TW280003B - Fabrication method of IC metal structure - Google Patents

Fabrication method of IC metal structure

Info

Publication number
TW280003B
TW280003B TW084113806A TW84113806A TW280003B TW 280003 B TW280003 B TW 280003B TW 084113806 A TW084113806 A TW 084113806A TW 84113806 A TW84113806 A TW 84113806A TW 280003 B TW280003 B TW 280003B
Authority
TW
Taiwan
Prior art keywords
contact hole
metal
shallow trench
forming
photoresist
Prior art date
Application number
TW084113806A
Other languages
English (en)
Inventor
Chorng-Guang Lii
Rong-Shian Sheu
Biing-Nan Tzeng
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Priority to TW084113806A priority Critical patent/TW280003B/zh
Application granted granted Critical
Publication of TW280003B publication Critical patent/TW280003B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW084113806A 1995-12-23 1995-12-23 Fabrication method of IC metal structure TW280003B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW084113806A TW280003B (en) 1995-12-23 1995-12-23 Fabrication method of IC metal structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW084113806A TW280003B (en) 1995-12-23 1995-12-23 Fabrication method of IC metal structure

Publications (1)

Publication Number Publication Date
TW280003B true TW280003B (en) 1996-07-01

Family

ID=51397558

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084113806A TW280003B (en) 1995-12-23 1995-12-23 Fabrication method of IC metal structure

Country Status (1)

Country Link
TW (1) TW280003B (zh)

Similar Documents

Publication Publication Date Title
KR970009053B1 (en) Manufacturing method of semiconductor device
TW359008B (en) Double metal embedding
US5057186A (en) Method of taper-etching with photoresist adhesion layer
EP0859400A3 (en) Improvements in or relating to integrated circuits
ATE19712T1 (de) Verfahren zum herstellen einer isolierschicht zwischen metallisierungsebenen von integrierten halbleiterschaltungen.
TW280003B (en) Fabrication method of IC metal structure
US5913133A (en) Method of forming isolation layer for semiconductor device
KR100367694B1 (ko) 반도체소자의콘택제조방법
KR100396693B1 (ko) 반도체 소자의 금속배선 형성방법
KR100349692B1 (ko) 강유전체 메모리 소자의 보호막 식각 방법
TW354426B (en) Method for manufacturing a DRAM capacitor
KR100224778B1 (ko) 반도체 소자의 제조방법
KR100252883B1 (ko) 반도체소자의 콘택홀 매립방법
TW360939B (en) Method for forming capacitor in semiconductor device
KR100223938B1 (ko) 배선 형성 방법
KR100246467B1 (ko) 위상반전마스크의 사이드 로브를 이용하는 반도체 소자의 캐패시터 제조방법
KR970007821B1 (ko) 반도체 장치의 콘택 제조방법
TW430924B (en) Method for forming contact hole in semiconductor device
KR960010055B1 (en) Tungsten plug manufacturing method
KR970000959B1 (en) Contact plug forming method of semiconductor device
KR960008521B1 (en) Semiconductor device isolation method
TW255048B (en) Planarization method between metal layers
TW377503B (en) Structure of multilevel interconnects in semiconductor components and the method of manufacturing the same
KR970052299A (ko) 반도체 소자의 비아콘택 형성방법
TW344102B (en) Additive metallization process and structure

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent