TW283256B - - Google Patents
Info
- Publication number
- TW283256B TW283256B TW083109237A TW83109237A TW283256B TW 283256 B TW283256 B TW 283256B TW 083109237 A TW083109237 A TW 083109237A TW 83109237 A TW83109237 A TW 83109237A TW 283256 B TW283256 B TW 283256B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/915—Active solid-state devices, e.g. transistors, solid-state diodes with titanium nitride portion or region
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/927—Electromigration resistant metallization
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/150,900 US5393703A (en) | 1993-11-12 | 1993-11-12 | Process for forming a conductive layer for semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
TW283256B true TW283256B (zh) | 1996-08-11 |
Family
ID=22536478
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW083109237A TW283256B (zh) | 1993-11-12 | 1994-10-05 |
Country Status (6)
Country | Link |
---|---|
US (2) | US5393703A (zh) |
EP (1) | EP0653790A1 (zh) |
JP (1) | JPH07183382A (zh) |
KR (1) | KR950015603A (zh) |
SG (1) | SG43018A1 (zh) |
TW (1) | TW283256B (zh) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5393703A (en) * | 1993-11-12 | 1995-02-28 | Motorola, Inc. | Process for forming a conductive layer for semiconductor devices |
JPH07283414A (ja) * | 1994-04-05 | 1995-10-27 | Toshiba Corp | Mos型半導体装置 |
KR950034495A (ko) * | 1994-04-20 | 1995-12-28 | 윌리엄 이.힐러 | 반도체 장치 제조를 위한 고 수율 광 경화 공정 |
US5571751A (en) * | 1994-05-09 | 1996-11-05 | National Semiconductor Corporation | Interconnect structures for integrated circuits |
KR0124644B1 (ko) * | 1994-05-10 | 1997-12-11 | 문정환 | 반도체소자의 다층금속배선의 형성방법 |
US5910021A (en) * | 1994-07-04 | 1999-06-08 | Yamaha Corporation | Manufacture of semiconductor device with fine pattens |
US5696030A (en) * | 1994-09-30 | 1997-12-09 | International Business Machines Corporation | Integrated circuit contacts having improved electromigration characteristics and fabrication methods therefor |
US5449639A (en) * | 1994-10-24 | 1995-09-12 | Taiwan Semiconductor Manufacturing Company Ltd. | Disposable metal anti-reflection coating process used together with metal dry/wet etch |
US5527736A (en) * | 1995-04-03 | 1996-06-18 | Taiwan Semiconductor Manufacturing Co. | Dimple-free tungsten etching back process |
US5610100A (en) * | 1995-04-13 | 1997-03-11 | Texas Instruments Inc. | Method for concurrently forming holes for interconnection between different conductive layers and a substrate element or circuit element close to the substrate surface |
US5840624A (en) * | 1996-03-15 | 1998-11-24 | Taiwan Semiconductor Manufacturing Company, Ltd | Reduction of via over etching for borderless contacts |
JP3308806B2 (ja) * | 1996-04-03 | 2002-07-29 | 株式会社東芝 | 半導体装置及びその製造方法 |
US5654216A (en) * | 1996-04-08 | 1997-08-05 | Chartered Semiconductor Manufacturing Pte Ltd. | Formation of a metal via structure from a composite metal layer |
US6110828A (en) * | 1996-12-30 | 2000-08-29 | Applied Materials, Inc. | In-situ capped aluminum plug (CAP) process using selective CVD AL for integrated plug/interconnect metallization |
KR100430685B1 (ko) * | 1996-12-31 | 2004-07-27 | 주식회사 하이닉스반도체 | 반도체소자의금속배선형성방법 |
US20040222525A1 (en) * | 1997-03-14 | 2004-11-11 | Rhodes Howard E. | Advanced VLSI metallization |
US5917197A (en) * | 1997-05-21 | 1999-06-29 | Siemens Aktiengesellschaft | Integrated multi-layer test pads |
US6555465B2 (en) * | 1997-12-05 | 2003-04-29 | Yamaha Corp. | Multi-layer wiring structure of integrated circuit and manufacture of multi-layer wiring |
US5925932A (en) * | 1997-12-18 | 1999-07-20 | Advanced Micro Devices, Inc. | Borderless vias |
