Classifications

• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
  • C09K13/00—Etching, surface-brightening or pickling compositions
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D30/00—Field-effect transistors [FET]
  • H10D30/01—Manufacture or treatment
  • H10D30/019—Manufacture or treatment of FETs having stacked nanowire, nanosheet or nanoribbon channels
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D30/00—Field-effect transistors [FET]
  • H10D30/01—Manufacture or treatment
  • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
  • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P50/00—Etching of wafers, substrates or parts of devices
  • H10P50/60—Wet etching
  • H10P50/64—Wet etching of semiconductor materials
  • H10P50/642—Chemical etching
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P50/00—Etching of wafers, substrates or parts of devices
  • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
  • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials

Definitions

• the present invention relates to an etching solution, an etching method, and a method for manufacturing semiconductor devices.
• a nanosheet or nanowire-like channel is covered with a gate electrode, increasing the contact area between the channel and gate electrode, thereby improving the transistor performance per unit area.
• VFETs have a structure in which nanosheet or nanowire-like channels are stacked vertically, making the area of the standard cell layout smaller than that of a planar transistor (HFET), thereby improving the transistor performance per unit area.
• HFET planar transistor
• Patent Documents 1 and 2 disclose etching solutions that contain alkaline compounds as etching solutions that dissolve silicon.
• Patent Documents 1 and 2 are inferior in selectively dissolving the 110 face of a silicon crystal compared to the 100 face of a silicon crystal.
• an etching solution containing an alkaline compound (A) and at least one compound (B) selected from the group consisting of an oxidizing agent (B1) and a cationic surfactant (B2) has excellent selective solubility of the 110 face of a silicon crystal relative to the 100 face of a silicon crystal, thereby completing the present invention.
• an etching solution containing an alkyl ammonium hydroxide (A1) having an alkyl group with 10 or more carbon atoms has excellent selective solubility of the 110 face of a silicon crystal relative to the 100 face of a silicon crystal, leading to the completion of the present invention.
• the gist of the present invention is as follows.
• An etching solution comprising an alkaline compound (A), and at least one compound (B) selected from the group consisting of an oxidizing agent (B1) and a cationic surfactant (B2), wherein ER 110 /ER 100 >1.
• the ER 110 is the etching rate for the 110 plane of a silicon crystal
• the ER 100 is the etching rate for the 100 plane of a silicon crystal.
• [5] The etching solution according to any one of [1] to [4], wherein the cationic surfactant (B2) contains at least one compound selected from the group consisting of an alkyl group-containing quaternary ammonium compound, a pyridinium ring-containing quaternary ammonium compound, a pyrrolidinium ring-containing quaternary ammonium compound, and a piperidinium ring-containing quaternary ammonium compound.
• [7] The etching solution according to [6], wherein the water content in 100% by mass of the etching solution is 60% by mass or more.
• ER111 is the etching rate for the 111 plane of silicon crystal.
• a method for manufacturing a semiconductor device comprising the step of etching a silicon-containing structure using the etching solution according to any one of [1] to [14].
• a method for manufacturing a vertical transistor comprising the step of etching a silicon-containing structure using the etching solution according to any one of [1] to [14].
• a method for manufacturing a gate-all-around transistor comprising the step of etching a silicon-containing structure using the etching solution according to any one of [1] to [14].
• a method for etching a silicon-containing structure comprising the steps of: An etching method comprising the step of selectively etching a (110) plane of a silicon crystal relative to a (100) plane of a silicon crystal, using an etching solution containing an alkaline compound (A) and at least one compound (B) selected from the group consisting of an oxidizing agent (B1) and a cationic surfactant (B2).
• a method for manufacturing a semiconductor device comprising a step of selectively etching a (110) plane of a silicon crystal relative to a (100) plane of the silicon crystal, using an etching solution containing an alkaline compound (A) and at least one compound (B) selected from the group consisting of an oxidizing agent (B1) and a cationic surfactant (B2).
• the etching solution of the present invention is excellent in selectively dissolving the 110 plane of a silicon crystal relative to the 100 plane of a silicon crystal.
• the etching method of the present invention, the semiconductor device manufacturing method of the present invention, the vertical transistor manufacturing method of the present invention, and the gate-all-around transistor manufacturing method of the present invention have excellent selective solubility of the 110 plane of a silicon crystal relative to the 100 plane of a silicon crystal in the etching step, and therefore can perform highly accurate etching to manufacture desired products with good yields.
• the etching solution of the present invention contains an alkaline compound (A) and at least one compound (B) selected from the group consisting of an oxidizing agent (B1) and a cationic surfactant (B2) (hereinafter, sometimes referred to as "component (B)").
• component (B) a cationic surfactant
• the etching solution of the present invention preferably further contains water (hereinafter, sometimes referred to as "component (C)").
• component (C) water
• silicon crystal is etched using the etching solution of the present invention
• silicon is dissolved by component (A) and is partially oxidized by component (B1) to form silicon oxide.
• the dissolution rate of silicon by component (A) depends on the surface ratio of partially oxidized silicon oxide, and the higher the surface ratio of silicon oxide, the slower it becomes.
• partial oxidation of silicon by component (B1) is more likely to occur on the 100 face of silicon crystal than on the 110 face of silicon crystal.
• the etching solution of the present invention has excellent selective solubility of the 110 face of silicon crystal relative to the 100 face of silicon crystal.
• component (B2) adsorbs and protects the Si-OH on the surface of the silicon crystal through ionic bonds, suppressing dissolution of silicon.
• Component (B2) is more likely to adsorb and protect the surface of the silicon crystal on the 100 plane than on the 110 plane.
• Component (B2) is more likely to accelerate silicon dissolution on the 110 plane than on the 100 plane.
• the etching solution of the present invention is superior in selective solubility of the 110 plane of silicon crystal relative to the 100 plane of silicon crystal.
• the etching solution of the present invention contains, as component (A), an alkylammonium hydroxide (A1) having an alkyl group having 10 or more carbon atoms (hereinafter, sometimes referred to as “component (A1)”), and is therefore excellent in selective solubility of the 110 face of a silicon crystal relative to the 100 face of a silicon crystal.
• the etching solution of the present invention preferably further contains water (hereinafter, sometimes referred to as "component (C)").
• component (C) water
• the silicon is dissolved by the component (A1) and the surface of the silicon crystal is adsorbed and protected.
• the surface of the silicon crystal is more easily adsorbed and protected by the component (A1) on the 100 plane than on the 110 plane.
• the etching solution of the present invention has excellent selective solubility of the 110 plane of silicon crystal relative to the 100 plane of silicon crystal.
• the component (A) is an alkaline compound (A).
• the etching liquid of the present invention contains the alkaline compound (A)
• the etching liquid has excellent silicon solubility.
• Component (A) includes, for example, organic alkali compounds such as quaternary ammonium hydroxide compounds, such as tetramethylammonium hydroxide, tetraethylammonium hydroxide, and tetrabutylammonium hydroxide; and inorganic alkali compounds such as metal hydroxides, such as sodium hydroxide, potassium hydroxide, and calcium hydroxide.
• organic alkali compounds such as quaternary ammonium hydroxide compounds, such as tetramethylammonium hydroxide, tetraethylammonium hydroxide, and tetrabutylammonium hydroxide
• inorganic alkali compounds such as metal hydroxides, such as sodium hydroxide, potassium hydroxide, and calcium hydroxide.
• quaternary ammonium hydroxide compounds potassium hydroxide, and calcium hydroxide are preferred, since they have a low content of sodium, which is likely to affect transistor performance, and quaternary ammonium hydroxide compounds are more preferred, and tetramethylammonium hydroxide and tetrabutylammonium hydroxide are even more preferred.
