TW202511453A - 蝕刻液、蝕刻方法及半導體裝置之製造方法 - Google Patents

蝕刻液、蝕刻方法及半導體裝置之製造方法 Download PDF

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Publication number
TW202511453A
TW202511453A TW113124273A TW113124273A TW202511453A TW 202511453 A TW202511453 A TW 202511453A TW 113124273 A TW113124273 A TW 113124273A TW 113124273 A TW113124273 A TW 113124273A TW 202511453 A TW202511453 A TW 202511453A
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TW
Taiwan
Prior art keywords
etching solution
silicon
mass
etching
component
Prior art date
Application number
TW113124273A
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English (en)
Chinese (zh)
Inventor
安龍杰
笠井鉄夫
白江宏之
Original Assignee
日商三菱化學股份有限公司
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Application filed by 日商三菱化學股份有限公司 filed Critical 日商三菱化學股份有限公司
Publication of TW202511453A publication Critical patent/TW202511453A/zh

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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/01Manufacture or treatment
    • H10D30/019Manufacture or treatment of FETs having stacked nanowire, nanosheet or nanoribbon channels
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/01Manufacture or treatment
    • H10D30/021Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/60Wet etching
    • H10P50/64Wet etching of semiconductor materials
    • H10P50/642Chemical etching
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/69Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
TW113124273A 2023-06-28 2024-06-28 蝕刻液、蝕刻方法及半導體裝置之製造方法 TW202511453A (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2023-105666 2023-06-28
JP2023105665 2023-06-28
JP2023-105665 2023-06-28
JP2023-105662 2023-06-28
JP2023105666 2023-06-28
JP2023105662 2023-06-28

Publications (1)

Publication Number Publication Date
TW202511453A true TW202511453A (zh) 2025-03-16

Family

ID=93939238

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113124273A TW202511453A (zh) 2023-06-28 2024-06-28 蝕刻液、蝕刻方法及半導體裝置之製造方法

Country Status (4)

Country Link
JP (1) JPWO2025005205A1 (https=)
KR (1) KR20260027156A (https=)
TW (1) TW202511453A (https=)
WO (1) WO2025005205A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3081171B2 (ja) * 1996-08-12 2000-08-28 株式会社デンソー エッチング液及びエッチング加工方法
JP4975430B2 (ja) * 2006-12-28 2012-07-11 関東化学株式会社 異方性エッチング液およびそれを用いたエッチング方法
TWI683362B (zh) * 2018-12-17 2020-01-21 許富翔 矽鰭片結構的修整方法
JP2021012940A (ja) * 2019-07-05 2021-02-04 株式会社デンソー 半導体装置の製造方法
US11508828B2 (en) * 2020-07-06 2022-11-22 Applied Materials, Inc. Selective silicon etch for gate all around transistors
JP7765206B2 (ja) * 2021-06-24 2025-11-06 花王株式会社 シリコン用エッチング液

Also Published As

Publication number Publication date
JPWO2025005205A1 (https=) 2025-01-02
KR20260027156A (ko) 2026-02-27
WO2025005205A1 (ja) 2025-01-02

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