TW202518520A - 電漿處理裝置 - Google Patents

電漿處理裝置 Download PDF

Info

Publication number
TW202518520A
TW202518520A TW114101797A TW114101797A TW202518520A TW 202518520 A TW202518520 A TW 202518520A TW 114101797 A TW114101797 A TW 114101797A TW 114101797 A TW114101797 A TW 114101797A TW 202518520 A TW202518520 A TW 202518520A
Authority
TW
Taiwan
Prior art keywords
heater
wafer
aforementioned
plasma processing
processing device
Prior art date
Application number
TW114101797A
Other languages
English (en)
Chinese (zh)
Inventor
堀川恭兵
一野貴雅
中谷信太郎
中本和則
田中優貴
Original Assignee
日商日立全球先端科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日立全球先端科技股份有限公司 filed Critical 日商日立全球先端科技股份有限公司
Publication of TW202518520A publication Critical patent/TW202518520A/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/40—Heating elements having the shape of rods or tubes
    • H05B3/54—Heating elements having the shape of rods or tubes flexible
    • H05B3/56—Heating cables
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
TW114101797A 2022-03-14 2023-02-17 電漿處理裝置 TW202518520A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/JP2022/011436 2022-03-14
PCT/JP2022/011436 WO2023175690A1 (ja) 2022-03-14 2022-03-14 プラズマ処理装置

Publications (1)

Publication Number Publication Date
TW202518520A true TW202518520A (zh) 2025-05-01

Family

ID=88022505

Family Applications (2)

Application Number Title Priority Date Filing Date
TW114101797A TW202518520A (zh) 2022-03-14 2023-02-17 電漿處理裝置
TW112105845A TWI873545B (zh) 2022-03-14 2023-02-17 電漿處理裝置

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW112105845A TWI873545B (zh) 2022-03-14 2023-02-17 電漿處理裝置

Country Status (6)

Country Link
US (1) US20240282555A1 (https=)
JP (1) JP7509997B2 (https=)
KR (1) KR102794111B1 (https=)
CN (1) CN117063617A (https=)
TW (2) TW202518520A (https=)
WO (1) WO2023175690A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250232962A1 (en) * 2023-03-27 2025-07-17 Hitachi High-Tech Corporation Plasma processing apparatus
JP7747091B2 (ja) * 2024-02-28 2025-10-01 Toto株式会社 静電チャック
JP7747092B2 (ja) * 2024-02-28 2025-10-01 Toto株式会社 静電チャック
JP7816402B2 (ja) * 2024-02-28 2026-02-18 Toto株式会社 静電チャック

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007067036A (ja) 2005-08-30 2007-03-15 Hitachi High-Technologies Corp 真空処理装置
US9324589B2 (en) 2012-02-28 2016-04-26 Lam Research Corporation Multiplexed heater array using AC drive for semiconductor processing
JP6276919B2 (ja) * 2013-02-01 2018-02-07 株式会社日立ハイテクノロジーズ プラズマ処理装置および試料台
US20150060013A1 (en) * 2013-09-05 2015-03-05 Applied Materials, Inc. Tunable temperature controlled electrostatic chuck assembly
US10217615B2 (en) * 2013-12-16 2019-02-26 Lam Research Corporation Plasma processing apparatus and component thereof including an optical fiber for determining a temperature thereof
CN107004626B (zh) * 2014-11-20 2019-02-05 住友大阪水泥股份有限公司 静电卡盘装置
JP2017028111A (ja) * 2015-07-23 2017-02-02 株式会社日立ハイテクノロジーズ プラズマ処理装置
US10582570B2 (en) * 2016-01-22 2020-03-03 Applied Materials, Inc. Sensor system for multi-zone electrostatic chuck
JP7158131B2 (ja) * 2017-05-30 2022-10-21 東京エレクトロン株式会社 ステージ及びプラズマ処理装置
JP6688763B2 (ja) * 2017-05-30 2020-04-28 東京エレクトロン株式会社 プラズマ処理方法
JP7292115B2 (ja) * 2019-06-07 2023-06-16 東京エレクトロン株式会社 温度調整装置及び温度制御方法。
JP7539236B2 (ja) * 2020-02-21 2024-08-23 東京エレクトロン株式会社 基板処理装置
JP7717717B2 (ja) * 2020-04-01 2025-08-04 ラム リサーチ コーポレーション 熱エッチングのための急速かつ正確な温度制御

Also Published As

Publication number Publication date
JPWO2023175690A1 (https=) 2023-09-21
KR20230135557A (ko) 2023-09-25
JP7509997B2 (ja) 2024-07-02
CN117063617A (zh) 2023-11-14
TWI873545B (zh) 2025-02-21
TW202336810A (zh) 2023-09-16
WO2023175690A1 (ja) 2023-09-21
KR102794111B1 (ko) 2025-04-14
US20240282555A1 (en) 2024-08-22

Similar Documents

Publication Publication Date Title
TWI873545B (zh) 電漿處理裝置
JP7364758B2 (ja) プラズマ処理方法
TWI469238B (zh) 電漿蝕刻處理裝置及電漿蝕刻處理方法
JP3150058B2 (ja) プラズマ処理装置及びプラズマ処理方法
JP7329131B2 (ja) プラズマ処理装置およびプラズマ処理方法
TW201929031A (zh) 製程中之超侷域化電漿與均勻性控制
JP3814176B2 (ja) プラズマ処理装置
TWI723406B (zh) 電漿處理裝置
JP7761728B2 (ja) プラズマ処理装置
KR102285126B1 (ko) 플라스마 처리 장치