TW283256B - - Google Patents

Info

Publication number
TW283256B
TW283256B TW083109237A TW83109237A TW283256B TW 283256 B TW283256 B TW 283256B TW 083109237 A TW083109237 A TW 083109237A TW 83109237 A TW83109237 A TW 83109237A TW 283256 B TW283256 B TW 283256B
Authority
TW
Taiwan
Application number
TW083109237A
Other languages
Chinese (zh)
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of TW283256B publication Critical patent/TW283256B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01318—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/915—Active solid-state devices, e.g. transistors, solid-state diodes with titanium nitride portion or region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/927—Electromigration resistant metallization
TW083109237A 1993-11-12 1994-10-05 TW283256B (ref)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/150,900 US5393703A (en) 1993-11-12 1993-11-12 Process for forming a conductive layer for semiconductor devices

Publications (1)

Publication Number Publication Date
TW283256B true TW283256B (ref) 1996-08-11

Family

ID=22536478

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083109237A TW283256B (ref) 1993-11-12 1994-10-05

Country Status (6)

Country Link
US (2) US5393703A (ref)
EP (1) EP0653790A1 (ref)
JP (1) JPH07183382A (ref)
KR (1) KR950015603A (ref)
SG (1) SG43018A1 (ref)
TW (1) TW283256B (ref)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5393703A (en) * 1993-11-12 1995-02-28 Motorola, Inc. Process for forming a conductive layer for semiconductor devices
JPH07283414A (ja) * 1994-04-05 1995-10-27 Toshiba Corp Ｍｏｓ型半導体装置
KR950034495A (ko) * 1994-04-20 1995-12-28 윌리엄 이.힐러 반도체 장치 제조를 위한 고 수율 광 경화 공정
US5571751A (en) * 1994-05-09 1996-11-05 National Semiconductor Corporation Interconnect structures for integrated circuits
KR0124644B1 (ko) * 1994-05-10 1997-12-11 문정환 반도체소자의 다층금속배선의 형성방법
US5910021A (en) * 1994-07-04 1999-06-08 Yamaha Corporation Manufacture of semiconductor device with fine pattens
US5696030A (en) * 1994-09-30 1997-12-09 International Business Machines Corporation Integrated circuit contacts having improved electromigration characteristics and fabrication methods therefor
US5449639A (en) * 1994-10-24 1995-09-12 Taiwan Semiconductor Manufacturing Company Ltd. Disposable metal anti-reflection coating process used together with metal dry/wet etch
US5527736A (en) * 1995-04-03 1996-06-18 Taiwan Semiconductor Manufacturing Co. Dimple-free tungsten etching back process
US5610100A (en) * 1995-04-13 1997-03-11 Texas Instruments Inc. Method for concurrently forming holes for interconnection between different conductive layers and a substrate element or circuit element close to the substrate surface
US5840624A (en) * 1996-03-15 1998-11-24 Taiwan Semiconductor Manufacturing Company, Ltd Reduction of via over etching for borderless contacts
JP3308806B2 (ja) * 1996-04-03 2002-07-29 株式会社東芝 半導体装置及びその製造方法
US5654216A (en) * 1996-04-08 1997-08-05 Chartered Semiconductor Manufacturing Pte Ltd. Formation of a metal via structure from a composite metal layer
US6110828A (en) * 1996-12-30 2000-08-29 Applied Materials, Inc. In-situ capped aluminum plug (CAP) process using selective CVD AL for integrated plug/interconnect metallization
KR100430685B1 (ko) * 1996-12-31 2004-07-27 주식회사 하이닉스반도체 반도체소자의금속배선형성방법
US20040222525A1 (en) * 1997-03-14 2004-11-11 Rhodes Howard E. Advanced VLSI metallization
US5917197A (en) * 1997-05-21 1999-06-29 Siemens Aktiengesellschaft Integrated multi-layer test pads
US6555465B2 (en) * 1997-12-05 2003-04-29 Yamaha Corp. Multi-layer wiring structure of integrated circuit and manufacture of multi-layer wiring
US5925932A (en) 1997-12-18 1999-07-20 Advanced Micro Devices, Inc. Borderless vias
US6144096A (en) * 1998-10-05 2000-11-07 Advanced Micro Devices, Inc. Low resistivity semiconductor barrier layers and manufacturing method therefor
JP4236778B2 (ja) * 1999-11-01 2009-03-11 株式会社ルネサステクノロジ 半導体装置
US7061111B2 (en) * 2000-04-11 2006-06-13 Micron Technology, Inc. Interconnect structure for use in an integrated circuit
US6762501B1 (en) * 2003-04-14 2004-07-13 Texas Instruments Incorporated Low stress integrated circuit copper interconnect structures
US20050179716A1 (en) * 2004-02-14 2005-08-18 Eastman Kodak Company Apparatus and method of controlling temperatures in ejection mechanisms
CN104253085B (zh) * 2013-06-30 2017-08-25 无锡华润上华科技有限公司 一种消除顶层金属层结合区合金表面隆起的方法
US20150372251A1 (en) * 2014-06-19 2015-12-24 Toshishige Fujii Electric element package
US9953940B2 (en) * 2015-06-26 2018-04-24 International Business Machines Corporation Corrosion resistant aluminum bond pad structure
US11024592B2 (en) * 2019-10-18 2021-06-01 Nanya Technology Corporation Semiconductor device with spacer over sidewall of bonding pad and method for preparing the same

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2119930B1 (ref) * 1970-12-31 1974-08-19 Ibm
FR2253274A1 (en) * 1973-11-30 1975-06-27 Radiotechnique Compelec Application of aluminium based alloy on silicon - without diffusing the aluminium into the silicon
JPS52115175A (en) * 1976-03-24 1977-09-27 Hitachi Ltd Semiconductor device
US4433004A (en) * 1979-07-11 1984-02-21 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device and a method for manufacturing the same
JPS58124235A (ja) * 1982-01-20 1983-07-23 Hitachi Cable Ltd 半導体装置用アルミ合金極細線
JPS59198734A (ja) * 1983-04-25 1984-11-10 Mitsubishi Electric Corp 多層配線構造
JPS6285443A (ja) * 1985-10-11 1987-04-18 Hitachi Ltd 半導体装置の製造法
JPS62240737A (ja) * 1986-04-11 1987-10-21 Nippon Mining Co Ltd 半導体配線材料用ｂ、ｎ含有アルミニウム合金
US4884123A (en) * 1987-02-19 1989-11-28 Advanced Micro Devices, Inc. Contact plug and interconnect employing a barrier lining and a backfilled conductor material
JPS63253644A (ja) * 1987-04-10 1988-10-20 Nec Corp 半導体装置
US5016081A (en) * 1989-03-22 1991-05-14 At&T Bell Laboratories Mobile ion getterer for metal conductors
US5141897A (en) * 1990-03-23 1992-08-25 At&T Bell Laboratories Method of making integrated circuit interconnection
JP2847680B2 (ja) * 1990-03-26 1999-01-20 株式会社村田製作所 セラミック電子部品及びその製造方法
JPH0444228A (ja) * 1990-06-07 1992-02-14 Seiko Epson Corp 半導体装置
JPH0471231A (ja) * 1990-07-12 1992-03-05 Oki Electric Ind Co Ltd 半導体素子の製造方法
US5393703A (en) * 1993-11-12 1995-02-28 Motorola, Inc. Process for forming a conductive layer for semiconductor devices

Also Published As

Publication number Publication date
SG43018A1 (en) 1997-10-17
EP0653790A1 (en) 1995-05-17
US5623166A (en) 1997-04-22
JPH07183382A (ja) 1995-07-21
US5393703A (en) 1995-02-28
KR950015603A (ko) 1995-06-17

Similar Documents

Publication Publication Date Title
TW283256B (ref)
EP0637598A3 (ref)
EP0644696A3 (ref)
EP0661532A3 (ref)
EP0643239A3 (ref)
TW251390B (ref)
EP0686452A4 (ref)
TW273547B (ref)
TW243413B (ref)
EP0661739A3 (ref)
TW259898B (ref)
FR2706904B1 (ref)
TW236719B (ref)
IN182750B (ref)
IN178566B (ref)
ECSDI930150S (ref)
ECSDI930156S (ref)
ECSDI930173S (ref)
ECSDI930161S (ref)
ECSMU930027U (ref)
ECSDI930165S (ref)
GB9313952D0 (ref)
IN187945B (ref)
ECSDI930174S (ref)
ECSDI930175S (ref)