TW275142B - - Google Patents

Info

Publication number
TW275142B
TW275142B TW083109609A TW83109609A TW275142B TW 275142 B TW275142 B TW 275142B TW 083109609 A TW083109609 A TW 083109609A TW 83109609 A TW83109609 A TW 83109609A TW 275142 B TW275142 B TW 275142B
Authority
TW
Taiwan
Application number
TW083109609A
Original Assignee
Vlsi Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vlsi Technology Inc filed Critical Vlsi Technology Inc
Application granted granted Critical
Publication of TW275142B publication Critical patent/TW275142B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
TW083109609A 1993-10-18 1994-10-17 TW275142B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/138,298 US5427979A (en) 1993-10-18 1993-10-18 Method for making multi-level antifuse structure

Publications (1)

Publication Number Publication Date
TW275142B true TW275142B (zh) 1996-05-01

Family

ID=22481402

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083109609A TW275142B (zh) 1993-10-18 1994-10-17

Country Status (4)

Country Link
US (2) US5427979A (zh)
IL (1) IL111308A (zh)
TW (1) TW275142B (zh)
WO (1) WO1995011524A1 (zh)

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US5614756A (en) * 1990-04-12 1997-03-25 Actel Corporation Metal-to-metal antifuse with conductive
US5780323A (en) 1990-04-12 1998-07-14 Actel Corporation Fabrication method for metal-to-metal antifuses incorporating a tungsten via plug
US5581111A (en) * 1993-07-07 1996-12-03 Actel Corporation Dielectric-polysilicon-dielectric antifuse for field programmable logic applications
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US5793094A (en) * 1995-12-28 1998-08-11 Vlsi Technology, Inc. Methods for fabricating anti-fuse structures
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US5723358A (en) * 1996-04-29 1998-03-03 Vlsi Technology, Inc. Method of manufacturing amorphous silicon antifuse structures
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US5764563A (en) * 1996-09-30 1998-06-09 Vlsi Technology, Inc. Thin film load structure
KR100227843B1 (ko) * 1997-01-22 1999-11-01 윤종용 반도체 소자의 콘택 배선 방법 및 이를 이용한 커패시터 제조방법
US5937281A (en) * 1997-08-05 1999-08-10 Powerchip Semiconductor, Corp. Method to form metal-to-metal antifuse for field programmable gate array applications using liquid phase deposition (LPD)
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US5933744A (en) * 1998-04-02 1999-08-03 Taiwan Semiconductor Manufacturing Co., Ltd. Alignment method for used in chemical mechanical polishing process
US6037233A (en) * 1998-04-27 2000-03-14 Lsi Logic Corporation Metal-encapsulated polysilicon gate and interconnect
US6469364B1 (en) * 1998-08-31 2002-10-22 Arizona Board Of Regents Programmable interconnection system for electrical circuits
US6162686A (en) * 1998-09-18 2000-12-19 Taiwan Semiconductor Manufacturing Company Method for forming a fuse in integrated circuit application
JP3466929B2 (ja) * 1998-10-05 2003-11-17 株式会社東芝 半導体装置
US7157314B2 (en) 1998-11-16 2007-01-02 Sandisk Corporation Vertically stacked field programmable nonvolatile memory and method of fabrication
US6351406B1 (en) 1998-11-16 2002-02-26 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6385074B1 (en) 1998-11-16 2002-05-07 Matrix Semiconductor, Inc. Integrated circuit structure including three-dimensional memory array
US6034882A (en) 1998-11-16 2000-03-07 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6380003B1 (en) 1999-12-22 2002-04-30 International Business Machines Corporation Damascene anti-fuse with slot via
US6251710B1 (en) * 2000-04-27 2001-06-26 International Business Machines Corporation Method of making a dual damascene anti-fuse with via before wire
US8575719B2 (en) 2000-04-28 2013-11-05 Sandisk 3D Llc Silicon nitride antifuse for use in diode-antifuse memory arrays
US6631085B2 (en) 2000-04-28 2003-10-07 Matrix Semiconductor, Inc. Three-dimensional memory array incorporating serial chain diode stack
US6420215B1 (en) 2000-04-28 2002-07-16 Matrix Semiconductor, Inc. Three-dimensional memory array and method of fabrication
AU2001262953A1 (en) 2000-04-28 2001-11-12 Matrix Semiconductor, Inc. Three-dimensional memory array and method of fabrication
US6888750B2 (en) * 2000-04-28 2005-05-03 Matrix Semiconductor, Inc. Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication
US6765813B2 (en) * 2000-08-14 2004-07-20 Matrix Semiconductor, Inc. Integrated systems using vertically-stacked three-dimensional memory cells
EP1312120A1 (en) 2000-08-14 2003-05-21 Matrix Semiconductor, Inc. Dense arrays and charge storage devices, and methods for making same
US6658438B1 (en) * 2000-08-14 2003-12-02 Matrix Semiconductor, Inc. Method for deleting stored digital data from write-once memory device
US6515888B2 (en) 2000-08-14 2003-02-04 Matrix Semiconductor, Inc. Low cost three-dimensional memory array
US6711043B2 (en) 2000-08-14 2004-03-23 Matrix Semiconductor, Inc. Three-dimensional memory cache system
US6580124B1 (en) 2000-08-14 2003-06-17 Matrix Semiconductor Inc. Multigate semiconductor device with vertical channel current and method of fabrication
