TW289851B - - Google Patents

Info

Publication number
TW289851B
TW289851B TW084113365A TW84113365A TW289851B TW 289851 B TW289851 B TW 289851B TW 084113365 A TW084113365 A TW 084113365A TW 84113365 A TW84113365 A TW 84113365A TW 289851 B TW289851 B TW 289851B
Authority
TW
Taiwan
Application number
TW084113365A
Other languages
Chinese (zh)
Original Assignee
Toshiba Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP6295230A external-priority patent/JPH08153738A/ja
Priority claimed from JP29523394A external-priority patent/JP3272889B2/ja
Priority claimed from JP29523194A external-priority patent/JP3325410B2/ja
Application filed by Toshiba Co Ltd filed Critical Toshiba Co Ltd
Application granted granted Critical
Publication of TW289851B publication Critical patent/TW289851B/zh

Links

Classifications

    • H10W72/00—
    • H10W74/014—
    • H10W72/0113—
    • H10W72/30—
    • H10W74/012—
    • H10W74/15—
    • H10W72/0198—
    • H10W72/072—
    • H10W72/073—
    • H10W72/856—
    • H10W90/724—
    • H10W90/734—
TW084113365A 1994-11-29 1995-12-14 TW289851B (enExample)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP6295230A JPH08153738A (ja) 1994-11-29 1994-11-29 半導体装置の製造方法
JP29523394A JP3272889B2 (ja) 1994-11-29 1994-11-29 半導体装置の製造方法
JP29523194A JP3325410B2 (ja) 1994-11-29 1994-11-29 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW289851B true TW289851B (enExample) 1996-11-01

Family

ID=27337965

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084113365A TW289851B (enExample) 1994-11-29 1995-12-14

Country Status (4)

Country Link
US (1) US5677246A (enExample)
EP (1) EP0715348A3 (enExample)
KR (1) KR0184371B1 (enExample)
TW (1) TW289851B (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5766982A (en) * 1996-03-07 1998-06-16 Micron Technology, Inc. Method and apparatus for underfill of bumped or raised die
US6238223B1 (en) * 1997-08-20 2001-05-29 Micro Technology, Inc. Method of depositing a thermoplastic polymer in semiconductor fabrication
WO2000002245A1 (en) * 1998-07-01 2000-01-13 Seiko Epson Corporation Semiconductor device, method of manufacture thereof, circuit board, and electronic device
US6018192A (en) * 1998-07-30 2000-01-25 Motorola, Inc. Electronic device with a thermal control capability
US6288905B1 (en) * 1999-04-15 2001-09-11 Amerasia International Technology Inc. Contact module, as for a smart card, and method for making same
US6048656A (en) * 1999-05-11 2000-04-11 Micron Technology, Inc. Void-free underfill of surface mounted chips
KR100309161B1 (ko) 1999-10-11 2001-11-02 윤종용 메모리 카드 및 그 제조방법
US6400033B1 (en) 2000-06-01 2002-06-04 Amkor Technology, Inc. Reinforcing solder connections of electronic devices
JP3945968B2 (ja) * 2000-09-06 2007-07-18 三洋電機株式会社 半導体装置およびその製造方法
JP2002092575A (ja) * 2000-09-19 2002-03-29 Mitsubishi Electric Corp 小型カードとその製造方法
US8143108B2 (en) * 2004-10-07 2012-03-27 Stats Chippac, Ltd. Semiconductor device and method of dissipating heat from thin package-on-package mounted to substrate
US20040070080A1 (en) * 2001-02-27 2004-04-15 Chippac, Inc Low cost, high performance flip chip package structure
US20020121707A1 (en) * 2001-02-27 2002-09-05 Chippac, Inc. Super-thin high speed flip chip package
USRE44438E1 (en) 2001-02-27 2013-08-13 Stats Chippac, Ltd. Semiconductor device and method of dissipating heat from thin package-on-package mounted to substrate
JP4303609B2 (ja) * 2004-01-29 2009-07-29 富士通株式会社 スペーサ
JP4207004B2 (ja) 2005-01-12 2009-01-14 セイコーエプソン株式会社 半導体装置の製造方法
GB0505824D0 (en) * 2005-03-22 2005-04-27 Conductive Inkjet Tech Ltd Treatment of items
JP2007059693A (ja) * 2005-08-25 2007-03-08 Toshiba Corp 半導体メモリカードおよび半導体メモリカードの製造方法
US7381590B2 (en) * 2006-03-09 2008-06-03 International Business Machines Corporation Method and device including reworkable alpha particle barrier and corrosion barrier
JP2012049175A (ja) * 2010-08-24 2012-03-08 Toshiba Corp 半導体装置の製造方法
US8193036B2 (en) 2010-09-14 2012-06-05 Stats Chippac, Ltd. Semiconductor device and method of forming mold underfill using dispensing needle having same width as semiconductor die

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5850572A (ja) * 1981-09-22 1983-03-25 株式会社東芝 デイスプレイ装置の製造方法
JPS60262430A (ja) 1984-06-08 1985-12-25 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS643626A (en) * 1987-06-26 1989-01-09 Matsushita Electric Industrial Co Ltd Production of liquid crystal display device
JP2574369B2 (ja) * 1988-03-07 1997-01-22 松下電器産業株式会社 半導体チップの実装体およびその実装方法
JPH027180A (ja) * 1988-06-27 1990-01-11 Hitachi Ltd 命令一斉発火方式
JP2596615B2 (ja) * 1989-02-08 1997-04-02 沖電気工業株式会社 樹脂封止用回路基板
US5071787A (en) * 1989-03-14 1991-12-10 Kabushiki Kaisha Toshiba Semiconductor device utilizing a face-down bonding and a method for manufacturing the same
US5121190A (en) * 1990-03-14 1992-06-09 International Business Machines Corp. Solder interconnection structure on organic substrates
JPH04169002A (ja) * 1990-11-01 1992-06-17 Matsushita Electric Ind Co Ltd 導電性ペーストとそれを用いた多層セラミック配線基板の製造方法
JP2861368B2 (ja) * 1990-11-05 1999-02-24 住友電気工業株式会社 回路基板の加工方法
KR970011620B1 (ko) * 1991-05-23 1997-07-12 모토로라 인코포레이티드 집적회로 칩 캐리어
JPH04352439A (ja) * 1991-05-30 1992-12-07 Toshiba Corp 半導体装置の製造方法
US5436913A (en) * 1992-06-02 1995-07-25 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device using successively longer write pulses
JPH0632296A (ja) 1992-07-20 1994-02-08 Nec Corp 分離機構
JPH0650757A (ja) 1992-07-29 1994-02-25 Nagano Japan Radio Co 方位検出装置
JPH0660493A (ja) 1992-08-14 1994-03-04 Matsushita Electric Ind Co Ltd 磁気記録再生装置
JPH06151701A (ja) * 1992-11-09 1994-05-31 Sharp Corp 半導体装置の製造方法
JPH06283561A (ja) * 1993-03-29 1994-10-07 Takeshi Ikeda 半導体装置のパッケージ
FR2704691B1 (fr) * 1993-04-30 1995-06-02 Commissariat Energie Atomique Procédé d'enrobage de composants électroniques hybrides par billes sur un substrat.
JP3332555B2 (ja) * 1993-12-17 2002-10-07 株式会社東芝 半導体装置およびその製造方法
JPH07245360A (ja) * 1994-03-02 1995-09-19 Toshiba Corp 半導体パッケージおよびその製造方法
JP3246826B2 (ja) * 1994-03-30 2002-01-15 株式会社東芝 半導体パッケージ
JPH07302858A (ja) * 1994-04-28 1995-11-14 Toshiba Corp 半導体パッケージ
US5471027A (en) * 1994-07-22 1995-11-28 International Business Machines Corporation Method for forming chip carrier with a single protective encapsulant
US5579573A (en) * 1994-10-11 1996-12-03 Ford Motor Company Method for fabricating an undercoated chip electrically interconnected to a substrate
US5578527A (en) * 1995-06-23 1996-11-26 Industrial Technology Research Institute Connection construction and method of manufacturing the same

Also Published As

Publication number Publication date
EP0715348A3 (en) 1998-07-15
KR960019690A (ko) 1996-06-17
US5677246A (en) 1997-10-14
EP0715348A2 (en) 1996-06-05
KR0184371B1 (ko) 1999-03-20

Similar Documents

Publication Publication Date Title
FR2727356B1 (enExample)
EP0666525A3 (enExample)
BRPI9507160A (enExample)
TW281686B (enExample)
TW289851B (enExample)
FR2728975B1 (enExample)
EP0667627A3 (enExample)
FR2727655B1 (enExample)
FR2727991B1 (enExample)
FR2728019B1 (enExample)
FR2729032B1 (enExample)
IN188827B (enExample)
ECSDI940187S (enExample)
IN182493B (enExample)
IN183071B (enExample)
IN184087B (enExample)
IN180885B (enExample)
IN179509B (enExample)
ECSDI940184S (enExample)
ECSDI940185S (enExample)
IN181892B (enExample)
ECSDI940192S (enExample)
ECSDI940193S (enExample)
ECSDI940194S (enExample)
IN189859B (enExample)