TW289162B - - Google Patents

Info

Publication number
TW289162B
TW289162B TW084107179A TW84107179A TW289162B TW 289162 B TW289162 B TW 289162B TW 084107179 A TW084107179 A TW 084107179A TW 84107179 A TW84107179 A TW 84107179A TW 289162 B TW289162 B TW 289162B
Authority
TW
Taiwan
Application number
TW084107179A
Other languages
Chinese (zh)
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW289162B publication Critical patent/TW289162B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G11C29/787—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using a fuse hierarchy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Semiconductor Memories (AREA)
TW084107179A 1994-08-01 1995-07-11 TW289162B (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19899294A JP3226422B2 (ja) 1994-08-01 1994-08-01 半導体記憶装置及びメモリセルのｄｃ電流不良検出方法

Publications (1)

Publication Number Publication Date
TW289162B true TW289162B (enrdf_load_stackoverflow) 1996-10-21

Family

ID=16400310

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084107179A TW289162B (enrdf_load_stackoverflow) 1994-08-01 1995-07-11

Country Status (3)

Country Link
JP (1) JP3226422B2 (enrdf_load_stackoverflow)
KR (1) KR960008834A (enrdf_load_stackoverflow)
TW (1) TW289162B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI418813B (zh) * 2011-04-11 2013-12-11 Macronix Int Co Ltd 記憶體陣列之局部位元線缺陷之檢測方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6081465A (en) * 1998-04-30 2000-06-27 Hewlett-Packard Company Static RAM circuit for defect analysis
AU2001229896A1 (en) 2000-01-28 2001-08-07 Interuniversitair Micro-Elektronica Centrum A method for transferring and stacking of semiconductor devices
JP2001283598A (ja) * 2000-03-29 2001-10-12 Nec Kansai Ltd Ｓｒａｍペレットにおける冗長回路切り替えのための検査方法
JP4727796B2 (ja) 2000-09-04 2011-07-20 ルネサスエレクトロニクス株式会社 半導体集積回路
JP2002093195A (ja) 2000-09-18 2002-03-29 Mitsubishi Electric Corp 半導体記憶装置および半導体記憶装置のテスト方法
KR20030030165A (ko) * 2001-10-09 2003-04-18 동부전자 주식회사 메모리 디바이스의 전원 불량 테스트 장치
KR100881189B1 (ko) * 2006-08-28 2009-02-05 삼성전자주식회사 취약 배선을 검출하기 위한 배선 검출 회로

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI418813B (zh) * 2011-04-11 2013-12-11 Macronix Int Co Ltd 記憶體陣列之局部位元線缺陷之檢測方法

Also Published As

Publication number Publication date
KR960008834A (ko) 1996-03-22
JP3226422B2 (ja) 2001-11-05
JPH0845299A (ja) 1996-02-16

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