TW308711B - - Google Patents

Download PDF

Info

Publication number
TW308711B
TW308711B TW083110649A TW83110649A TW308711B TW 308711 B TW308711 B TW 308711B TW 083110649 A TW083110649 A TW 083110649A TW 83110649 A TW83110649 A TW 83110649A TW 308711 B TW308711 B TW 308711B
Authority
TW
Taiwan
Prior art keywords
layer
application
item
please
thickness
Prior art date
Application number
TW083110649A
Other languages
English (en)
Chinese (zh)
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Application granted granted Critical
Publication of TW308711B publication Critical patent/TW308711B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Drying Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
TW083110649A 1993-11-17 1994-11-16 TW308711B (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/153,681 US5419803A (en) 1993-11-17 1993-11-17 Method of planarizing microstructures

Publications (1)

Publication Number Publication Date
TW308711B true TW308711B (https=) 1997-06-21

Family

ID=22548270

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083110649A TW308711B (https=) 1993-11-17 1994-11-16

Country Status (6)

Country Link
US (1) US5419803A (https=)
EP (1) EP0654816A3 (https=)
JP (1) JPH07221082A (https=)
IL (1) IL111540A (https=)
NO (1) NO944384L (https=)
TW (1) TW308711B (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5665199A (en) * 1995-06-23 1997-09-09 Advanced Micro Devices, Inc. Methodology for developing product-specific interlayer dielectric polish processes
US6030887A (en) * 1998-02-26 2000-02-29 Memc Electronic Materials, Inc. Flattening process for epitaxial semiconductor wafers
US8779322B2 (en) 1997-06-26 2014-07-15 Mks Instruments Inc. Method and apparatus for processing metal bearing gases
US7569790B2 (en) * 1997-06-26 2009-08-04 Mks Instruments, Inc. Method and apparatus for processing metal bearing gases
US6388226B1 (en) 1997-06-26 2002-05-14 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6815633B1 (en) 1997-06-26 2004-11-09 Applied Science & Technology, Inc. Inductively-coupled toroidal plasma source
US7166816B1 (en) 1997-06-26 2007-01-23 Mks Instruments, Inc. Inductively-coupled torodial plasma source
US6150628A (en) 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6033921A (en) * 1998-04-06 2000-03-07 Advanced Micro Devices, Inc. Method for depositing a material of controlled, variable thickness across a surface for planarization of that surface
US6074947A (en) * 1998-07-10 2000-06-13 Plasma Sil, Llc Process for improving uniform thickness of semiconductor substrates using plasma assisted chemical etching
US6294469B1 (en) 1999-05-21 2001-09-25 Plasmasil, Llc Silicon wafering process flow
US6200908B1 (en) 1999-08-04 2001-03-13 Memc Electronic Materials, Inc. Process for reducing waviness in semiconductor wafers
US7510664B2 (en) 2001-01-30 2009-03-31 Rapt Industries, Inc. Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces
US7591957B2 (en) * 2001-01-30 2009-09-22 Rapt Industries, Inc. Method for atmospheric pressure reactive atom plasma processing for surface modification
US6660177B2 (en) 2001-11-07 2003-12-09 Rapt Industries Inc. Apparatus and method for reactive atom plasma processing for material deposition
US20080011332A1 (en) * 2002-04-26 2008-01-17 Accretech Usa, Inc. Method and apparatus for cleaning a wafer substrate
US20080017316A1 (en) * 2002-04-26 2008-01-24 Accretech Usa, Inc. Clean ignition system for wafer substrate processing
US20080190558A1 (en) * 2002-04-26 2008-08-14 Accretech Usa, Inc. Wafer processing apparatus and method
US7371992B2 (en) 2003-03-07 2008-05-13 Rapt Industries, Inc. Method for non-contact cleaning of a surface
US7304263B2 (en) * 2003-08-14 2007-12-04 Rapt Industries, Inc. Systems and methods utilizing an aperture with a reactive atom plasma torch
US7297892B2 (en) * 2003-08-14 2007-11-20 Rapt Industries, Inc. Systems and methods for laser-assisted plasma processing
KR100737379B1 (ko) * 2005-12-06 2007-07-09 한국전자통신연구원 반도체 기판의 평탄화 방법
DE102017216358A1 (de) 2017-09-14 2019-03-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur Bestimmung eines Polarisationszustandes einer elektromagnetischen Welle
CN116045826B (zh) * 2023-01-18 2025-12-05 苏州桐力光电股份有限公司 显示屏贴合胶层的厚度检测方法及显示屏贴合工艺

