide absorption composite for attenuating phase shifting blanks and masks
US5981109A (en) * 1996-07-17 1999-11-09 Taiwan Semiconductor Manufacturing Company, Ltd. Using (LaNiO3) X (TiO2) 1-X and (LaNiO3) X (Ta2 O5) 1-X oxide absorption composites for attenuating phase shifting blanks and masks
US6174631B1 (en) 1997-02-10 2001-01-16 E. I. Du Pont De Nemours And Company Attenuating phase shift photomasks
US6319634B1 (en) 1999-03-12 2001-11-20 Corning Incorporated Projection lithography photomasks and methods of making
US6682859B2 (en) * 1999-02-12 2004-01-27 Corning Incorporated Vacuum ultraviolet trasmitting silicon oxyfluoride lithography glass
US6782716B2 (en) * 1999-02-12 2004-08-31 Corning Incorporated Vacuum ultraviolet transmitting silicon oxyfluoride lithography glass
US6242136B1 (en) 1999-02-12 2001-06-05 Corning Incorporated Vacuum ultraviolet transmitting silicon oxyfluoride lithography glass
US6783898B2 (en) 1999-02-12 2004-08-31 Corning Incorporated Projection lithography photomask blanks, preforms and method of making
US6265115B1 (en) 1999-03-15 2001-07-24 Corning Incorporated Projection lithography photomask blanks, preforms and methods of making
JP2001033938A (ja) * 1999-07-22 2001-02-09 Oki Electric Ind Co Ltd ハーフトーン位相シフトマスクの特性補正方法
US6291113B1 (en) 1999-10-21 2001-09-18 Advanced Micro Devices, Inc. Sidelobe suppressing phase shift mask and method
US6410192B1 (en) 1999-11-15 2002-06-25 Corning Incorporated Photolithography method, photolithography mask blanks, and method of making
TW480367B (en) * 2000-02-16 2002-03-21 Shinetsu Chemical Co Photomask blank, photomask and method of manufacture
US6379014B1 (en) * 2000-04-27 2002-04-30 N & K Technology, Inc. Graded anti-reflective coatings for photolithography
JP3932805B2 (ja) * 2000-12-25 2007-06-20 株式会社日立製作所 フォトマスク及びそれを用いた電子デバイスの製造方法
JP2002244274A (ja) * 2001-02-13 2002-08-30 Shin Etsu Chem Co Ltd フォトマスクブランク、フォトマスク及びこれらの製造方法
US6653027B2 (en) 2001-02-26 2003-11-25 International Business Machines Corporation Attenuated embedded phase shift photomask blanks
JP2003322954A (ja) * 2002-03-01 2003-11-14 Hoya Corp ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
US7166392B2 (en) 2002-03-01 2007-01-23 Hoya Corporation Halftone type phase shift mask blank and halftone type phase shift mask
JP2003322947A (ja) * 2002-04-26 2003-11-14 Hoya Corp ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
US6855463B2 (en) * 2002-08-27 2005-02-15 Photronics, Inc. Photomask having an intermediate inspection film layer
JP2004145065A (ja) * 2002-10-25 2004-05-20 Toppan Printing Co Ltd ハーフトーン型位相シフトマスク用ブランク及びその位相シフトマスク及びそのマスクを用いた半導体装置の製造方法
JPWO2004051369A1 (ja) * 2002-12-03 2006-04-06 Hoya株式会社 フォトマスクブランク、及びフォトマスク
US6859311B2 (en) * 2003-03-24 2005-02-22 Memphis Eye & Cataract Associates Ambulatory Surgery Center Digital micromirror device having a window transparent to ultraviolet (UV) light
TWI375114B (en) * 2004-10-22 2012-10-21 Shinetsu Chemical Co Photomask-blank, photomask and fabrication method thereof
DE102009046878A1 (de) * 2009-07-31 2011-02-03 Advanced Mask Technology Center Gmbh & Co. Kg Verringerung der lonenwanderung von Absorbermaterialien von Lithographiemasken durch Chrompassivierung
TWI588593B (zh) * 2010-04-09 2017-06-21 Hoya Corp Phase shift mask substrate and method of making same, and phase shift mask
JP6198238B2 (ja) * 2013-04-17 2017-09-20 アルバック成膜株式会社 位相シフトマスクの製造方法
KR102145934B1 (ko) * 2014-05-20 2020-08-19 동우 화인켐 주식회사 광경화 패턴의 형성 방법
JP6341166B2 (ja) * 2015-09-03 2018-06-13 信越化学工業株式会社 フォトマスクブランク
JP6812236B2 (ja) * 2016-12-27 2021-01-13 Hoya株式会社 位相シフトマスクブランク及びこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法
JP6999460B2 (ja) * 2018-03-23 2022-01-18 Hoya株式会社 位相シフトマスクブランク、位相シフトマスク中間体及びこれらを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法
JP7255512B2 (ja) * 2019-03-29 2023-04-11 信越化学工業株式会社 位相シフトマスクブランク及び位相シフトマスク