US6545891B1 (en) 2000-08-14 2003-04-08 Matrix Semiconductor, Inc. Modular memory device
US6424581B1 (en) 2000-08-14 2002-07-23 Matrix Semiconductor, Inc. Write-once memory array controller, system, and method
US6661730B1 (en) 2000-12-22 2003-12-09 Matrix Semiconductor, Inc. Partial selection of passive element memory cell sub-arrays for write operation
US7087975B2 (en) * 2000-12-28 2006-08-08 Infineon Technologies Ag Area efficient stacking of antifuses in semiconductor device
US6545898B1 (en) 2001-03-21 2003-04-08 Silicon Valley Bank Method and apparatus for writing memory arrays using external source of high programming voltage
US6897514B2 (en) * 2001-03-28 2005-05-24 Matrix Semiconductor, Inc. Two mask floating gate EEPROM and method of making
JP3511172B2 (ja) * 2001-03-30 2004-03-29 富士通カンタムデバイス株式会社 高周波半導体装置
US6704235B2 (en) 2001-07-30 2004-03-09 Matrix Semiconductor, Inc. Anti-fuse memory cell with asymmetric breakdown voltage
US6525953B1 (en) 2001-08-13 2003-02-25 Matrix Semiconductor, Inc. Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication
US6841813B2 (en) * 2001-08-13 2005-01-11 Matrix Semiconductor, Inc. TFT mask ROM and method for making same
US6593624B2 (en) 2001-09-25 2003-07-15 Matrix Semiconductor, Inc. Thin film transistors with vertically offset drain regions
US6580144B2 (en) * 2001-09-28 2003-06-17 Hewlett-Packard Development Company, L.P. One time programmable fuse/anti-fuse combination based memory cell
US7067850B2 (en) * 2001-10-16 2006-06-27 Midwest Research Institute Stacked switchable element and diode combination
US6624485B2 (en) 2001-11-05 2003-09-23 Matrix Semiconductor, Inc. Three-dimensional, mask-programmed read only memory
US6853049B2 (en) * 2002-03-13 2005-02-08 Matrix Semiconductor, Inc. Silicide-silicon oxide-semiconductor antifuse device and method of making
US6917532B2 (en) * 2002-06-21 2005-07-12 Hewlett-Packard Development Company, L.P. Memory storage device with segmented column line array
US6737675B2 (en) 2002-06-27 2004-05-18 Matrix Semiconductor, Inc. High density 3D rail stack arrays
KR100878496B1 (ko) 2002-12-30 2009-01-13 주식회사 하이닉스반도체 반도체 장치 및 그 제조방법
US7177183B2 (en) 2003-09-30 2007-02-13 Sandisk 3D Llc Multiple twin cell non-volatile memory array and logic block structure and method therefor
US7323761B2 (en) * 2004-11-12 2008-01-29 International Business Machines Corporation Antifuse structure having an integrated heating element
US7420242B2 (en) * 2005-08-31 2008-09-02 Macronix International Co., Ltd. Stacked bit line dual word line nonvolatile memory
US20070145594A1 (en) * 2005-12-28 2007-06-28 Dongbu Electronics Co., Ltd. Semiconductor device and method for manufacturing the same
KR100950750B1 (ko) 2006-11-23 2010-04-05 주식회사 하이닉스반도체 반도체 소자의 퓨즈 박스
US7608538B2 (en) * 2007-01-05 2009-10-27 International Business Machines Corporation Formation of vertical devices by electroplating
JP5248170B2 (ja) * 2008-04-03 2013-07-31 ルネサスエレクトロニクス株式会社 半導体装置
US7642176B2 (en) * 2008-04-21 2010-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. Electrical fuse structure and method
US9741658B2 (en) 2009-10-30 2017-08-22 Taiwan Semiconductor Manufacturing Company, Ltd. Electrical fuse structure and method of formation
DE102010045073B4 (de) 2009-10-30 2021-04-22 Taiwan Semiconductor Mfg. Co., Ltd. Elektrische Sicherungsstruktur
US8686536B2 (en) * 2009-10-30 2014-04-01 Taiwan Semiconductor Manufacturing Company, Ltd. Electrical fuse structure and method of formation
US9627395B2 (en) 2015-02-11 2017-04-18 Sandisk Technologies Llc Enhanced channel mobility three-dimensional memory structure and method of making thereof
US9478495B1 (en) 2015-10-26 2016-10-25 Sandisk Technologies Llc Three dimensional memory device containing aluminum source contact via structure and method of making thereof
CN115692372A (zh) * 2021-07-27 2023-02-03 中国电子科技集团公司第五十八研究所 一种反熔丝单元结构、制备方法及电极结构的制备方法

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US5191241A (en) * 1990-08-01 1993-03-02 Actel Corporation Programmable interconnect architecture
US5106773A (en) * 1990-10-09 1992-04-21 Texas Instruments Incorporated Programmable gate array and methods for its fabrication
JPH0714024B2 (ja) * 1990-11-29 1995-02-15 川崎製鉄株式会社 マルチチップモジュール
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WO1993005514A1 (en) * 1991-09-04 1993-03-18 Vlsi Technology, Inc. Anti-fuse structures and methods for making same
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JPH06242678A (ja) * 1992-06-19 1994-09-02 Canon Inc 画像形成装置
US5248632A (en) * 1992-09-29 1993-09-28 Texas Instruments Incorporated Method of forming an antifuse
US5341043A (en) * 1992-09-30 1994-08-23 Actel Corporation Series linear antifuse array
US5308795A (en) * 1992-11-04 1994-05-03 Actel Corporation Above via metal-to-metal antifuse

Also Published As

Publication number Publication date
US5565703A (en) 1996-10-15
WO1995011524A1 (en) 1995-04-27
US5427979A (en) 1995-06-27
IL111308A (en) 1997-07-13
IL111308A0 (en) 1994-12-29

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