TW281767B - - Google Patents

Info

Publication number
TW281767B
TW281767B TW085101331A TW85101331A TW281767B TW 281767 B TW281767 B TW 281767B TW 085101331 A TW085101331 A TW 085101331A TW 85101331 A TW85101331 A TW 85101331A TW 281767 B TW281767 B TW 281767B
Authority
TW
Taiwan
Application number
TW085101331A
Original Assignee
Toshiba Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Co Ltd filed Critical Toshiba Co Ltd
Application granted granted Critical
Publication of TW281767B publication Critical patent/TW281767B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
TW085101331A 1995-01-17 1996-02-02 TW281767B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7004551A JPH08195083A (ja) 1995-01-17 1995-01-17 半導体記憶装置

Publications (1)

Publication Number Publication Date
TW281767B true TW281767B (zh) 1996-07-21

Family

ID=11587192

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085101331A TW281767B (zh) 1995-01-17 1996-02-02

Country Status (5)

Country Link
US (1) US5699289A (zh)
JP (1) JPH08195083A (zh)
KR (1) KR100196017B1 (zh)
CN (1) CN1084516C (zh)
TW (1) TW281767B (zh)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3361018B2 (ja) * 1996-11-11 2003-01-07 株式会社東芝 半導体記憶装置
KR100258345B1 (ko) * 1996-11-28 2000-06-01 윤종용 파워라인의 배치구조를 개선한 반도체 메모리 장치
US6130470A (en) * 1997-03-24 2000-10-10 Advanced Micro Devices, Inc. Static random access memory cell having buried sidewall capacitors between storage nodes
US5844836A (en) * 1997-03-24 1998-12-01 Advanced Micro Devices, Inc. Memory cell having increased capacitance via a local interconnect to gate capacitor and a method for making such a cell
JP4056107B2 (ja) * 1997-06-20 2008-03-05 エルピーダメモリ株式会社 半導体集積回路
CA2217359C (en) * 1997-09-30 2005-04-12 Mosaid Technologies Incorporated Method for multilevel dram sensing
JP4017248B2 (ja) 1998-04-10 2007-12-05 株式会社日立製作所 半導体装置
JPH11306763A (ja) * 1998-04-23 1999-11-05 Nec Corp 半導体記憶装置
DE19907155A1 (de) * 1999-02-19 2000-08-31 Siemens Ag Integrierte Halbleiterspeicheranordnung mit Selbstpufferung von Versorgungsspannungen
JP2001067868A (ja) 1999-08-31 2001-03-16 Mitsubishi Electric Corp 半導体記憶装置
KR100351054B1 (ko) * 2000-06-13 2002-09-05 삼성전자 주식회사 승압 전압 레벨 안정화 회로를 구비한 반도체 메모리장치
US6339541B1 (en) * 2000-06-16 2002-01-15 United Memories, Inc. Architecture for high speed memory circuit having a relatively large number of internal data lines
JP4195821B2 (ja) * 2003-02-26 2008-12-17 富士通マイクロエレクトロニクス株式会社 半導体集積回路の設計方法
JP2006100436A (ja) * 2004-09-28 2006-04-13 Toshiba Corp 半導体装置
JP4787592B2 (ja) * 2005-10-14 2011-10-05 パナソニック株式会社 システムｌｓｉ
KR100727411B1 (ko) * 2005-12-29 2007-06-13 삼성전자주식회사 오픈 비트라인 구조의 메모리 셀 어레이를 가지는 반도체메모리 장치의 승압전압 발생회로 및 승압전압 발생방법
KR100776738B1 (ko) * 2006-04-06 2007-11-19 주식회사 하이닉스반도체 반도체 메모리 장치
KR100743659B1 (ko) * 2006-06-30 2007-07-30 주식회사 하이닉스반도체 센스 앰프의 센싱 타이밍 제어 회로
US9196375B2 (en) * 2013-07-05 2015-11-24 Kabushiki Kaisha Toshiba Semiconductor storage device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5208782A (en) * 1989-02-09 1993-05-04 Hitachi, Ltd. Semiconductor integrated circuit device having a plurality of memory blocks and a lead on chip (LOC) arrangement
JPH07114259B2 (ja) * 1989-10-19 1995-12-06 株式会社東芝 半導体記憶装置
US5040144A (en) * 1989-11-28 1991-08-13 Motorola, Inc. Integrated circuit with improved power supply distribution
JP2758504B2 (ja) * 1990-07-06 1998-05-28 松下電器産業株式会社 半導体記憶装置
JPH0562461A (ja) * 1991-04-09 1993-03-12 Mitsubishi Electric Corp 半導体記憶装置
KR940003410B1 (ko) * 1991-08-01 1994-04-21 삼성전자 주식회사 망사 구조의 전원선을 가지는 반도체 메모리 장치
US5325336A (en) * 1992-09-10 1994-06-28 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having power line arranged in a meshed shape
JP2792795B2 (ja) * 1992-10-29 1998-09-03 三菱電機株式会社 半導体集積装置
KR970005691B1 (ko) * 1993-09-06 1997-04-18 삼성전자주식회사 전원노이즈감소를 위한 전원라인구조를 가지는 반도체칩

Also Published As

Publication number Publication date
JPH08195083A (ja) 1996-07-30
KR100196017B1 (ko) 1999-06-15
CN1084516C (zh) 2002-05-08
CN1134023A (zh) 1996-10-23
US5699289A (en) 1997-12-16
KR960030233A (ko) 1996-08-17

Similar Documents

Publication Publication Date Title
DE69638352D1 (zh)
DE69637714D1 (zh)
IN185295B (zh)
TW281767B (zh)
DK143195A (zh)
ECSDI950232S (zh)
IN187198B (zh)
FR2730754B3 (zh)
GB9614320D0 (zh)
DK0727898T3 (zh)
ECSDI950233S (zh)
IN183427B (zh)
IN183453B (zh)
IN183493B (zh)
IN184501B (zh)
DK126096A (zh)
IN183000B (zh)
IN186221B (zh)
ECSDI950231S (zh)
ECSDI950230S (zh)
ECSDI950229S (zh)
ECSDI950223S (zh)
IN187708B (zh)
EP0840665A4 (zh)
CN3035869S (zh)

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees