TW279249B - - Google Patents

Info

Publication number
TW279249B
TW279249B TW084112514A TW84112514A TW279249B TW 279249 B TW279249 B TW 279249B TW 084112514 A TW084112514 A TW 084112514A TW 84112514 A TW84112514 A TW 84112514A TW 279249 B TW279249 B TW 279249B
Authority
TW
Taiwan
Application number
TW084112514A
Other languages
Chinese (zh)
Original Assignee
Handotai Energy Kenkyusho Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Handotai Energy Kenkyusho Kk filed Critical Handotai Energy Kenkyusho Kk
Application granted granted Critical
Publication of TW279249B publication Critical patent/TW279249B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Thin Film Transistor (AREA)
  • Drying Of Semiconductors (AREA)
TW084112514A 1994-11-26 1995-11-23 TW279249B (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6315473A JPH08153711A (ja) 1994-11-26 1994-11-26 エッチング装置

Publications (1)

Publication Number Publication Date
TW279249B true TW279249B (xx) 1996-06-21

Family

ID=18065785

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084112514A TW279249B (xx) 1994-11-26 1995-11-23

Country Status (4)

Country Link
JP (1) JPH08153711A (xx)
KR (1) KR100313386B1 (xx)
CN (4) CN100481466C (xx)
TW (1) TW279249B (xx)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3336975B2 (ja) * 1998-03-27 2002-10-21 日本電気株式会社 基板処理方法
DE10229037A1 (de) 2002-06-28 2004-01-29 Robert Bosch Gmbh Vorrichtung und Verfahren zur Erzeugung von Chlortrifluorid und Anlage zur Ätzung von Halbleitersubstraten mit dieser Vorrichtung
JP4134671B2 (ja) * 2002-10-17 2008-08-20 松下電器産業株式会社 プラズマ処理方法
KR101225312B1 (ko) * 2005-12-16 2013-01-22 엘지디스플레이 주식회사 프로세스 장치
US8207026B2 (en) * 2009-01-28 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
CN102074157B (zh) * 2011-01-07 2012-01-11 华南理工大学 一种敷铜板腐蚀设备
JP5924901B2 (ja) * 2011-10-17 2016-05-25 Hoya株式会社 転写用マスクの製造方法
KR102030797B1 (ko) 2012-03-30 2019-11-11 삼성디스플레이 주식회사 박막 트랜지스터 표시판 제조 방법
WO2016056300A1 (ja) * 2014-10-10 2016-04-14 関東電化工業株式会社 ケイ素化合物用エッチングガス組成物及びエッチング方法
JP7072440B2 (ja) 2018-05-16 2022-05-20 東京エレクトロン株式会社 シリコン含有膜のエッチング方法、コンピュータ記憶媒体、及びシリコン含有膜のエッチング装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4498953A (en) * 1983-07-27 1985-02-12 At&T Bell Laboratories Etching techniques
JPH0410621A (ja) * 1990-04-27 1992-01-14 Kawasaki Steel Corp 窒化シリコン膜のエッチング処理方法、及びその装置
JPH06103682B2 (ja) * 1990-08-09 1994-12-14 富士通株式会社 光励起ドライクリーニング方法および装置
JPH04196529A (ja) * 1990-11-28 1992-07-16 Toshiba Corp プラズマ処理装置
JPH04206822A (ja) * 1990-11-30 1992-07-28 Mitsubishi Electric Corp 半導体製造装置
JP3176118B2 (ja) * 1992-03-27 2001-06-11 株式会社東芝 多室型基板処理装置

Also Published As

Publication number Publication date
CN1136599A (zh) 1996-11-27
CN1245976A (zh) 2000-03-01
CN1825600A (zh) 2006-08-30
KR100313386B1 (ko) 2003-06-12
CN1248787A (zh) 2000-03-29
JPH08153711A (ja) 1996-06-11
CN1128893C (zh) 2003-11-26
CN100481466C (zh) 2009-04-22
KR960019566A (ko) 1996-06-17
CN1251331C (zh) 2006-04-12

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees