|
US5673750A
(en)
*
|
1990-05-19 |
1997-10-07 |
Hitachi, Ltd. |
Vacuum processing method and apparatus
|
|
KR0165898B1
(ko)
*
|
1990-07-02 |
1999-02-01 |
미다 가쓰시게 |
진공처리방법 및 장치
|
|
JPH0613196A
(ja)
*
|
1992-06-25 |
1994-01-21 |
Matsushita Electric Ind Co Ltd |
プラズマ発生方法および発生装置
|
|
US6242111B1
(en)
*
|
1992-09-17 |
2001-06-05 |
Applied Materials, Inc. |
Anodized aluminum susceptor for forming integrated circuit structures and method of making anodized aluminum susceptor
|
|
KR100294062B1
(ko)
*
|
1992-10-27 |
2001-10-24 |
조셉 제이. 스위니 |
웨이퍼 처리 챔버에서의 돔형 페데스탈용 클램프 링
|
|
US5427670A
(en)
*
|
1992-12-10 |
1995-06-27 |
U.S. Philips Corporation |
Device for the treatment of substrates at low temperature
|
|
JPH06188184A
(ja)
*
|
1992-12-21 |
1994-07-08 |
Nec Corp |
レジスト膜の加熱方法およびパターン形成方法
|
|
US5342476A
(en)
*
|
1993-01-21 |
1994-08-30 |
Vlsi Technology, Inc. |
Reduction of polycide residues through helium backside pressure control during dry etching
|
|
US5439524A
(en)
*
|
1993-04-05 |
1995-08-08 |
Vlsi Technology, Inc. |
Plasma processing apparatus
|
|
JPH0786247A
(ja)
*
|
1993-09-16 |
1995-03-31 |
Hitachi Ltd |
減圧雰囲気内における被処理物の処理方法及び処理装置
|
|
DE657918T1
(de)
*
|
1993-11-12 |
1996-02-29 |
Semiconductor Systems Inc |
Verfahren und Vorrichtung zum Einbrennen und Kühlen von Halbleiterscheiben und dergleichen.
|
|
JPH07249586A
(ja)
*
|
1993-12-22 |
1995-09-26 |
Tokyo Electron Ltd |
処理装置及びその製造方法並びに被処理体の処理方法
|
|
US5437757A
(en)
*
|
1994-01-21 |
1995-08-01 |
Applied Materials, Inc. |
Clamp ring for domed pedestal in wafer processing chamber
|
|
JPH07221076A
(ja)
*
|
1994-02-07 |
1995-08-18 |
Nec Corp |
エッチング方法及びこれに用いられる装置
|
|
JPH08130207A
(ja)
*
|
1994-10-31 |
1996-05-21 |
Matsushita Electric Ind Co Ltd |
プラズマ処理装置
|
|
JPH08148431A
(ja)
*
|
1994-11-24 |
1996-06-07 |
Mitsubishi Electric Corp |
Ｍｂｅ装置、及びガス分岐配管装置
|
|
US5605600A
(en)
*
|
1995-03-13 |
1997-02-25 |
International Business Machines Corporation |
Etch profile shaping through wafer temperature control
|
|
JPH0936198A
(ja)
*
|
1995-07-19 |
1997-02-07 |
Hitachi Ltd |
真空処理装置およびそれを用いた半導体製造ライン
|
|
US5609720A
(en)
*
|
1995-09-29 |
1997-03-11 |
Lam Research Corporation |
Thermal control of semiconductor wafer during reactive ion etching
|
|
US5894887A
(en)
*
|
1995-11-30 |
1999-04-20 |
Applied Materials, Inc. |
Ceramic dome temperature control using heat pipe structure and method
|
|
US5828070A
(en)
*
|
1996-02-16 |
1998-10-27 |
Eaton Corporation |
System and method for cooling workpieces processed by an ion implantation system
|
|
US5810933A
(en)
*
|
1996-02-16 |
1998-09-22 |
Novellus Systems, Inc. |
Wafer cooling device
|
|
GB2311651A
(en)
*
|
1996-03-27 |
1997-10-01 |
Surface Tech Sys Ltd |
Clamping device
|
|
JP3852980B2
(ja)
*
|
1996-05-21 |
2006-12-06 |
キヤノンアネルバ株式会社 |
薄膜作成方法及びスパッタリング装置
|
|
US6602348B1
(en)
|
1996-09-17 |
2003-08-05 |
Applied Materials, Inc. |
Substrate cooldown chamber
|
|
JPH10240356A
(ja)
|
1997-02-21 |
1998-09-11 |
Anelva Corp |
基板処理装置の基板温度制御法と基板温度制御性判定法
|
|
US6303045B1
(en)
*
|
1997-03-20 |
2001-10-16 |
Lam Research Corporation |
