TW239897B - - Google Patents

Info

Publication number
TW239897B
TW239897B TW081106481A TW81106481A TW239897B TW 239897 B TW239897 B TW 239897B TW 081106481 A TW081106481 A TW 081106481A TW 81106481 A TW81106481 A TW 81106481A TW 239897 B TW239897 B TW 239897B
Authority
TW
Taiwan
Application number
TW081106481A
Other languages
Chinese (zh)
Original Assignee
Tokyo Electron Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3207408A external-priority patent/JP3054638B2/ja
Priority claimed from JP20740791A external-priority patent/JP3238933B2/ja
Priority claimed from JP20844491A external-priority patent/JP2971995B2/ja
Priority claimed from JP3208445A external-priority patent/JPH0529435A/ja
Application filed by Tokyo Electron Co Ltd filed Critical Tokyo Electron Co Ltd
Application granted granted Critical
Publication of TW239897B publication Critical patent/TW239897B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
TW081106481A 1991-07-23 1992-08-17 TW239897B (OSRAM)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP3207408A JP3054638B2 (ja) 1991-07-23 1991-07-23 マグネトロンプラズマ処理装置
JP20740791A JP3238933B2 (ja) 1991-07-23 1991-07-23 マグネトロンプラズマ処理方法
JP20740991 1991-07-23
JP20844491A JP2971995B2 (ja) 1991-07-24 1991-07-24 搬送装置
JP3208445A JPH0529435A (ja) 1991-07-24 1991-07-24 搬送装置

Publications (1)

Publication Number Publication Date
TW239897B true TW239897B (OSRAM) 1995-02-01

Family

ID=27529430

Family Applications (1)

Application Number Title Priority Date Filing Date
TW081106481A TW239897B (OSRAM) 1991-07-23 1992-08-17

Country Status (5)

Country Link
US (1) US5271788A (OSRAM)
EP (1) EP0525633B1 (OSRAM)
KR (1) KR100297358B1 (OSRAM)
DE (1) DE69231479T2 (OSRAM)
TW (1) TW239897B (OSRAM)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6074512A (en) * 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US6165311A (en) 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6063233A (en) 1991-06-27 2000-05-16 Applied Materials, Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
JP3172758B2 (ja) * 1993-11-20 2001-06-04 東京エレクトロン株式会社 プラズマエッチング方法
JP2659919B2 (ja) * 1994-01-13 1997-09-30 インターナショナル・ビジネス・マシーンズ・コーポレイション プラズマの不均一性を補正するプラズマ装置
JP3124204B2 (ja) * 1994-02-28 2001-01-15 株式会社東芝 プラズマ処理装置
US5639334A (en) * 1995-03-07 1997-06-17 International Business Machines Corporation Uniform gas flow arrangements
DE19532100A1 (de) * 1995-08-30 1997-03-06 Leybold Ag Vorrichtung zur Plasmabehandlung von Substraten
TW279240B (en) 1995-08-30 1996-06-21 Applied Materials Inc Parallel-plate icp source/rf bias electrode head
US5891348A (en) * 1996-01-26 1999-04-06 Applied Materials, Inc. Process gas focusing apparatus and method
US5748434A (en) * 1996-06-14 1998-05-05 Applied Materials, Inc. Shield for an electrostatic chuck
US6284093B1 (en) 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
US6113731A (en) * 1997-01-02 2000-09-05 Applied Materials, Inc. Magnetically-enhanced plasma chamber with non-uniform magnetic field
US5976309A (en) * 1996-12-17 1999-11-02 Lsi Logic Corporation Electrode assembly for plasma reactor
BE1011098A3 (fr) * 1997-04-10 1999-04-06 Cockerill Rech & Dev Procede et dispositif de decapage.
JP4602545B2 (ja) * 1997-09-16 2010-12-22 アプライド マテリアルズ インコーポレイテッド プラズマチャンバの半導体ワークピース用シュラウド
US6074488A (en) * 1997-09-16 2000-06-13 Applied Materials, Inc Plasma chamber support having an electrically coupled collar ring
US6039836A (en) * 1997-12-19 2000-03-21 Lam Research Corporation Focus rings
US6165910A (en) * 1997-12-29 2000-12-26 Lam Research Corporation Self-aligned contacts for semiconductor device
US6579421B1 (en) 1999-01-07 2003-06-17 Applied Materials, Inc. Transverse magnetic field for ionized sputter deposition
US6344105B1 (en) * 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
JP4394778B2 (ja) * 1999-09-22 2010-01-06 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US6494958B1 (en) 2000-06-29 2002-12-17 Applied Materials Inc. Plasma chamber support with coupled electrode
US6872281B1 (en) * 2000-09-28 2005-03-29 Lam Research Corporation Chamber configuration for confining a plasma
JP2002261147A (ja) * 2001-03-02 2002-09-13 Seiko Instruments Inc 真空装置および搬送装置
US6554954B2 (en) 2001-04-03 2003-04-29 Applied Materials Inc. Conductive collar surrounding semiconductor workpiece in plasma chamber
TWI246873B (en) * 2001-07-10 2006-01-01 Tokyo Electron Ltd Plasma processing device
JP2003100713A (ja) * 2001-09-26 2003-04-04 Kawasaki Microelectronics Kk プラズマ電極用カバー
WO2004095529A2 (en) * 2003-03-21 2004-11-04 Tokyo Electron Limited Method and apparatus for reducing substrate backside deposition during processing
US20050103274A1 (en) * 2003-11-14 2005-05-19 Cheng-Tsung Yu Reliability assessment system and method
KR101218114B1 (ko) 2005-08-04 2013-01-18 주성엔지니어링(주) 플라즈마 식각 장치
CN114137803B (zh) 2016-12-02 2024-12-17 Asml荷兰有限公司 改变蚀刻参数的方法
US11702748B2 (en) 2017-03-03 2023-07-18 Lam Research Corporation Wafer level uniformity control in remote plasma film deposition

