TW288166B - The method of forming BPSG film - Google Patents
The method of forming BPSG filmInfo
- Publication number
- TW288166B TW288166B TW085102003A TW85102003A TW288166B TW 288166 B TW288166 B TW 288166B TW 085102003 A TW085102003 A TW 085102003A TW 85102003 A TW85102003 A TW 85102003A TW 288166 B TW288166 B TW 288166B
- Authority
- TW
- Taiwan
- Prior art keywords
- bpsg film
- furnace
- wafer
- forming
- cooling zone
- Prior art date
Links
- 239000005380 borophosphosilicate glass Substances 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 2
- 238000001816 cooling Methods 0.000 abstract 2
- 238000010583 slow cooling Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
- C03C27/04—Joining glass to metal by means of an interlayer
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950018554A KR0172039B1 (ko) | 1995-06-30 | 1995-06-30 | 보론 포스포러스 실리케이트 글래스막 형성방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW288166B true TW288166B (en) | 1996-10-11 |
Family
ID=19419019
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085102003A TW288166B (en) | 1995-06-30 | 1996-02-16 | The method of forming BPSG film |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPH0917781A (ja) |
KR (1) | KR0172039B1 (ja) |
CN (1) | CN1061635C (ja) |
DE (1) | DE19605787B4 (ja) |
GB (1) | GB2302870B (ja) |
TW (1) | TW288166B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100802451B1 (ko) * | 2004-03-05 | 2008-02-13 | 쇼와 덴코 가부시키가이샤 | 인화 붕소계 반도체 발광 소자 |
WO2006082468A1 (en) * | 2005-02-03 | 2006-08-10 | S.O.I.Tec Silicon On Insulator Technologies | Method for high-temperature annealing a multilayer wafer |
CN111540783B (zh) * | 2020-01-16 | 2023-09-26 | 重庆康佳光电科技有限公司 | 一种金属-氧化物半导体场效应晶体管及其制备方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2538722B2 (ja) * | 1991-06-20 | 1996-10-02 | 株式会社半導体プロセス研究所 | 半導体装置の製造方法 |
KR940009599B1 (ko) * | 1991-10-30 | 1994-10-15 | 삼성전자 주식회사 | 반도체 장치의 층간 절연막 형성방법 |
US5409858A (en) * | 1993-08-06 | 1995-04-25 | Micron Semiconductor, Inc. | Method for optimizing thermal budgets in fabricating semiconductors |
-
1995
- 1995-06-30 KR KR1019950018554A patent/KR0172039B1/ko not_active IP Right Cessation
-
1996
- 1996-02-14 GB GB9603071A patent/GB2302870B/en not_active Expired - Fee Related
- 1996-02-16 JP JP8028788A patent/JPH0917781A/ja active Pending
- 1996-02-16 TW TW085102003A patent/TW288166B/zh active
- 1996-02-18 CN CN96105729A patent/CN1061635C/zh not_active Expired - Fee Related
- 1996-02-18 DE DE19605787A patent/DE19605787B4/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB2302870B (en) | 1999-04-28 |
DE19605787A1 (de) | 1997-01-02 |
JPH0917781A (ja) | 1997-01-17 |
DE19605787B4 (de) | 2007-05-16 |
KR970003653A (ko) | 1997-01-28 |
KR0172039B1 (ko) | 1999-03-30 |
CN1145336A (zh) | 1997-03-19 |
GB2302870A (en) | 1997-02-05 |
CN1061635C (zh) | 2001-02-07 |
GB9603071D0 (en) | 1996-04-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW328631B (en) | Susceptor, apparatus of heat-treating semiconductor wafer, and method of heat-treating the same | |
EP0616360A3 (en) | Device and method for cooling semiconductor wafers. | |
ZA929725B (en) | Method and apparatus for controlling the cutting and placement of components on an moving substrate, and article made therewith. | |
CA2177645A1 (en) | Apparatus and Method for Depositing a Substance with Temperature Control | |
FR2713016B1 (fr) | Dispositif semiconducteur à haute intégration et procédé pour la fabrication de celui-ci. | |
EP1179842A3 (en) | Semiconductor substrate and method for preparing same | |
EP0650197A3 (en) | Integrated thin film semiconductor circuit and its manufacturing process. | |
EP0631365A3 (en) | Sheath for water cooling and method of manufacturing the same. | |
EP0628992A3 (en) | Method of manufacturing semiconductor wafers. | |
MY122412A (en) | Heat treatment method for semiconductor substrates | |
MY120140A (en) | Adhesive sheet for wafer setting and process for producing electronic components | |
TW430866B (en) | Thermal treatment apparatus | |
AU1923397A (en) | Method of manufacturing cooling devices made up of several metal shaped-section elements for mounting on semiconductor components, shaped-section elements for use in the manufacture of such cooling devices and cooling devices manufactured by the method | |
AU6260494A (en) | Heat exchanger device and method for cooling the inner chamber therof | |
EP0666336A4 (en) | HIGH MELTING POINT METAL SILICIDE TARGET, MANUFACTURING METHOD THEREOF, HIGH MELTING POINT METAL SILICIDE LAYER, AND SEMICONDUCTOR DEVICE. | |
GB2347887A (en) | Casting of molten metal in an open ended mold cavity | |
AU624276B2 (en) | Ladle for the preparation of metal provided with a refractory bottom lining and method for producing said refractory bottom lining | |
NO940416D0 (no) | Fremgangsmaate for tetning av en kanal | |
EP1088787A4 (en) | METHOD FOR PRODUCING METAL OXIDE, TARGET COMPRISING METAL OXIDE FOR FORMING A THIN FILM OF METAL OXIDE, METHOD FOR PRODUCING SAME AND METHOD FOR PRODUCING THIN FILM OF METAL OXIDE | |
IT1266851B1 (it) | Metodo per il controllo di un apparato frigorifero, ed apparato implementante tale metodo. | |
CA2472941A1 (en) | Apparatus and method for controlling the temperature of manufacturing equipment | |
TW288166B (en) | The method of forming BPSG film | |
TW357405B (en) | Method for pre-shaping a semiconductor substrate for polishing and structure | |
EP0663458A4 (en) | EVAPORATED FILM, METHOD FOR MEASURING ITS FORM, METHOD FOR MONITORING THE MANUFACTURING PROCESS, MANUFACTURING METHOD, MOLD DETERMINATION DEVICE AND MONITORING DEVICE. | |
EP0612128A3 (en) | Semiconductor laser and manufacturing process. |