TW262592B - Process of flash memory cell - Google Patents

Process of flash memory cell

Info

Publication number
TW262592B
TW262592B TW83104385A TW83104385A TW262592B TW 262592 B TW262592 B TW 262592B TW 83104385 A TW83104385 A TW 83104385A TW 83104385 A TW83104385 A TW 83104385A TW 262592 B TW262592 B TW 262592B
Authority
TW
Taiwan
Prior art keywords
channel region
forming
memory cell
flash memory
confining
Prior art date
Application number
TW83104385A
Other languages
English (en)
Inventor
Yau-Kae Hsu
Yeun-Ding Horng
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW83104385A priority Critical patent/TW262592B/zh
Application granted granted Critical
Publication of TW262592B publication Critical patent/TW262592B/zh

Links

Landscapes

  • Non-Volatile Memory (AREA)
TW83104385A 1994-05-16 1994-05-16 Process of flash memory cell TW262592B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW83104385A TW262592B (en) 1994-05-16 1994-05-16 Process of flash memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW83104385A TW262592B (en) 1994-05-16 1994-05-16 Process of flash memory cell

Publications (1)

Publication Number Publication Date
TW262592B true TW262592B (en) 1995-11-11

Family

ID=51401996

Family Applications (1)

Application Number Title Priority Date Filing Date
TW83104385A TW262592B (en) 1994-05-16 1994-05-16 Process of flash memory cell

Country Status (1)

Country Link
TW (1) TW262592B (zh)

Similar Documents

Publication Publication Date Title
US6268625B1 (en) Trench-type thin film transistor
TW331034B (en) Flash EEPROM device and manufacturing method thereof
KR940027104A (ko) 트랜지스터 제조방법
KR960024604A (ko) 이중 채널 박막트랜지스터 및 그 제조방법
TW288205B (en) Process of fabricating high-density flat cell mask read only memory
TW349273B (en) Fabrication method of semiconductor device containing N- and P-channel MOSFETS
TW262592B (en) Process of flash memory cell
KR100215891B1 (ko) 마스크 롬 코딩방법
JPS5764965A (en) Semiconductor device
JPS5575238A (en) Method of fabricating semiconductor device
JPS5783059A (en) Manufacture of mos type semiconductor device
KR950021134A (ko) 반도체소자의 콘택 형성방법
KR930008884B1 (ko) 스택커패시터 셀 제조방법
TW288199B (en) Process of fabricating lightly doped drain with inverse-T-shaped gate
JPS5530873A (en) High withstand field-effect transistor of mis type
JPS55121680A (en) Manufacture of semiconductor device
KR0124486B1 (en) Making method of semiconductor device having self-aligned contact
KR970003744B1 (en) Semiconductor device
TW242701B (en) Fabricating method for flash memory cell
JPS57113281A (en) Manufacture of semiconductor memory device
TW289862B (en) High-density mask ROM device and process thereof
TW239234B (en) Process of DRAM
TW270234B (en) Manufacturing process for lightly doped drain transistor device
KR970077357A (ko) 모스(mos) 트랜지스터의 제조방법
KR970052316A (ko) 반도체 장치의 콘택구조 및 그 형성방법