TW257872B - - Google Patents

Info

Publication number
TW257872B
TW257872B TW083105399A TW83105399A TW257872B TW 257872 B TW257872 B TW 257872B TW 083105399 A TW083105399 A TW 083105399A TW 83105399 A TW83105399 A TW 83105399A TW 257872 B TW257872 B TW 257872B
Authority
TW
Taiwan
Application number
TW083105399A
Other languages
Chinese (zh)
Original Assignee
Tokyo Electron Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP13385693A external-priority patent/JP3306677B2/ja
Priority claimed from JP13915393A external-priority patent/JP3315197B2/ja
Application filed by Tokyo Electron Co Ltd filed Critical Tokyo Electron Co Ltd
Application granted granted Critical
Publication of TW257872B publication Critical patent/TW257872B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/24—Arrangements for measuring quantities of charge

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
TW083105399A 1993-05-12 1994-06-15 TW257872B (en:Method)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13385693A JP3306677B2 (ja) 1993-05-12 1993-05-12 自己バイアス測定方法及び装置並びに静電吸着装置
JP13915393A JP3315197B2 (ja) 1993-05-17 1993-05-17 プラズマ処理方法

Publications (1)

Publication Number Publication Date
TW257872B true TW257872B (en:Method) 1995-09-21

Family

ID=26468107

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083105399A TW257872B (en:Method) 1993-05-12 1994-06-15

Country Status (3)

Country Link
US (1) US5557215A (en:Method)
KR (1) KR100281935B1 (en:Method)
TW (1) TW257872B (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8636873B2 (en) 2007-03-19 2014-01-28 Tokyo Electron Limited Plasma processing apparatus and structure therein

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JP3163973B2 (ja) * 1996-03-26 2001-05-08 日本電気株式会社 半導体ウエハ・チャック装置及び半導体ウエハの剥離方法
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US5737175A (en) * 1996-06-19 1998-04-07 Lam Research Corporation Bias-tracking D.C. power circuit for an electrostatic chuck
US5793192A (en) * 1996-06-28 1998-08-11 Lam Research Corporation Methods and apparatuses for clamping and declamping a semiconductor wafer in a wafer processing system
US5737177A (en) * 1996-10-17 1998-04-07 Applied Materials, Inc. Apparatus and method for actively controlling the DC potential of a cathode pedestal
US5904779A (en) * 1996-12-19 1999-05-18 Lam Research Corporation Wafer electrical discharge control by wafer lifter system
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US6255601B1 (en) * 1997-04-01 2001-07-03 Applied Materials, Inc. Conductive feedthrough for a ceramic body and method of fabricating same
US5894400A (en) * 1997-05-29 1999-04-13 Wj Semiconductor Equipment Group, Inc. Method and apparatus for clamping a substrate
US6356097B1 (en) 1997-06-20 2002-03-12 Applied Materials, Inc. Capacitive probe for in situ measurement of wafer DC bias voltage
US5942889A (en) * 1997-06-20 1999-08-24 Applied Materials, Inc. Capacitive probe for in situ measurement of wafer DC bias voltage
US5933314A (en) * 1997-06-27 1999-08-03 Lam Research Corp. Method and an apparatus for offsetting plasma bias voltage in bi-polar electro-static chucks
US6744346B1 (en) * 1998-02-27 2004-06-01 Micron Technology, Inc. Electronic device workpieces, methods of semiconductor processing and methods of sensing temperature of an electronic device workpiece
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US6198616B1 (en) * 1998-04-03 2001-03-06 Applied Materials, Inc. Method and apparatus for supplying a chucking voltage to an electrostatic chuck within a semiconductor wafer processing system
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JP2000258495A (ja) * 1999-03-12 2000-09-22 Oki Electric Ind Co Ltd 半導体デバイス試験装置
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JP4394778B2 (ja) * 1999-09-22 2010-01-06 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
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JP4590031B2 (ja) * 2000-07-26 2010-12-01 東京エレクトロン株式会社 被処理体の載置機構
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US6853953B2 (en) 2001-08-07 2005-02-08 Tokyo Electron Limited Method for characterizing the performance of an electrostatic chuck
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US6991699B2 (en) * 2002-02-05 2006-01-31 Lg.Philips Lcd Co., Ltd. LCD bonding machine and method for fabricating LCD by using the same
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JP4323232B2 (ja) * 2002-12-04 2009-09-02 芝浦メカトロニクス株式会社 静電吸着方法、静電吸着装置及び貼り合せ装置
TWI304158B (en) * 2003-01-15 2008-12-11 Asml Netherlands Bv Detection assembly and lithographic projection apparatus provided with such a detection assembly
JP4387125B2 (ja) * 2003-06-09 2009-12-16 東京エレクトロン株式会社 検査方法及び検査装置
JP4416569B2 (ja) * 2004-05-24 2010-02-17 キヤノン株式会社 堆積膜形成方法および堆積膜形成装置
JP2006100763A (ja) * 2004-09-06 2006-04-13 Fuji Photo Film Co Ltd 固体撮像装置の製造方法及び接合装置
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JP4468194B2 (ja) 2005-01-28 2010-05-26 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
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JP5094002B2 (ja) * 2005-09-06 2012-12-12 ルネサスエレクトロニクス株式会社 プラズマ処理装置およびその異常放電抑止方法
CN100362644C (zh) * 2005-12-07 2008-01-16 北京北方微电子基地设备工艺研究中心有限责任公司 静电卡盘
JP4986459B2 (ja) * 2006-01-24 2012-07-25 ルネサスエレクトロニクス株式会社 半導体集積回路装置
JP4657949B2 (ja) * 2006-03-01 2011-03-23 株式会社日立ハイテクノロジーズ エッチング処理装置および自己バイアス電圧測定方法ならびにエッチング処理装置の監視方法
JP4935149B2 (ja) * 2006-03-30 2012-05-23 東京エレクトロン株式会社 プラズマ処理用の電極板及びプラズマ処理装置
KR101394337B1 (ko) * 2006-08-30 2014-05-13 엘아이지에이디피 주식회사 정전척
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TWI475594B (zh) 2008-05-19 2015-03-01 Entegris Inc 靜電夾頭
JP5361457B2 (ja) * 2009-03-06 2013-12-04 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置用の電極
JP5683822B2 (ja) * 2009-03-06 2015-03-11 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置用の電極
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CN105717337B (zh) * 2014-12-04 2018-08-17 中微半导体设备(上海)有限公司 直流偏压测量系统及方法与吸着力调整系统及方法
JP6655310B2 (ja) 2015-07-09 2020-02-26 株式会社日立ハイテクノロジーズ プラズマ処理装置
CN105206495B (zh) * 2015-08-17 2018-08-07 深圳市华星光电技术有限公司 干式蚀刻装置及阵列基板干式蚀刻去除静电方法
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CN118412315A (zh) * 2017-06-16 2024-07-30 周星工程股份有限公司 基板处理装置和用于真空的旋转电连接器
KR20250028527A (ko) * 2018-04-12 2025-02-28 에이에스엠엘 네델란즈 비.브이. 정전 클램프를 포함하는 장치 및 그 장치의 작동 방법
JP7241540B2 (ja) * 2018-12-28 2023-03-17 東京エレクトロン株式会社 測定方法及び測定治具
JP7426842B2 (ja) * 2020-02-12 2024-02-02 東京エレクトロン株式会社 ステージ装置、給電機構、および処理装置
WO2023275958A1 (ja) * 2021-06-28 2023-01-05 株式会社日立ハイテク 内壁部材の再生方法
US20250046582A1 (en) * 2022-05-23 2025-02-06 Hitachi High-Tech Corporation Regenerating method for inner member of plasma processing apparatus
CN119069332B (zh) * 2024-11-04 2025-03-04 中微半导体设备(上海)股份有限公司 防止下电极组件发生电弧放电的方法及等离子体处理设备

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JPH0730468B2 (ja) * 1988-06-09 1995-04-05 日電アネルバ株式会社 ドライエッチング装置
US5167748A (en) * 1990-09-06 1992-12-01 Charles Evans And Associates Plasma etching method and apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8636873B2 (en) 2007-03-19 2014-01-28 Tokyo Electron Limited Plasma processing apparatus and structure therein
TWI453815B (zh) * 2007-03-19 2014-09-21 Tokyo Electron Ltd Plasma processing device interior structure and plasma processing device

Also Published As

Publication number Publication date
KR100281935B1 (ko) 2001-03-02
KR940027054A (ko) 1994-12-10
US5557215A (en) 1996-09-17

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MM4A Annulment or lapse of patent due to non-payment of fees