• the content of component (A) is preferably 0.1 mass % or more, more preferably 0.2 mass % or more, and even more preferably 0.5 mass % or more, in 100 mass % of the etching solution, because component (A) has excellent silicon solubility. Because of its excellent solubility in water, the content of the component (A) is preferably 39.99% by mass or less, more preferably 34.95% by mass or less, and even more preferably 29.92% by mass or less, in 100% by mass of the etching solution.
• the compound (B) is at least one selected from the group consisting of an oxidizing agent (B1) and a cationic surfactant (B2).
• the etching solution of the present invention contains an oxidizing agent (B1), thereby promoting partial oxidation of silicon. Furthermore, since the etching solution of the present invention contains the cationic surfactant (B2) of the present invention, it has excellent selective adsorption properties for the 100 plane and selective solubility for the 110 plane of silicon crystal.
• oxidizing agent (B1) examples include hydrogen peroxide, peroxodisulfuric acid or its salts, chlorous acid or its salts, bromic acid or its salts, chromic acid or its salts, perchloric acid or its salts, and nitric acid or its salts. These components (B1) may be used alone or in combination of two or more. Among these components (B1), hydrogen peroxide, peroxodisulfuric acid or its salts, and chromic acid or its salts are preferred because they produce fewer dangerous reaction products, hydrogen peroxide, peroxodisulfuric acid or its salts are more preferred, and hydrogen peroxide is even more preferred.
• the content of the oxidizing agent (B1) is preferably 0.01 mass % or more, more preferably 0.05 mass % or more, and even more preferably 0.08 mass % or more, in 100 mass % of the etching solution, because the oxidizing agent (B1) promotes partial oxidation of silicon.
• the content of the oxidizing agent (B1) is preferably 5 mass % or less, more preferably 3 mass % or less, and even more preferably 2 mass % or less, in 100 mass % of the etching solution, in order to suppress complete oxidation of silicon.
• the cationic surfactant (B2) is preferably a quaternary ammonium compound, more preferably an alkyl group-containing quaternary ammonium compound, a pyridinium ring-containing quaternary ammonium compound, a pyrrolidinium ring-containing quaternary ammonium compound, or a piperidinium ring-containing quaternary ammonium compound, and even more preferably an alkyl group-containing quaternary ammonium compound, because they have excellent solubility in water.
• the cationic surfactant (B2) does not include the alkaline compound (A).
• Examples of cationic surfactants (B2) include hexadecyltrimethylammonium bromide, octadecyltrimethylammonium bromide, didecyldimethylammonium bromide, dioctadecyldimethylammonium bromide, tetrabutylammonium bromide, tetradecylammonium bromide, benzyldimethylstearylammonium chloride, hexadecylpyridinium chloride, 1-methyl-1-octylpyrrolidinium chloride, and the like. These components (B2) may be used alone or in combination of two or more.
• hexadecyltrimethylammonium bromide, octadecyltrimethylammonium bromide, and didecyldimethylammonium bromide are preferred because of their excellent solubility in water, hexadecyltrimethylammonium bromide and octadecyltrimethylammonium bromide are more preferred, and hexadecyltrimethylammonium bromide is even more preferred.
• the content of the cationic surfactant (B2) is preferably 0.01 mass% or more, more preferably 0.05 mass% or more, and even more preferably 0.08 mass% or more, in 100 mass% of the etching solution, because the cationic surfactant (B2) has excellent selective adsorption properties for the 100 plane and selective solubility for the 110 plane of the silicon crystal. Because the component (B2) has excellent solubility in water, the content of the component (B2) is preferably 5% by mass or less, more preferably 3% by mass or less, even more preferably 2% by mass or less, and particularly preferably 1% by mass or less, in 100% by mass of the etching solution.
• the etching solution of the present invention preferably contains water (component (C)) in addition to the components (A) and (B).
• the content of the component (C) is preferably 60% by mass or more, more preferably 65% by mass or more, and even more preferably 70% by mass or more, in 100% by mass of the etching solution, because the etching solution is easy to produce and the solubility of the components (A) and (B) is excellent. Because the component (C) has excellent silicon solubility, the content of the component (C) is preferably 99.5% by mass or less, more preferably 98% by mass or less, and even more preferably 95% by mass or less, in 100% by mass of the etching solution.
• the etching solution of the present invention may contain other components in addition to the components (A), (B), and (C) as long as the effects of the present invention are not impaired. However, there may be cases in which the etching solution does not contain any components other than the components (A), (B), and (C). For example, the content of other components may be 0.001% by mass or less in 100% by mass of the etching solution. In other cases, the etching solution may be substantially free of other components. An etching solution that is substantially free of other components means that the content of other components in 100% by mass of the etching solution is 0% by mass to 0.00001% by mass. Examples of other components that may be contained include a chelating agent, a water-miscible solvent, a thiol compound, a nonionic surfactant, a cationic surfactant, and an anionic surfactant.
• the etching solution of the present invention contains a chelating agent, which exerts a chelating effect on the adsorption of silicon to each crystal surface.
• chelating agents examples include amine compounds, amino acids, and organic acids. These chelating agents may be used alone or in combination of two or more. Among these chelating agents, amine compounds, amino acids, and organic acids are preferred because of their excellent chelating effect, and amine compounds are more preferred.
• amine compounds include ethylenediamine, 1,3-diaminopropane, 1,4-diaminobutane, ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, triethylenetetraaminehexaacetic acid, diethylenetriaminepentakis(methylphosphonic acid), ethylenediamine-N,N'-bis[2-(2-hydroxyphenyl)acetic acid], N,N'-bis(3-aminopropane)ethylenediamine, N-methyl-1,3-diaminopropane, 2-aminoethanol, N-methyldiethanolamine, 2-amino-2-methyl-1-propanol, etc.
• amine compounds may be used alone or in combination of two or more.
• amino acids examples include glycine, arginine, histidine, (2-dihydroxyethyl)glycine, etc. These amino acids may be used alone or in combination of two or more. Among these amino acids, glycine, arginine, histidine, and (2-dihydroxyethyl)glycine are preferred, and (2-dihydroxyethyl)glycine is more preferred, due to their excellent chelating effect.
• organic acids examples include oxalic acid, citric acid, tartaric acid, malic acid, and 2-phosphonobutane-1,2,4-tricarboxylic acid. These organic acids may be used alone or in combination of two or more. Among these organic acids, oxalic acid, citric acid, tartaric acid, malic acid, and 2-phosphonobutane-1,2,4-tricarboxylic acid are preferred because of their excellent chelating effect, and citric acid and 2-phosphonobutane-1,2,4-tricarboxylic acid are more preferred.
• the content of the chelating agent is preferably 0.001 mass% or more, more preferably 0.005 mass% or more, and even more preferably 0.01 mass% or more, in terms of excellent chelating effect, based on 100 mass% of the etching solution.
• the content of the chelating agent is preferably 25 mass% or less, more preferably 10 mass% or less, and even more preferably 6 mass% or less, in 100 mass% of the etching solution, because the chelating agent has excellent solubility in water.
• the etching solution of the present invention contains a water-miscible solvent, which has the effect of making hydrophobic substances that are not miscible with water miscible with water.
• the water-miscible solvent may be any solvent having excellent solubility in water, and is preferably a solvent having a solubility parameter (SP value) of 7.0 (cal/cm 3 ) 1/2 or more, more preferably 9.0 (cal/cm 3 ) 1/2 or more.
• SP value solubility parameter
• water-miscible solvents examples include polar protic solvents such as isopropanol, ethylene glycol, propylene glycol, methanol, ethanol, propanol, butanol, glycerol, and 2-(2-aminoethoxy)ethanol; polar aprotic solvents such as acetone, dimethyl sulfoxide, N,N-dimethylformamide, N-methylpyrrolidone, and acetonitrile; and non-polar solvents such as hexane, benzene, toluene, and diethyl ether. These water-miscible solvents may be used alone or in combination of two or more.
• polar protic solvents such as isopropanol, ethylene glycol, propylene glycol, methanol, ethanol, propanol, butanol, glycerol, and 2-(2-aminoethoxy)ethanol
• polar aprotic solvents such as acetone,
• the content of the water-miscible solvent is preferably 5% by mass or less, more preferably 1% by mass or less, based on 100% by mass of the etching solution, and most preferably does not contain any water-miscible solvent.
• the mass ratio of component (B) to component (A) in the etching solution of the present invention is preferably 2 or less, more preferably 1 or less, and even more preferably 0.5 or less, because in the case of the oxidizing agent (B1), the balance between the solubility of silicon and the partial oxidation of silicon is excellent, and in the case of the cationic surfactant (B2), the balance between the solubility of silicon and the selective adsorption of the 100-face of the silicon crystal is excellent. From the same viewpoint, it is preferably 0.003 or more, more preferably 0.005 or more, and even more preferably 0.01 or more. It is also preferably 0.003 to 2, more preferably 0.005 to 1, and even more preferably 0.01 to 0.5.
• the mass ratio of component (A) to component (C) is preferably 0.001 to 0.7, more preferably 0.003 to 0.6, and even more preferably 0.005 to 0.5, since this provides excellent silicon solubility.
• the mass ratio of component (B) to component (C) is preferably 0.0001 to 0.08, more preferably 0.0005 to 0.03, and even more preferably 0.001 to 0.01, because the oxidizing agent (B1) is excellent in partial oxidation of silicon, and the cationic surfactant (B2) is excellent in selective adsorption of the 100 plane and selective dissolution of the 110 plane of silicon crystal.
• the component (A1) is an alkylammonium hydroxide (A1) having an alkyl group having 10 or more carbon atoms.
• the etching solution of the present invention has excellent selective adsorption properties for the 100-face of silicon crystal.
• Component (A1) is preferably an alkylammonium hydroxide having an alkyl group with 12 to 20 carbon atoms, and more preferably an alkylammonium hydroxide having an alkyl group with 14 to 18 carbon atoms, because these have excellent adsorption stability on the silicon crystal surface.
• component (A1) examples include hexadecyltrimethylammonium hydroxide, octadecyltrimethylammonium hydroxide, didodecyldimethylammonium hydroxide, and tetradecylammonium hydroxide. These components (A1) may be used alone or in combination of two or more.
• hexadecyltrimethylammonium hydroxide, octadecyltrimethylammonium hydroxide, and didodecyldimethylammonium hydroxide are preferred because of their excellent solubility in water, hexadecyltrimethylammonium hydroxide and octadecyltrimethylammonium hydroxide are more preferred, and hexadecyltrimethylammonium hydroxide is even more preferred.
• the content of the component (A1) is preferably 0.1 mass % or more, more preferably 0.2 mass % or more, and even more preferably 0.5 mass % or more, in 100 mass % of the etching solution. Because the component (A1) has excellent solubility in water, the content of the component (A1) is preferably 40% by mass or less, more preferably 35% by mass or less, and even more preferably 30% by mass or less, in 100% by mass of the etching solution.
• the etching solution of the present invention preferably contains water (component (C)) in addition to the component (A1).
• the content of the component (C) is preferably 60% by mass or more, more preferably 65% by mass or more, and even more preferably 70% by mass or more, in 100% by mass of the etching solution, because the etching solution is easy to produce and the solubility of the component (A1) is excellent. Because the component (C) has excellent silicon solubility, the content of the component (C) is preferably 99.9 mass % or less, more preferably 99.8 mass % or less, and even more preferably 99.5 mass % or less, in 100 mass % of the etching solution.
• the etching solution of the present invention may contain other components in addition to the component (A1) and the component (C) as long as the effects of the present invention are not impaired. However, there may be cases in which the etching solution does not contain any components other than the component (A1) and the component (C). For example, the content of other components may be 0.001% by mass or less in 100% by mass of the etching solution. In other cases, the etching solution may be substantially free of other components. An etching solution that is substantially free of other components means that the content of other components in 100% by mass of the etching solution is 0% by mass to 0.00001% by mass.
• Examples of other components that may be contained include a chelating agent, a water-miscible solvent, an oxidizing agent, a thiol compound, a nonionic surfactant, a cationic surfactant, and an anionic surfactant.
• the etching solution of the present invention contains a chelating agent, which exerts a chelating effect on the adsorption of silicon to each crystal surface.
• Examples of the chelating agent include amine compounds, amino acids, organic acids, etc. These chelating agents may be used alone or in combination of two or more. Among these chelating agents, amine compounds, amino acids, and organic acids are preferred, and amine compounds are more preferred, because they have excellent chelating effects. Examples of the chelating agent include those similar to those described in the first embodiment.
• the content of the chelating agent is preferably 0.001 mass% or more, more preferably 0.005 mass% or more, and even more preferably 0.01 mass% or more, in terms of excellent chelating effect, based on 100 mass% of the etching solution.
• the content of the chelating agent is preferably 25 mass% or less, more preferably 10 mass% or less, and even more preferably 6 mass% or less, in 100 mass% of the etching solution, because the chelating agent has excellent solubility in water.
• the etching solution of the present invention contains a water-miscible solvent, which exerts the effect of making a hydrophobic substance that is not miscible with water miscible with water.
• a water-miscible solvent examples include those described in the first embodiment, and the water-miscible solvent is used in the same manner and at the same content as those described in the first embodiment.
• the mass ratio of component (A1) to component (C) is preferably 0.001 to 0.7, more preferably 0.003 to 0.6, and even more preferably 0.005 to 0.5, in view of excellent silicon solubility.
• the method for producing the etching solution of the first aspect of the present invention is not particularly limited, and the etching solution can be produced by mixing component (A), component (B), and, as necessary, component (C) and other components.
• the method for producing the etching solution of the second aspect of the present invention is not particularly limited, and the etching solution can be produced by mixing the component (A1) and, if necessary, the component (C) and other components.
• the order of mixing is not particularly limited, and all of the components may be mixed at once, or some of the components may be mixed in advance and then the remaining components may be mixed.
• the pH of the etching solution of the present invention is preferably 8 to 14, more preferably 9 to 14, and even more preferably 10 to 14, in view of excellent silicon solubility.
• the etching rate ER110 for the 110 plane of the silicon crystal is preferably 1 nm/min or more, more preferably 1.5 nm/min or more, and even more preferably 2 nm/min or more, because this provides excellent efficiency in forming nanostructures in the horizontal direction.
• the etching rate ER110 for the 110 plane of silicon crystal is preferably 10 nm/min or more, more preferably 20 nm/min or more, and even more preferably 30 nm/min or more, because this provides excellent efficiency in forming nanostructures in the horizontal direction.
• the etching rate ER 110 for the 110 plane of the silicon crystal is preferably 10 nm/min or more, more preferably 50 nm/min or more, and even more preferably 100 nm/min or more, because this provides excellent efficiency in forming nanostructures in the horizontal direction.
• the etching rate ER100 for the 100 plane of the silicon crystal is preferably 50 nm/min or less, more preferably 30 nm/min or less, and even more preferably 10 nm/min or less, because the efficiency of forming a nano-shape in the horizontal direction is excellent.
• the etching rate ER100 for the 100-plane of the silicon crystal is preferably 200 nm/min or less, more preferably 100 nm/min or less, and even more preferably 50 nm/min or less, because the efficiency of forming a nano-shape in the horizontal direction is excellent.
• the etching rate ER 100 for the 100 plane of the silicon crystal is preferably 300 nm/min or less, more preferably 200 nm/min or less, and even more preferably 100 nm/min or less, because this provides excellent efficiency in forming nanostructures in the horizontal direction.
• the etching rate ER111 for the 111 plane of the silicon crystal is excellent in forming a flat facet of the 110 plane of the silicon crystal, and is therefore preferably 0.5 nm/min or more, more preferably 1.0 nm/min or more, and even more preferably 1.5 nm/min or more.
• the selective solubility of the 110 face of the silicon crystal relative to the 100 face of the silicon crystal is greater than 1, preferably 1.1 to 10, more preferably 1.2 to 7, and even more preferably 1.3 to 5, since the silicon crystal has excellent melt processability in the horizontal direction.
• the selective solubility of the 111 plane of a silicon crystal relative to the 110 plane of a silicon crystal is preferably 0.3 or more, more preferably 0.4 to 5, and even more preferably 0.5 to 3, since the flatness of the 110 plane of the silicon crystal is excellent.
• etching rate and selective solubility are measured by the method described in the Examples below.
• the etching solution of the present invention has excellent selective solubility for the 110 face of a silicon crystal relative to the 100 face of a silicon crystal, and is therefore suitable as an etching solution for dissolving silicon, and is particularly suitable as an etching solution for dissolving the 110 face of a silicon crystal relative to the 100 face of a silicon crystal.
• the silicon to be etched is preferably single crystal silicon because it has a crystal plane orientation.
• Single crystal silicon can be produced by known methods, and may be produced by cutting a single crystal ingot or by epitaxial growth.
• the etching method of the present invention is a method for etching a silicon-containing structure using the etching solution of the present invention.
• the silicon in the silicon-containing structure has a crystal plane orientation, and is therefore preferably single crystal silicon.
• Single crystal silicon can be produced by known methods, and may be produced by cutting a single crystal ingot or by epitaxial growth.
• the silicon-containing structure may also contain a substance other than silicon.
• substances other than silicon include silicon germanium, silicon oxide, silicon nitride, silicon carbonitride, etc.
• a known etching method can be used, such as a batch method or a single wafer method.
• the temperature during etching is preferably 15° C. or higher, and more preferably 20° C. or higher, since this can improve the etching rate.
• the temperature during etching is preferably 100° C. or less, and more preferably 80° C. or less, in order to suppress damage to the substrate and provide excellent etching stability.
• the temperature during etching corresponds to the temperature of the etching solution during etching.
• the etching solution of the present invention has excellent selective solubility for the 110 face of a silicon crystal relative to the 100 face of a silicon crystal, and is therefore suitable as an etching solution for dissolving silicon, and is particularly suitable as an etching solution for dissolving the 110 face of a silicon crystal relative to the 100 face of a silicon crystal. Therefore, the etching liquid of the present invention is suitable for etching a semiconductor device having a silicon-containing structure, is more suitable for a vertical transistor having a silicon-containing structure and a gate-all-around transistor having a silicon-containing structure, and is particularly suitable for a vertical transistor having a silicon-containing structure.
• a silicon substrate having silicon crystals with 110 and 100 plane orientations was immersed in a 0.5 mass% hydrofluoric acid aqueous solution for 3 minutes, and then rinsed with ultrapure water.
• the back surface of the silicon substrate was then masked, and the silicon substrate was immersed in the etching solutions obtained in the Examples and Comparative Examples at 60°C for 10 to 60 minutes.
• the film thickness of the silicon substrate before and after immersion was measured with a spectroscopic interference film thickness meter, and the selective solubility of the 110 plane of the silicon crystal relative to the 100 plane of the silicon crystal was calculated using the following formulas (1) to (3).
• ER 110 [nm/min] (film thickness of silicon substrate before immersion [nm] ⁇ film thickness of silicon substrate after immersion [nm]) ⁇ (immersion time [min]) (1)
• ER 100 [nm/min] (film thickness of silicon substrate before immersion [nm] ⁇ film thickness of silicon substrate after immersion [nm]) ⁇ (immersion time [min]) (2)
• Selective solubility ER 110 [nm/min] ⁇ ER 100 [nm/min] (3)
• a silicon substrate having silicon crystals with 111 and 110 plane orientations was immersed in a 0.5 mass% hydrofluoric acid aqueous solution for 3 minutes, and then rinsed with ultrapure water.
• the back surface of the silicon substrate was then masked, and the silicon substrate was immersed in the etching solutions obtained in the Examples and Comparative Examples at 60°C for 10 to 60 minutes.