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51124379A (en) * 1975-04-23 1976-10-29 Fujitsu Ltd Plasma etching method
JPS5927213A (ja) * 1982-08-09 1984-02-13 Ichiro Ishii 上空より写真撮影や計測を行なう方法
US4581118A (en) * 1983-01-26 1986-04-08 Materials Research Corporation Shaped field magnetron electrode
JPS60120520A (ja) * 1983-12-02 1985-06-28 Canon Inc 半導体製造用搬送装置
US4891087A (en) * 1984-10-22 1990-01-02 Texas Instruments Incorporated Isolation substrate ring for plasma reactor
US4871420A (en) * 1984-12-18 1989-10-03 American Telephone And Telegraph Company, At&T Bell Laboratories Selective etching process
US4552369A (en) * 1984-12-24 1985-11-12 Gray Tool Company Stem sealing for high pressure valve
US4572759A (en) * 1984-12-26 1986-02-25 Benzing Technology, Inc. Troide plasma reactor with magnetic enhancement
EP0202904B1 (en) * 1985-05-20 1991-04-10 Tegal Corporation Plasma reactor with removable insert
US4793975A (en) * 1985-05-20 1988-12-27 Tegal Corporation Plasma Reactor with removable insert
JPS61278149A (ja) * 1985-06-03 1986-12-09 Canon Inc ウエハ位置決め装置
JPS6216167A (ja) * 1985-07-15 1987-01-24 Canon Inc プリンタ
JPS6221644A (ja) * 1985-07-22 1987-01-30 Canon Inc ウエハ搬送装置
JPS62150735A (ja) * 1985-12-25 1987-07-04 Canon Inc ウエハ搬送装置
KR910005733B1 (ko) * 1986-01-17 1991-08-02 가부시기가이샤 히다찌 세이사꾸쇼 플라즈마 처리방법 및 장치
JPS63224232A (ja) * 1987-03-13 1988-09-19 Hitachi Ltd プラズマ処理方法および装置
DE3854561T2 (de) * 1987-07-02 1996-05-02 Toshiba Kawasaki Kk Verfahren zum Trockenätzen.
JPH0618182B2 (ja) * 1987-08-05 1994-03-09 松下電器産業株式会社 ドライエッチング装置
JPH0730468B2 (ja) * 1988-06-09 1995-04-05 日電アネルバ株式会社 ドライエッチング装置
JP2892787B2 (ja) * 1990-07-20 1999-05-17 東京エレクトロン株式会社 電気信号の抽出方法

Also Published As

Publication number Publication date
DE69231479T2 (de) 2001-04-26
KR100297358B1 (ko) 2001-11-30
KR930003271A (ko) 1993-02-24
US5271788A (en) 1993-12-21
DE69231479D1 (de) 2000-11-02
EP0525633A1 (en) 1993-02-03
EP0525633B1 (en) 2000-09-27

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Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent