JPWO2023175690A1 - - Google Patents
Info
- Publication number
- JPWO2023175690A1 JPWO2023175690A1 JP2023511853A JP2023511853A JPWO2023175690A1 JP WO2023175690 A1 JPWO2023175690 A1 JP WO2023175690A1 JP 2023511853 A JP2023511853 A JP 2023511853A JP 2023511853 A JP2023511853 A JP 2023511853A JP WO2023175690 A1 JPWO2023175690 A1 JP WO2023175690A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/40—Heating elements having the shape of rods or tubes
- H05B3/54—Heating elements having the shape of rods or tubes flexible
- H05B3/56—Heating cables
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0421—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0432—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0602—Temperature monitoring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
- H10P72/722—Details of electrostatic chucks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2022/011436 WO2023175690A1 (ja) | 2022-03-14 | 2022-03-14 | プラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023175690A1 true JPWO2023175690A1 (https=) | 2023-09-21 |
| JP7509997B2 JP7509997B2 (ja) | 2024-07-02 |
Family
ID=88022505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023511853A Active JP7509997B2 (ja) | 2022-03-14 | 2022-03-14 | プラズマ処理装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20240282555A1 (https=) |
| JP (1) | JP7509997B2 (https=) |
| KR (1) | KR102794111B1 (https=) |
| CN (1) | CN117063617A (https=) |
| TW (2) | TW202518520A (https=) |
| WO (1) | WO2023175690A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20250232962A1 (en) * | 2023-03-27 | 2025-07-17 | Hitachi High-Tech Corporation | Plasma processing apparatus |
| JP7747091B2 (ja) * | 2024-02-28 | 2025-10-01 | Toto株式会社 | 静電チャック |
| JP7747092B2 (ja) * | 2024-02-28 | 2025-10-01 | Toto株式会社 | 静電チャック |
| JP7816402B2 (ja) * | 2024-02-28 | 2026-02-18 | Toto株式会社 | 静電チャック |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014150160A (ja) * | 2013-02-01 | 2014-08-21 | Hitachi High-Technologies Corp | プラズマ処理装置および試料台 |
| JP2015515713A (ja) * | 2012-02-28 | 2015-05-28 | ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ | 半導体処理用の交流駆動を用いる多重ヒータアレイ |
| JP2017028111A (ja) * | 2015-07-23 | 2017-02-02 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| JP2017157855A (ja) * | 2014-11-20 | 2017-09-07 | 住友大阪セメント株式会社 | 静電チャック装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007067036A (ja) | 2005-08-30 | 2007-03-15 | Hitachi High-Technologies Corp | 真空処理装置 |
| US20150060013A1 (en) * | 2013-09-05 | 2015-03-05 | Applied Materials, Inc. | Tunable temperature controlled electrostatic chuck assembly |
| US10217615B2 (en) * | 2013-12-16 | 2019-02-26 | Lam Research Corporation | Plasma processing apparatus and component thereof including an optical fiber for determining a temperature thereof |
| US10582570B2 (en) * | 2016-01-22 | 2020-03-03 | Applied Materials, Inc. | Sensor system for multi-zone electrostatic chuck |
| JP7158131B2 (ja) * | 2017-05-30 | 2022-10-21 | 東京エレクトロン株式会社 | ステージ及びプラズマ処理装置 |
| JP6688763B2 (ja) * | 2017-05-30 | 2020-04-28 | 東京エレクトロン株式会社 | プラズマ処理方法 |
| JP7292115B2 (ja) * | 2019-06-07 | 2023-06-16 | 東京エレクトロン株式会社 | 温度調整装置及び温度制御方法。 |
| JP7539236B2 (ja) * | 2020-02-21 | 2024-08-23 | 東京エレクトロン株式会社 | 基板処理装置 |
| JP7717717B2 (ja) * | 2020-04-01 | 2025-08-04 | ラム リサーチ コーポレーション | 熱エッチングのための急速かつ正確な温度制御 |
-
2022
- 2022-03-14 JP JP2023511853A patent/JP7509997B2/ja active Active
- 2022-03-14 CN CN202280005615.6A patent/CN117063617A/zh active Pending
- 2022-03-14 KR KR1020237005509A patent/KR102794111B1/ko active Active
- 2022-03-14 WO PCT/JP2022/011436 patent/WO2023175690A1/ja not_active Ceased
- 2022-03-14 US US18/025,018 patent/US20240282555A1/en active Pending
-
2023
- 2023-02-17 TW TW114101797A patent/TW202518520A/zh unknown
- 2023-02-17 TW TW112105845A patent/TWI873545B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015515713A (ja) * | 2012-02-28 | 2015-05-28 | ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ | 半導体処理用の交流駆動を用いる多重ヒータアレイ |
| JP2014150160A (ja) * | 2013-02-01 | 2014-08-21 | Hitachi High-Technologies Corp | プラズマ処理装置および試料台 |
| JP2017157855A (ja) * | 2014-11-20 | 2017-09-07 | 住友大阪セメント株式会社 | 静電チャック装置 |
| JP2017028111A (ja) * | 2015-07-23 | 2017-02-02 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20230135557A (ko) | 2023-09-25 |
| JP7509997B2 (ja) | 2024-07-02 |
| CN117063617A (zh) | 2023-11-14 |
| TWI873545B (zh) | 2025-02-21 |
| TW202336810A (zh) | 2023-09-16 |
| WO2023175690A1 (ja) | 2023-09-21 |
| KR102794111B1 (ko) | 2025-04-14 |
| US20240282555A1 (en) | 2024-08-22 |
| TW202518520A (zh) | 2025-05-01 |
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