TW284909B - Bipolar transistor and its semiconductor device - Google Patents

Bipolar transistor and its semiconductor device

Info

Publication number
TW284909B
TW284909B TW085100698A TW85100698A TW284909B TW 284909 B TW284909 B TW 284909B TW 085100698 A TW085100698 A TW 085100698A TW 85100698 A TW85100698 A TW 85100698A TW 284909 B TW284909 B TW 284909B
Authority
TW
Taiwan
Prior art keywords
area
conducting
collector
bipolar transistor
substrate
Prior art date
Application number
TW085100698A
Other languages
English (en)
Inventor
Hiroki Honda
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW284909B publication Critical patent/TW284909B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/93—Variable capacitance diodes, e.g. varactors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42304—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41708—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW085100698A 1996-01-19 1996-01-22 Bipolar transistor and its semiconductor device TW284909B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8007342A JPH09199513A (ja) 1996-01-19 1996-01-19 バイポーラトランジスタおよび該バイポーラトランジスタを有する半導体装置

Publications (1)

Publication Number Publication Date
TW284909B true TW284909B (en) 1996-09-01

Family

ID=11663278

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085100698A TW284909B (en) 1996-01-19 1996-01-22 Bipolar transistor and its semiconductor device

Country Status (4)

Country Link
US (1) US5962913A (zh)
JP (1) JPH09199513A (zh)
KR (1) KR100203616B1 (zh)
TW (1) TW284909B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7604390B2 (en) 2006-11-02 2009-10-20 Au Optronics Corp. Supporting structure and fixing component having a through-hole and opening for pin structure engagement and backlight module using the same

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11102916A (ja) * 1997-09-29 1999-04-13 Nec Corp 半導体集積回路装置およびその設計方法
KR101024869B1 (ko) * 2003-03-21 2011-03-31 매그나칩 반도체 유한회사 반도체소자 및 그 제조방법
JP2007242923A (ja) * 2006-03-09 2007-09-20 Matsushita Electric Ind Co Ltd 半導体集積回路の静電気保護素子
JP2011228505A (ja) 2010-04-20 2011-11-10 Panasonic Corp 半導体集積回路
CN102122659B (zh) * 2011-01-17 2016-02-03 上海华虹宏力半导体制造有限公司 双极互补金属氧化半导体器件及其制备方法
US9728603B2 (en) * 2015-06-22 2017-08-08 Globalfoundries Inc. Bipolar junction transistors with double-tapered emitter fingers
CN112259603B (zh) * 2020-10-21 2023-02-21 合肥晶合集成电路股份有限公司 双极结晶体管及其制造方法、控制方法和信号放大电路

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3450961A (en) * 1966-05-26 1969-06-17 Westinghouse Electric Corp Semiconductor devices with a region having portions of differing depth and concentration
US3758797A (en) * 1971-07-07 1973-09-11 Signetics Corp Solid state bistable switching device and method
JPS59121864A (ja) * 1982-12-27 1984-07-14 Toshiba Corp 半導体装置
US4536945A (en) * 1983-11-02 1985-08-27 National Semiconductor Corporation Process for producing CMOS structures with Schottky bipolar transistors
JPS60126864A (ja) * 1983-12-13 1985-07-06 Toshiba Corp 半導体装置
JPH0671066B2 (ja) * 1985-04-05 1994-09-07 富士通株式会社 半導体集積回路装置の製造方法
JPH0658912B2 (ja) * 1985-05-07 1994-08-03 日本電信電話株式会社 バイポーラトランジスタの製造方法
JPS62216365A (ja) * 1986-03-18 1987-09-22 Sanyo Electric Co Ltd トランジスタ
US5011784A (en) * 1988-01-21 1991-04-30 Exar Corporation Method of making a complementary BiCMOS process with isolated vertical PNP transistors
JPH0831473B2 (ja) * 1988-05-20 1996-03-27 富士通株式会社 半導体装置
JPH04138720A (ja) * 1990-09-28 1992-05-13 Toshiba Corp 半導体装置
KR940018967A (ko) * 1993-01-30 1994-08-19 오가 노리오 반도체장치 및 그 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7604390B2 (en) 2006-11-02 2009-10-20 Au Optronics Corp. Supporting structure and fixing component having a through-hole and opening for pin structure engagement and backlight module using the same

Also Published As

Publication number Publication date
KR100203616B1 (ko) 1999-07-01
JPH09199513A (ja) 1997-07-31
US5962913A (en) 1999-10-05
KR970060535A (ko) 1997-08-12

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