US6144096A (en) * | 1998-10-05 | 2000-11-07 | Advanced Micro Devices, Inc. | Low resistivity semiconductor barrier layers and manufacturing method therefor |
JP4236778B2 (ja) * | 1999-11-01 | 2009-03-11 | 株式会社ルネサステクノロジ | 半導体装置 |
US7061111B2 (en) * | 2000-04-11 | 2006-06-13 | Micron Technology, Inc. | Interconnect structure for use in an integrated circuit |
US6762501B1 (en) * | 2003-04-14 | 2004-07-13 | Texas Instruments Incorporated | Low stress integrated circuit copper interconnect structures |
US20050179716A1 (en) * | 2004-02-14 | 2005-08-18 | Eastman Kodak Company | Apparatus and method of controlling temperatures in ejection mechanisms |
CN104253085B (zh) * | 2013-06-30 | 2017-08-25 | 无锡华润上华科技有限公司 | 一种消除顶层金属层结合区合金表面隆起的方法 |
US20150372251A1 (en) * | 2014-06-19 | 2015-12-24 | Toshishige Fujii | Electric element package |
US9953940B2 (en) * | 2015-06-26 | 2018-04-24 | International Business Machines Corporation | Corrosion resistant aluminum bond pad structure |
US11024592B2 (en) * | 2019-10-18 | 2021-06-01 | Nanya Technology Corporation | Semiconductor device with spacer over sidewall of bonding pad and method for preparing the same |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2119930B1 (zh) * | 1970-12-31 | 1974-08-19 | Ibm | |
FR2253274A1 (en) * | 1973-11-30 | 1975-06-27 | Radiotechnique Compelec | Application of aluminium based alloy on silicon - without diffusing the aluminium into the silicon |
JPS52115175A (en) * | 1976-03-24 | 1977-09-27 | Hitachi Ltd | Semiconductor device |
US4433004A (en) * | 1979-07-11 | 1984-02-21 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor device and a method for manufacturing the same |
JPS58124235A (ja) * | 1982-01-20 | 1983-07-23 | Hitachi Cable Ltd | 半導体装置用アルミ合金極細線 |
JPS59198734A (ja) * | 1983-04-25 | 1984-11-10 | Mitsubishi Electric Corp | 多層配線構造 |
JPS6285443A (ja) * | 1985-10-11 | 1987-04-18 | Hitachi Ltd | 半導体装置の製造法 |
JPS62240737A (ja) * | 1986-04-11 | 1987-10-21 | Nippon Mining Co Ltd | 半導体配線材料用b、n含有アルミニウム合金 |
US4884123A (en) * | 1987-02-19 | 1989-11-28 | Advanced Micro Devices, Inc. | Contact plug and interconnect employing a barrier lining and a backfilled conductor material |
JPS63253644A (ja) * | 1987-04-10 | 1988-10-20 | Nec Corp | 半導体装置 |
US5016081A (en) * | 1989-03-22 | 1991-05-14 | At&T Bell Laboratories | Mobile ion getterer for metal conductors |
US5141897A (en) * | 1990-03-23 | 1992-08-25 | At&T Bell Laboratories | Method of making integrated circuit interconnection |
JP2847680B2 (ja) * | 1990-03-26 | 1999-01-20 | 株式会社村田製作所 | セラミック電子部品及びその製造方法 |
JPH0444228A (ja) * | 1990-06-07 | 1992-02-14 | Seiko Epson Corp | 半導体装置 |
JPH0471231A (ja) * | 1990-07-12 | 1992-03-05 | Oki Electric Ind Co Ltd | 半導体素子の製造方法 |
US5393703A (en) * | 1993-11-12 | 1995-02-28 | Motorola, Inc. | Process for forming a conductive layer for semiconductor devices |
-
1993
- 1993-11-12 US US08/150,900 patent/US5393703A/en not_active Expired - Fee Related
-
1994
- 1994-10-05 TW TW083109237A patent/TW283256B/zh active
- 1994-10-26 KR KR1019940027332A patent/KR950015603A/ko not_active Application Discontinuation
- 1994-11-02 EP EP94117231A patent/EP0653790A1/en not_active Ceased
- 1994-11-02 SG SG1996002533A patent/SG43018A1/en unknown
- 1994-11-11 JP JP6301657A patent/JPH07183382A/ja active Pending
- 1994-12-05 US US08/349,219 patent/US5623166A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH07183382A (ja) | 1995-07-21 |
EP0653790A1 (en) | 1995-05-17 |
SG43018A1 (en) | 1997-10-17 |
KR950015603A (ko) | 1995-06-17 |
US5623166A (en) | 1997-04-22 |
US5393703A (en) | 1995-02-28 |