TW308736B - - Google Patents
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- Publication number
- TW308736B TW308736B TW085104321A TW85104321A TW308736B TW 308736 B TW308736 B TW 308736B TW 085104321 A TW085104321 A TW 085104321A TW 85104321 A TW85104321 A TW 85104321A TW 308736 B TW308736 B TW 308736B
- Authority
- TW
- Taiwan
- Prior art keywords
- conductive
- aforementioned
- insulating layer
- area
- connection hole
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0149—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/482—Bit lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/42—Vias, e.g. via plugs
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7064905A JPH08236622A (ja) | 1995-02-28 | 1995-02-28 | 半導体装置及びその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW308736B true TW308736B (https=) | 1997-06-21 |
Family
ID=13271550
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085104321A TW308736B (https=) | 1995-02-28 | 1996-04-12 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH08236622A (https=) |
| KR (1) | KR100474953B1 (https=) |
| TW (1) | TW308736B (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100578117B1 (ko) * | 1998-12-21 | 2006-09-27 | 삼성전자주식회사 | 반도체 장치의 배선 형성 방법 |
| KR100727449B1 (ko) * | 2000-09-25 | 2007-06-13 | 하이닉스 세미컨덕터 매뉴팩쳐링 아메리카 인코포레이티드 | 고도전성 게이트, 로컬 인터커넥트 또는 커패시터 노드를 갖는 집적 장치 |
| KR100868607B1 (ko) * | 2008-02-21 | 2008-11-13 | 가부시키가이샤 히타치세이사쿠쇼 | 반도체 장치 및 그 제조 방법 |
| KR101885766B1 (ko) * | 2016-05-10 | 2018-08-06 | 한국과학기술원 | 스트레인 센서 및 이의 제조방법 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4833096A (en) * | 1988-01-19 | 1989-05-23 | Atmel Corporation | EEPROM fabrication process |
| JP2892443B2 (ja) * | 1990-06-13 | 1999-05-17 | 沖電気工業株式会社 | 半導体装置の製造方法 |
| JP3123092B2 (ja) * | 1991-03-06 | 2001-01-09 | 日本電気株式会社 | 半導体装置の製造方法 |
| JPH05343401A (ja) * | 1992-06-12 | 1993-12-24 | Fujitsu Ltd | 半導体装置 |
| JPH06163711A (ja) * | 1992-11-20 | 1994-06-10 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
-
1995
- 1995-02-28 JP JP7064905A patent/JPH08236622A/ja active Pending
-
1996
- 1996-02-28 KR KR1019960005070A patent/KR100474953B1/ko not_active Expired - Fee Related
- 1996-04-12 TW TW085104321A patent/TW308736B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR100474953B1 (ko) | 2005-05-18 |
| KR960032687A (ko) | 1996-09-17 |
| JPH08236622A (ja) | 1996-09-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |