TW290707B - - Google Patents

Info

Publication number
TW290707B
TW290707B TW084110337A TW84110337A TW290707B TW 290707 B TW290707 B TW 290707B TW 084110337 A TW084110337 A TW 084110337A TW 84110337 A TW84110337 A TW 84110337A TW 290707 B TW290707 B TW 290707B
Authority
TW
Taiwan
Application number
TW084110337A
Original Assignee
Tokyo Electron Co Ltd
Tel Kyushu Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Co Ltd, Tel Kyushu Kk filed Critical Tokyo Electron Co Ltd
Application granted granted Critical
Publication of TW290707B publication Critical patent/TW290707B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
TW084110337A 1994-09-29 1995-10-03 TW290707B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25915594 1994-09-29

Publications (1)

Publication Number Publication Date
TW290707B true TW290707B (zh) 1996-11-11

Family

ID=17330113

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084110337A TW290707B (zh) 1994-09-29 1995-10-03

Country Status (4)

Country Link
US (1) US5625433A (zh)
JP (2) JP3259092B2 (zh)
KR (1) KR100295019B1 (zh)
TW (1) TW290707B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6683007B1 (en) 1999-03-15 2004-01-27 Nec Corporation Etching and cleaning methods and etching and cleaning apparatus used therefor
US7781986B2 (en) 2008-02-01 2010-08-24 Fsp Technology Inc. Inverter with adjustable resonance gain

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JP3377909B2 (ja) * 1996-02-28 2003-02-17 大日本スクリーン製造株式会社 基板処理装置
US5821035A (en) * 1996-03-06 1998-10-13 Sony Corporation Resist developing apparatus and resist developing method
TW359854B (en) * 1996-06-21 1999-06-01 Tokyo Electron Ltd Processing apparatus and processing method
JP3227595B2 (ja) * 1996-08-20 2001-11-12 東京エレクトロン株式会社 現像処理方法及び現像処理装置
KR100283442B1 (ko) * 1996-12-26 2001-04-02 이시다 아키라 현상장치및현상방법
DE19718983B4 (de) * 1997-05-05 2004-09-30 Infineon Technologies Ag Vorrichtungen, Verwendung und Verfahren zum Aufbringen einer Substanz auf eine Oberfläche eines Halbleiterwafers
JP3265238B2 (ja) * 1997-08-01 2002-03-11 東京エレクトロン株式会社 液膜形成装置及びその方法
JP3340945B2 (ja) * 1997-08-06 2002-11-05 東京エレクトロン株式会社 塗布現像処理装置
KR100292612B1 (ko) * 1997-12-08 2001-08-07 윤종용 반도체 웨이퍼 정렬시스템 및 이를 이용하는 웨이퍼 정렬방법
JPH11204396A (ja) * 1998-01-08 1999-07-30 Canon Inc 半導体製造システムおよびデバイス製造方法
JP2002501298A (ja) * 1998-01-09 2002-01-15 エフエイスター、リミティド リニアディベロッパ
US6248171B1 (en) 1998-09-17 2001-06-19 Silicon Valley Group, Inc. Yield and line width performance for liquid polymers and other materials
US6689215B2 (en) 1998-09-17 2004-02-10 Asml Holdings, N.V. Method and apparatus for mitigating cross-contamination between liquid dispensing jets in close proximity to a surface
US6210050B1 (en) 1998-12-01 2001-04-03 Advanced Micro Devices, Inc. Resist developing method and apparatus with nozzle offset for uniform developer application
US6092937A (en) * 1999-01-08 2000-07-25 Fastar, Ltd. Linear developer
US6398429B1 (en) 1999-03-15 2002-06-04 Tokyo Electron Limited Developing method and developing apparatus
JP3393082B2 (ja) 1999-04-02 2003-04-07 東京エレクトロン株式会社 現像方法および現像装置
US6312171B1 (en) 1999-08-12 2001-11-06 Tokyo Electron Limited Developing apparatus and method thereof
JP3635217B2 (ja) * 1999-10-05 2005-04-06 東京エレクトロン株式会社 液処理装置及びその方法
US6248175B1 (en) 1999-10-29 2001-06-19 Advanced Micro Devices, Inc. Nozzle arm movement for resist development
US6270579B1 (en) 1999-10-29 2001-08-07 Advanced Micro Devices, Inc. Nozzle arm movement for resist development
US6533865B1 (en) 2000-03-08 2003-03-18 Advanced Micro Devices, Inc. Acoustic/ultrasonic agitation to reduce microbubbles in developer
JP3545676B2 (ja) 2000-05-10 2004-07-21 東京エレクトロン株式会社 現像処理装置及び現像処理方法
US6746826B1 (en) 2000-07-25 2004-06-08 Asml Holding N.V. Method for an improved developing process in wafer photolithography
KR100481537B1 (ko) * 2002-06-29 2005-04-08 동부아남반도체 주식회사 웨이퍼 현상 장치
US6770424B2 (en) * 2002-12-16 2004-08-03 Asml Holding N.V. Wafer track apparatus and methods for dispensing fluids with rotatable dispense arms
US20050051196A1 (en) * 2003-09-08 2005-03-10 Taiwan Semiconductor Manufacturing Co., Ltd., Developer dispensing apparatus with adjustable knife ring
US20060060232A1 (en) * 2004-04-15 2006-03-23 Tokyo Electron Limited Liquid treatment device and liquid treatment method
JP4464763B2 (ja) * 2004-08-20 2010-05-19 東京エレクトロン株式会社 現像装置及び現像方法
US7651306B2 (en) 2004-12-22 2010-01-26 Applied Materials, Inc. Cartesian robot cluster tool architecture
US7255747B2 (en) 2004-12-22 2007-08-14 Sokudo Co., Ltd. Coat/develop module with independent stations
US7819079B2 (en) 2004-12-22 2010-10-26 Applied Materials, Inc. Cartesian cluster tool configuration for lithography type processes
US7798764B2 (en) 2005-12-22 2010-09-21 Applied Materials, Inc. Substrate processing sequence in a cartesian robot cluster tool
US7699021B2 (en) 2004-12-22 2010-04-20 Sokudo Co., Ltd. Cluster tool substrate throughput optimization
JP5133855B2 (ja) * 2008-11-25 2013-01-30 株式会社ディスコ 保護膜の被覆方法
JP5314723B2 (ja) * 2011-03-03 2013-10-16 東京エレクトロン株式会社 現像装置
JP5764589B2 (ja) 2012-10-31 2015-08-19 富士フイルム株式会社 化学増幅型レジスト膜のパターニング用有機系処理液の収容容器、並びに、これらを使用したパターン形成方法及び電子デバイスの製造方法
US10203606B1 (en) * 2017-11-22 2019-02-12 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for dispensing developer onto semiconductor substrate
KR102186068B1 (ko) * 2018-12-21 2020-12-07 세메스 주식회사 기판 처리 방법 및 장치
JP7232737B2 (ja) * 2019-08-07 2023-03-03 東京エレクトロン株式会社 基板処理装置
US10998218B1 (en) * 2019-12-29 2021-05-04 Nanya Technology Corporation Wet cleaning apparatus and manufacturing method using the same

