TW270234B - Manufacturing process for lightly doped drain transistor device - Google Patents

Manufacturing process for lightly doped drain transistor device

Info

Publication number
TW270234B
TW270234B TW84105774A TW84105774A TW270234B TW 270234 B TW270234 B TW 270234B TW 84105774 A TW84105774 A TW 84105774A TW 84105774 A TW84105774 A TW 84105774A TW 270234 B TW270234 B TW 270234B
Authority
TW
Taiwan
Prior art keywords
insulation
trench
forming
lightly doped
gate
Prior art date
Application number
TW84105774A
Other languages
Chinese (zh)
Inventor
Huoo-Tiee Lu
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW84105774A priority Critical patent/TW270234B/en
Application granted granted Critical
Publication of TW270234B publication Critical patent/TW270234B/en

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

A manufacturing process for lightly doped drain transistor device, that is applicable to one substrate, comprises: forming the first insulation on the substrate, then performing the first ion implantation procedure in order to adjust threshold voltage of channel; forming the second insulation and the third insulation on the above first insulation in sequence; by lithographic process defining gate area pattern to expose designated gate area; through etching procedure etching the first insulation to the third insulation in order to make the above exposed gate area present one inverse-T trench; forming one gate oxide on substrate surface of the trench; forming one conducting layer on gate area of the above inverse-T trench and the third insulation; with conducting layer of the trench's two sides and the third insulation as mask, performing anti-punchthrough second ion implantation procedure; filling conducting material in trench above the above gate oxide, and generating one inverse-T gate electrode after etching back; removing the third insulation; removing the second insulation; with upper half part of the above gate electrode as mask, performing the third ion implantation procedure in order to form lightly doped source/drain and heavily doped source/drain simultaneously.
TW84105774A 1995-06-07 1995-06-07 Manufacturing process for lightly doped drain transistor device TW270234B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW84105774A TW270234B (en) 1995-06-07 1995-06-07 Manufacturing process for lightly doped drain transistor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW84105774A TW270234B (en) 1995-06-07 1995-06-07 Manufacturing process for lightly doped drain transistor device

Publications (1)

Publication Number Publication Date
TW270234B true TW270234B (en) 1996-02-11

Family

ID=51396992

Family Applications (1)

Application Number Title Priority Date Filing Date
TW84105774A TW270234B (en) 1995-06-07 1995-06-07 Manufacturing process for lightly doped drain transistor device

Country Status (1)

Country Link
TW (1) TW270234B (en)

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