JPWO2025005205A1 - - Google Patents

Info

Publication number
JPWO2025005205A1
JPWO2025005205A1 JP2025530207A JP2025530207A JPWO2025005205A1 JP WO2025005205 A1 JPWO2025005205 A1 JP WO2025005205A1 JP 2025530207 A JP2025530207 A JP 2025530207A JP 2025530207 A JP2025530207 A JP 2025530207A JP WO2025005205 A1 JPWO2025005205 A1 JP WO2025005205A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025530207A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2025005205A1 publication Critical patent/JPWO2025005205A1/ja
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/01Manufacture or treatment
    • H10D30/019Manufacture or treatment of FETs having stacked nanowire, nanosheet or nanoribbon channels
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/01Manufacture or treatment
    • H10D30/021Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/60Wet etching
    • H10P50/64Wet etching of semiconductor materials
    • H10P50/642Chemical etching
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/69Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
JP2025530207A 2023-06-28 2024-06-27 Pending JPWO2025005205A1 (https=)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2023105665 2023-06-28
JP2023105666 2023-06-28
JP2023105662 2023-06-28
PCT/JP2024/023437 WO2025005205A1 (ja) 2023-06-28 2024-06-27 エッチング液、エッチング方法及び半導体デバイスの製造方法

Publications (1)

Publication Number Publication Date
JPWO2025005205A1 true JPWO2025005205A1 (https=) 2025-01-02

Family

ID=93939238

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025530207A Pending JPWO2025005205A1 (https=) 2023-06-28 2024-06-27

Country Status (4)

Country Link
JP (1) JPWO2025005205A1 (https=)
KR (1) KR20260027156A (https=)
TW (1) TW202511453A (https=)
WO (1) WO2025005205A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3081171B2 (ja) * 1996-08-12 2000-08-28 株式会社デンソー エッチング液及びエッチング加工方法
JP4975430B2 (ja) * 2006-12-28 2012-07-11 関東化学株式会社 異方性エッチング液およびそれを用いたエッチング方法
TWI683362B (zh) * 2018-12-17 2020-01-21 許富翔 矽鰭片結構的修整方法
JP2021012940A (ja) * 2019-07-05 2021-02-04 株式会社デンソー 半導体装置の製造方法
US11508828B2 (en) * 2020-07-06 2022-11-22 Applied Materials, Inc. Selective silicon etch for gate all around transistors
JP7765206B2 (ja) * 2021-06-24 2025-11-06 花王株式会社 シリコン用エッチング液

Also Published As

Publication number Publication date
KR20260027156A (ko) 2026-02-27
TW202511453A (zh) 2025-03-16
WO2025005205A1 (ja) 2025-01-02

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