Methods and apparatus for etching a nitride layer in a variable-gap plasma processing chamber
|
|
US5830330A
(en)
*
|
1997-05-22 |
1998-11-03 |
Tokyo Electron Limited |
Method and apparatus for low pressure sputtering
|
|
US6054688A
(en)
*
|
1997-06-25 |
2000-04-25 |
Brooks Automation, Inc. |
Hybrid heater with ceramic foil serrated plate and gas assist
|
|
US6274459B1
(en)
|
1998-02-17 |
2001-08-14 |
Silicon Genesis Corporation |
Method for non mass selected ion implant profile control
|
|
JP3507331B2
(ja)
*
|
1998-05-20 |
2004-03-15 |
松下電器産業株式会社 |
基板温度制御方法及び装置
|
|
US6073577A
(en)
*
|
1998-06-30 |
2000-06-13 |
Lam Research Corporation |
Electrode for plasma processes and method for manufacture and use thereof
|
|
US6277235B1
(en)
*
|
1998-08-11 |
2001-08-21 |
Novellus Systems, Inc. |
In situ plasma clean gas injection
|
|
KR100408259B1
(ko)
*
|
1998-11-04 |
2004-01-24 |
엘지.필립스 엘시디 주식회사 |
공정챔버_
|
|
US6720261B1
(en)
*
|
1999-06-02 |
2004-04-13 |
Agere Systems Inc. |
Method and system for eliminating extrusions in semiconductor vias
|
|
US6458723B1
(en)
|
1999-06-24 |
2002-10-01 |
Silicon Genesis Corporation |
High temperature implant apparatus
|
|
US6228438B1
(en)
*
|
1999-08-10 |
2001-05-08 |
Unakis Balzers Aktiengesellschaft |
Plasma reactor for the treatment of large size substrates
|
|
JP2001127041A
(ja)
*
|
1999-10-26 |
2001-05-11 |
Matsushita Electric Ind Co Ltd |
基板のプラズマ処理装置およびプラズマ処理方法
|
|
US6391804B1
(en)
*
|
2000-06-09 |
2002-05-21 |
Primaxx, Inc. |
Method and apparatus for uniform direct radiant heating in a rapid thermal processing reactor
|
|
US6652655B1
(en)
*
|
2000-07-07 |
2003-11-25 |
Applied Materials, Inc. |
Method to isolate multi zone heater from atmosphere
|
|
US20020083897A1
(en)
*
|
2000-12-29 |
2002-07-04 |
Applied Materials, Inc. |
Full glass substrate deposition in plasma enhanced chemical vapor deposition
|
|
US20050061444A1
(en)
*
|
2003-09-24 |
2005-03-24 |
Yoshiaki Noda |
Plasma cleaning device
|
|
US8580585B2
(en)
*
|
2009-12-18 |
2013-11-12 |
Micrel, Inc. |
Method and system for controlled isotropic etching on a plurality of etch systems
|
|
JP5700806B2
(ja)
*
|
2011-03-04 |
2015-04-15 |
株式会社日立国際電気 |
基板支持台、基板処理装置及び半導体装置の製造方法
|
|
US9219051B2
(en)
*
|
2013-06-05 |
2015-12-22 |
Globalfoundries Inc. |
Laminate peripheral clamping to control microelectronic module BSM warpage
|
|
US9305894B2
(en)
|
2013-06-05 |
2016-04-05 |
Globalfoundries Inc. |
Constrained die adhesion cure process
|
|
CN103646840A
(zh)
*
|
2013-11-29 |
2014-03-19 |
上海华力微电子有限公司 |
用于离子注入机预冷腔的晶片固定装置
|
|
CN106298621A
(zh)
*
|
2015-05-28 |
2017-01-04 |
北京北方微电子基地设备工艺研究中心有限责任公司 |
机械卡盘及半导体加工设备
|
|
JP6533300B2
(ja)
*
|
2015-10-20 |
2019-06-19 |
三菱電機株式会社 |
太陽電池の製造方法および太陽電池製造装置
|
|
CN107403750B
(zh)
*
|
2016-05-20 |
2020-04-28 |
北京北方华创微电子装备有限公司 |
基座组件及反应腔室
|
|
US11232971B2
(en)
*
|
2019-12-18 |
2022-01-25 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Workpiece holding mechanism, process system and manufacturing method of semiconductor structure
|
|
CN111424260B
(zh)
*
|
2020-06-09 |
2020-09-11 |
上海陛通半导体能源科技股份有限公司 |
具有高效清洁能力的化学气相沉积设备及半导体工艺方法
|