TW240339B - Fabrication of EEPROM memory cell - Google Patents

Fabrication of EEPROM memory cell

Info

Publication number
TW240339B
TW240339B TW83107540A TW83107540A TW240339B TW 240339 B TW240339 B TW 240339B TW 83107540 A TW83107540 A TW 83107540A TW 83107540 A TW83107540 A TW 83107540A TW 240339 B TW240339 B TW 240339B
Authority
TW
Taiwan
Prior art keywords
gate
forming
layer
transistor
doping
Prior art date
Application number
TW83107540A
Other languages
English (en)
Inventor
Yeun-Ding Horng
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW83107540A priority Critical patent/TW240339B/zh
Application granted granted Critical
Publication of TW240339B publication Critical patent/TW240339B/zh

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  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
TW83107540A 1994-08-17 1994-08-17 Fabrication of EEPROM memory cell TW240339B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW83107540A TW240339B (en) 1994-08-17 1994-08-17 Fabrication of EEPROM memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW83107540A TW240339B (en) 1994-08-17 1994-08-17 Fabrication of EEPROM memory cell

Publications (1)

Publication Number Publication Date
TW240339B true TW240339B (en) 1995-02-11

Family

ID=51400865

Family Applications (1)

Application Number Title Priority Date Filing Date
TW83107540A TW240339B (en) 1994-08-17 1994-08-17 Fabrication of EEPROM memory cell

Country Status (1)

Country Link
TW (1) TW240339B (zh)

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