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56108264A (en) * 1980-01-31 1981-08-27 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device
US4680084A (en) * 1984-08-21 1987-07-14 American Telephone And Telegraph Company, At&T Bell Laboratories Interferometric methods and apparatus for device fabrication
JPS62120029A (ja) * 1985-11-20 1987-06-01 Sumitomo Electric Ind Ltd エツチバツク平坦化方法
FR2599892B1 (fr) * 1986-06-10 1988-08-26 Schiltz Andre Procede d'aplanissement d'un substrat semiconducteur revetu d'une couche dielectrique
JPH0834198B2 (ja) * 1990-11-28 1996-03-29 信越半導体株式会社 Ｓｏｉ基板における単結晶薄膜層の膜厚制御方法
JPH0645327A (ja) * 1991-01-09 1994-02-18 Nec Corp 半導体装置の製造方法
US5254830A (en) * 1991-05-07 1993-10-19 Hughes Aircraft Company System for removing material from semiconductor wafers using a contained plasma
US5240552A (en) * 1991-12-11 1993-08-31 Micron Technology, Inc. Chemical mechanical planarization (CMP) of a semiconductor wafer using acoustical waves for in-situ end point detection
US5291415A (en) * 1991-12-13 1994-03-01 Hughes Aircraft Company Method to determine tool paths for thinning and correcting errors in thickness profiles of films
KR940008372B1 (ko) * 1992-01-16 1994-09-12 삼성전자 주식회사 반도체 기판의 층간 절연막의 평탄화 방법
US5375064A (en) * 1993-12-02 1994-12-20 Hughes Aircraft Company Method and apparatus for moving a material removal tool with low tool accelerations

Also Published As

Publication number Publication date
NO944384D0 (no) 1994-11-16
IL111540A (en) 1996-10-31
EP0654816A3 (en) 1995-11-29
US5419803A (en) 1995-05-30
JPH07221082A (ja) 1995-08-18
NO944384L (no) 1995-05-18
IL111540A0 (en) 1995-01-24
EP0654816A2 (en) 1995-05-24

Similar Documents

Publication Publication Date Title
TW308711B (https=)
US5665905A (en) Calibration standard for 2-D and 3-D profilometry in the sub-nanometer range and method of producing it
US4551192A (en) Electrostatic or vacuum pinchuck formed with microcircuit lithography
US5920067A (en) Monocrystalline test and reference structures, and use for calibrating instruments
US6646737B2 (en) Submicron dimensional calibration standards and methods of manufacture and use
EP0514046A1 (en) System for controlling and executing the etching of a wafer
WO1999008065A1 (en) Calibration standard for microroughness measuring instruments
US7453571B1 (en) Dimensional calibration standards
US5684301A (en) Monocrystalline test structures, and use for calibrating instruments
JP2006235321A (ja) マスクブランク用透明基板の製造方法、マスクブランクの製造方法及び露光用マスクの製造方法
CN118248543A (zh) 用于制造半导体器件的方法
EP0968081A1 (en) Flattening process for bonded semiconductor substrates
CN100416821C (zh) 具有测量图案的半导体器件及其测量方法
Allen et al. High-resolution transmission electron microscopy calibration of critical dimension (CD) reference materials
TW294829B (https=)
EP0628809A1 (en) Calibration standard for 2-D and 3-D profilometry in the sub-nanometer range and method of producing it
TW573334B (en) Method for determining the endpoint of etch process steps
TW381320B (en) Method for improving the alignment of semiconductor processes
Hedlund et al. Method for the determination of the angular dependence during dry etching
CN108010863A (zh) 凹陷缺陷的检测方法以及用于检测凹陷缺陷的晶圆
Allen et al. Comparison of properties of electrical test structures patterned in BESOI and SIMOX films for CD reference-material applications
US6500725B1 (en) Microelectronic fabrication method providing alignment mark and isolation trench of identical depth
Thakur et al. Stress and Warpage Studies of Silicon Based Plain and Patterned Films During Rapid Thermal Processing (RTP)
TW563237B (en) Method of removing mask alignment mark material
Lukács et al. Makyoh-topography assessment of etch and polish removal of processed circuits for substrate re-use