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US4564280A (en) * 1982-10-28 1986-01-14 Fujitsu Limited Method and apparatus for developing resist film including a movable nozzle arm
JP2855046B2 (ja) * 1993-03-31 1999-02-10 大日本スクリーン製造株式会社 回転式基板処理装置用の基板回転保持装置
JP2594332B2 (ja) * 1987-09-02 1997-03-26 富士電機株式会社 ダイスの誘導加熱装置
JPH0238441A (ja) * 1988-07-28 1990-02-07 Nippon Oil & Fats Co Ltd 熱可塑性樹脂組成物
JPH06103687B2 (ja) * 1988-08-12 1994-12-14 大日本スクリーン製造株式会社 回転式表面処理方法および回転式表面処理における処理終点検出方法、ならびに回転式表面処理装置
WO1991007518A2 (de) * 1989-11-17 1991-05-30 Glyco-Metall-Werke Daelen & Loos Gmbh Verfahren und vorrichtung zur herstellung eines schichtwerkstoffes für gleitelemente
US5159374A (en) * 1991-04-04 1992-10-27 Vlsi Technology, Inc. Water sealing develop ring

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6683007B1 (en) 1999-03-15 2004-01-27 Nec Corporation Etching and cleaning methods and etching and cleaning apparatus used therefor
US6964724B2 (en) 1999-03-15 2005-11-15 Nec Corporation Etching and cleaning methods and etching and cleaning apparatuses used therefor
US7862658B2 (en) 1999-03-15 2011-01-04 Renesas Electronics Corporation Etching and cleaning methods and etching and cleaning apparatuses used therefor
US8420549B2 (en) 1999-03-15 2013-04-16 Renesas Electronics Corporation Etching and cleaning methods and etching and cleaning apparatuses used therefor
US7781986B2 (en) 2008-02-01 2010-08-24 Fsp Technology Inc. Inverter with adjustable resonance gain

Also Published As

Publication number Publication date
JP2000208413A (ja) 2000-07-28
US5625433A (en) 1997-04-29
JP2000188255A (ja) 2000-07-04
JP3259091B2 (ja) 2002-02-18
JP3259092B2 (ja) 2002-02-18
KR960012298A (ko) 1996-04-20
KR100295019B1 (ko) 2001-10-24

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