• the film thickness of the silicon substrate before and after immersion was measured with a spectroscopic interference film thickness meter, and the selective solubility of the 111 plane of the silicon crystal relative to the 110 plane of the silicon crystal was calculated using the following formulas (4) to (6).
• Component (A-1) Potassium hydroxide Component (A-2): Tetramethylammonium hydroxide Component (A-3): Tetrabutylammonium hydroxide Component (B1-1): Hydrogen peroxide
• Example 1-1 The components were mixed so that the etching solution contained 0.56 mass% of component (A-1), 0.10 mass% of component (B1-1), and the remainder water in 100 mass% of the etching solution, and nitrogen gas was bubbled through the mixture for 5 minutes to obtain an etching solution.
• the evaluation results of the obtained etching solutions are shown in Table 1.
• Examples 1-2 to 1-4 Etching solutions were obtained in the same manner as in Example 1-1, except that the types and contents of the components of the etching solution were changed as shown in Table 1. The evaluation results of the obtained etching solutions are shown in Table 1.
• the etching solution obtained in the examples was remarkably superior in selective dissolution of the 110 plane of silicon crystal relative to the 100 plane of silicon crystal, and the selective dissolution of the 111 plane of silicon crystal relative to the 110 plane of silicon crystal was also improved.
• the etching solution obtained in the comparative example was inferior in selective dissolution of the 110 plane of silicon crystal relative to the 100 plane of silicon crystal, and in selective dissolution of the 111 plane of silicon crystal relative to the 110 plane of silicon crystal.
• Component (A-1) Potassium hydroxide Component (A-2): Tetramethylammonium hydroxide Component (A-3): Tetrabutylammonium hydroxide Component (B2-1): Hexadecyltrimethylammonium bromide Component (B2-2): Octadecyltrimethylammonium bromide Component (B2-3): Didecyldimethylammonium bromide Component (B2-4): Dioctadecyldimethylammonium bromide
• Example 2-1 The components were mixed so that the etching solution contained 0.56 mass% of component (A-1), 1.0 mass% of component (B2-1), and the remainder water, based on 100 mass% of the etching solution, and nitrogen gas was bubbled through the mixture for 5 minutes to obtain an etching solution.
• the evaluation results of the obtained etching solutions are shown in Table 2.
• Example 2-2 to 2-8 Etching solutions were obtained in the same manner as in Example 2-1, except that the types and contents of the components of the etching solution were changed as shown in Table 2. The evaluation results of the obtained etching solutions are shown in Table 2.
• the etching solutions obtained in the examples were remarkably superior in selective dissolution of the 110 plane of silicon crystal relative to the 100 plane of silicon crystal.
• the etching solution obtained in the comparative example was inferior in selective dissolution of the 110 plane of the silicon crystal relative to the 100 plane of the silicon crystal.
• Example 3-1 The components were mixed so that the etching solution was 100% by mass, with 3.02% by mass of component (A1-1) and the remainder being water, and nitrogen gas was bubbled through the mixture for 5 minutes to obtain an etching solution.
• the evaluation results of the obtained etching solutions are shown in Table 3.
• the etching solutions obtained in the examples were remarkably superior in selective dissolution of the 110 plane of silicon crystal relative to the 100 plane of silicon crystal.
• the etching solution obtained in the comparative example was inferior in selective dissolution of the 110 plane of the silicon crystal relative to the 100 plane of the silicon crystal.
• the etching solution of the present invention has excellent selective solubility for the 110 face of a silicon crystal relative to the 100 face of a silicon crystal, and is therefore suitable as an etching solution for dissolving silicon, and is particularly suitable as an etching solution for dissolving the 110 face of a silicon crystal relative to the 100 face of a silicon crystal. Therefore, the etching liquid of the present invention is suitable for etching a semiconductor device having a silicon-containing structure, is more suitable for a vertical transistor having a silicon-containing structure and a gate-all-around transistor having a silicon-containing structure, and is particularly suitable for a vertical transistor having a silicon-containing structure.

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