TW232097B - - Google Patents

Info

Publication number
TW232097B
TW232097B TW082109272A TW82109272A TW232097B TW 232097 B TW232097 B TW 232097B TW 082109272 A TW082109272 A TW 082109272A TW 82109272 A TW82109272 A TW 82109272A TW 232097 B TW232097 B TW 232097B
Authority
TW
Taiwan
Application number
TW082109272A
Other languages
Chinese (zh)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of TW232097B publication Critical patent/TW232097B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6892—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode having at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
    • H10D64/0133—

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
TW082109272A 1992-10-30 1993-11-05 TW232097B (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/968,736 US5910912A (en) 1992-10-30 1992-10-30 Flash EEPROM with dual-sidewall gate

Publications (1)

Publication Number Publication Date
TW232097B true TW232097B (OSRAM) 1994-10-11

Family

ID=25514692

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082109272A TW232097B (OSRAM) 1992-10-30 1993-11-05

Country Status (6)

Country Link
US (2) US5910912A (OSRAM)
EP (1) EP0667038A1 (OSRAM)
JP (1) JP2662173B2 (OSRAM)
KR (1) KR940704063A (OSRAM)
TW (1) TW232097B (OSRAM)
WO (1) WO1994010706A1 (OSRAM)

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US6838726B1 (en) * 2000-05-31 2005-01-04 Micron Technology, Inc. Horizontal memory devices with vertical gates
US6492231B2 (en) * 2000-06-09 2002-12-10 Winbond Electronics Corporation Method of making triple self-aligned split-gate non-volatile memory device
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US6518110B2 (en) * 2000-09-01 2003-02-11 Wen Ying Wen Method of fabricating memory cell structure of flash memory having annular floating gate
US6396108B1 (en) * 2000-11-13 2002-05-28 Advanced Micro Devices, Inc. Self-aligned double gate silicon-on-insulator (SOI) device
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US6611029B1 (en) * 2002-11-08 2003-08-26 Advanced Micro Devices, Inc. Double gate semiconductor device having separate gates
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US6962851B2 (en) * 2003-03-19 2005-11-08 Promos Technologies, Inc. Nonvolatile memories and methods of fabrication
US6962852B2 (en) * 2003-03-19 2005-11-08 Promos Technologies Inc. Nonvolatile memories and methods of fabrication
US6995060B2 (en) * 2003-03-19 2006-02-07 Promos Technologies Inc. Fabrication of integrated circuit elements in structures with protruding features
US6737700B1 (en) * 2003-05-13 2004-05-18 Powerchip Semiconductor Corp. Non-volatile memory cell structure and method for manufacturing thereof
US6902974B2 (en) * 2003-05-16 2005-06-07 Promos Technologies Inc. Fabrication of conductive gates for nonvolatile memories from layers with protruding portions
US6974739B2 (en) * 2003-05-16 2005-12-13 Promos Technologies Inc. Fabrication of dielectric on a gate surface to insulate the gate from another element of an integrated circuit
US7214585B2 (en) * 2003-05-16 2007-05-08 Promos Technologies Inc. Methods of fabricating integrated circuits with openings that allow electrical contact to conductive features having self-aligned edges
US6951782B2 (en) * 2003-07-30 2005-10-04 Promos Technologies, Inc. Nonvolatile memory cell with multiple floating gates formed after the select gate and having upward protrusions
US7052947B2 (en) * 2003-07-30 2006-05-30 Promos Technologies Inc. Fabrication of gate dielectric in nonvolatile memories in which a memory cell has multiple floating gates
US7101757B2 (en) * 2003-07-30 2006-09-05 Promos Technologies, Inc. Nonvolatile memory cells with buried channel transistors
US7169667B2 (en) * 2003-07-30 2007-01-30 Promos Technologies Inc. Nonvolatile memory cell with multiple floating gates formed after the select gate
US7060565B2 (en) * 2003-07-30 2006-06-13 Promos Technologies Inc. Fabrication of dielectric for a nonvolatile memory cell having multiple floating gates
KR100559994B1 (ko) 2003-08-08 2006-03-13 동부아남반도체 주식회사 측벽 방식을 이용한 플래시 메모리의 플로팅 게이트 형성방법
US7060627B2 (en) * 2003-09-09 2006-06-13 Tower Semiconductor Ltd. Method of decreasing charging effects in oxide-nitride-oxide (ONO) memory arrays
KR100526476B1 (ko) * 2003-12-31 2005-11-08 동부아남반도체 주식회사 스플릿 게이트형 플래쉬 메모리 소자의제조방법
US6852584B1 (en) * 2004-01-14 2005-02-08 Tokyo Electron Limited Method of trimming a gate electrode structure
US8217450B1 (en) 2004-02-03 2012-07-10 GlobalFoundries, Inc. Double-gate semiconductor device with gate contacts formed adjacent sidewalls of a fin
KR100585146B1 (ko) * 2004-06-15 2006-05-30 삼성전자주식회사 스플릿 게이트형 플래쉬 메모리 소자 및 그 제조 방법
US7259420B2 (en) * 2004-07-28 2007-08-21 International Business Machines Corporation Multiple-gate device with floating back gate
US7145802B2 (en) * 2004-08-31 2006-12-05 Skymedi Corporation Programming and manufacturing method for split gate memory cell
US7459772B2 (en) * 2004-09-29 2008-12-02 Actel Corporation Face-to-face bonded I/O circuit die and functional logic circuit die system
US7087952B2 (en) * 2004-11-01 2006-08-08 International Business Machines Corporation Dual function FinFET, finmemory and method of manufacture
KR100614644B1 (ko) * 2004-12-30 2006-08-22 삼성전자주식회사 비휘발성 기억소자, 그 제조방법 및 동작 방법
KR100683389B1 (ko) * 2005-09-20 2007-02-15 동부일렉트로닉스 주식회사 플래시 메모리의 셀 트랜지스터 및 그 제조 방법
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US9437603B2 (en) * 2014-10-10 2016-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Wing-type projection between neighboring access transistors in memory devices

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Also Published As

Publication number Publication date
KR940704063A (ko) 1994-12-12
US6107141A (en) 2000-08-22
JP2662173B2 (ja) 1997-10-08
JPH06204495A (ja) 1994-07-22
US5910912A (en) 1999-06-08
WO1994010706A1 (en) 1994-05-11
EP0667038A1 (en) 1995-08-16

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