TW230844B - - Google Patents

Info

Publication number
TW230844B
TW230844B TW082104683A TW82104683A TW230844B TW 230844 B TW230844 B TW 230844B TW 082104683 A TW082104683 A TW 082104683A TW 82104683 A TW82104683 A TW 82104683A TW 230844 B TW230844 B TW 230844B
Authority
TW
Taiwan
Application number
TW082104683A
Other languages
Chinese (zh)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of TW230844B publication Critical patent/TW230844B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
TW082104683A 1992-06-30 1993-06-12 TW230844B (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4221431A DE4221431A1 (de) 1992-06-30 1992-06-30 Herstellverfahren für einen Schlüsselkondensator

Publications (1)

Publication Number Publication Date
TW230844B true TW230844B (ja) 1994-09-21

Family

ID=6462140

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082104683A TW230844B (ja) 1992-06-30 1993-06-12

Country Status (6)

Country Link
EP (1) EP0647356A1 (ja)
JP (1) JPH07508136A (ja)
KR (1) KR950702339A (ja)
DE (1) DE4221431A1 (ja)
TW (1) TW230844B (ja)
WO (1) WO1994000874A1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5714779A (en) * 1992-06-30 1998-02-03 Siemens Aktiengesellschaft Semiconductor memory device having a transistor, a bit line, a word line and a stacked capacitor
DE4221432C2 (de) * 1992-06-30 1994-06-09 Siemens Ag Globales Planarisierungsverfahren für integrierte Halbleiterschaltungen oder mikromechanische Bauteile
KR950021710A (ko) * 1993-12-01 1995-07-26 김주용 반도체 장치의 캐패시터 제조방법
US5840623A (en) * 1995-10-04 1998-11-24 Advanced Micro Devices, Inc. Efficient and economical method of planarization of multilevel metallization structures in integrated circuits using CMP
JPH10144882A (ja) * 1996-11-13 1998-05-29 Oki Electric Ind Co Ltd 半導体記憶素子のキャパシタ及びその製造方法
WO1998028789A1 (fr) * 1996-12-20 1998-07-02 Hitachi, Ltd. Dispositif memoire a semi-conducteur et procede de fabrication associe
GB2322964B (en) * 1997-03-07 2001-10-17 United Microelectronics Corp Polysilicon CMP process for high-density DRAM cell structures

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2524862B2 (ja) * 1990-05-01 1996-08-14 三菱電機株式会社 半導体記憶装置およびその製造方法
US5162248A (en) * 1992-03-13 1992-11-10 Micron Technology, Inc. Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing

Also Published As

Publication number Publication date
JPH07508136A (ja) 1995-09-07
EP0647356A1 (de) 1995-04-12
DE4221431A1 (de) 1994-01-05
KR950702339A (ko) 1995-06-19
WO1994000874A1 (de) 1994-01-06

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