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD126361A1 (enExample) * 1976-04-30 1977-07-13
JPS57121226A (en) * 1981-01-21 1982-07-28 Hitachi Ltd Photo mask
JPS61272746A (ja) * 1985-05-28 1986-12-03 Asahi Glass Co Ltd フオトマスクブランクおよびフオトマスク
US4890309A (en) * 1987-02-25 1989-12-26 Massachusetts Institute Of Technology Lithography mask with a π-phase shifting attenuator
JP2765016B2 (ja) * 1989-03-15 1998-06-11 凸版印刷株式会社 フオトマスクブランクおよびフオトマスク
JPH04125643A (ja) * 1990-09-18 1992-04-27 Toppan Printing Co Ltd フォトマスクおよびフォトマスクブランク
US5230971A (en) * 1991-08-08 1993-07-27 E. I. Du Pont De Nemours And Company Photomask blank and process for making a photomask blank using gradual compositional transition between strata
US5187726A (en) * 1991-09-30 1993-02-16 Wisconsin Alumni Research Foundation High resolution X-ray lithography using phase shift masks
JP3160332B2 (ja) * 1991-11-01 2001-04-25 大日本印刷株式会社 ハーフトーン位相シフトフォトマスク
TW505829B (en) * 1992-11-16 2002-10-11 Dupont Photomasks Inc A transmissive embedded phase shifter-photomask blank

Also Published As

Publication number Publication date
TW316856B (enExample) 1997-10-01
DE69509502D1 (de) 1999-06-10
CN1145124A (zh) 1997-03-12
KR970701379A (ko) 1997-03-17
EP0745235B1 (en) 1999-05-06
WO1995022083A3 (en) 1995-10-19
KR100362126B1 (ko) 2003-04-10
DE69509502T2 (de) 1999-09-02
EP0745235A1 (en) 1996-12-04
US5415953A (en) 1995-05-16
WO1995022083A2 (en) 1995-08-17
JPH09508981A (ja) 1997-09-09
CN1122876C (zh) 2003-10-01

Similar Documents

Publication Publication Date Title
JP3595860B2 (ja) フォトマスクブランク
KR101688774B1 (ko) 위상 시프트 마스크 블랭크, 위상 시프트 마스크 및 위상 시프트 마스크 블랭크의 제조 방법
KR102003650B1 (ko) 위상 시프트 마스크 블랭크 및 이것을 사용한 위상 시프트 마스크의 제조 방법, 및 표시 장치의 제조 방법
KR100213151B1 (ko) 감쇠하는 상 이동 마스크의 제조를 위한 박막의 물질
TWI480678B (zh) 光罩空白基板、光罩及其製造方法
KR101004395B1 (ko) 포토마스크 블랭크 및 포토마스크
EP0670054B1 (en) Photomask blanks
KR20180076296A (ko) 위상 시프트 마스크 블랭크 및 이것을 사용한 위상 시프트 마스크의 제조 방법, 및 표시 장치의 제조 방법
KR20190041461A (ko) 마스크 블랭크, 위상 시프트 마스크, 위상 시프트 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
WO2000020928A9 (en) Photomask for projection lithography at or below about 160 nm and a method
Han et al. Novel design of att-PSM structure for extreme-ultraviolet lithography and enhancement of image contrast during inspection
JP4784983B2 (ja) ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
CN108319104B (zh) 显示装置制造用相移掩模坯料、显示装置制造用相移掩模的制造方法及显示装置的制造方法
KR102663167B1 (ko) 금속-반도체 화합물로 구성된 ArF 위상반전 블랭크 마스크용 차광막
Lai et al. The optical properties of monolayer amorphous Al2O3–TiO2 composite films used as HT-APSM blanks for ArF immersion lithography
KR20240100256A (ko) 마스크 블랭크, 전사용 마스크, 전사용 마스크의 제조 방법 및 표시 장치의 제조 방법
Smith et al. Relation between Local Composition, Chemical Environment and Phase Shift Behavior in Cr-Based Oxycarbonitride Thin Films
JP2003005349A (ja) ハーフトーン型位相シフトマスク用ブランクおよびハーフトーン型位相シフトマスク
Kanayama et al. ZrSiON as a material for high-transmittance attenuated PSM
JP2003084418A (ja) ハーフトーン型位相シフトマスクおよびブランク

Legal Events

Date Code Title Description
A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20040216

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040406

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20040727

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20040823

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20040812

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080917

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090917

Year of fee payment: 5

LAPS Cancellation because of no payment of annual fees