KR20260027156A - 에칭액, 에칭 방법 및 반도체 디바이스의 제조 방법 - Google Patents
에칭액, 에칭 방법 및 반도체 디바이스의 제조 방법Info
- Publication number
- KR20260027156A KR20260027156A KR1020257041995A KR20257041995A KR20260027156A KR 20260027156 A KR20260027156 A KR 20260027156A KR 1020257041995 A KR1020257041995 A KR 1020257041995A KR 20257041995 A KR20257041995 A KR 20257041995A KR 20260027156 A KR20260027156 A KR 20260027156A
- Authority
- KR
- South Korea
- Prior art keywords
- etching solution
- etching
- silicon
- mass
- silicon crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/019—Manufacture or treatment of FETs having stacked nanowire, nanosheet or nanoribbon channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/64—Wet etching of semiconductor materials
- H10P50/642—Chemical etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2023-105662 | 2023-06-28 | ||
| JP2023105665 | 2023-06-28 | ||
| JPJP-P-2023-105665 | 2023-06-28 | ||
| JP2023105666 | 2023-06-28 | ||
| JP2023105662 | 2023-06-28 | ||
| JPJP-P-2023-105666 | 2023-06-28 | ||
| PCT/JP2024/023437 WO2025005205A1 (ja) | 2023-06-28 | 2024-06-27 | エッチング液、エッチング方法及び半導体デバイスの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20260027156A true KR20260027156A (ko) | 2026-02-27 |
Family
ID=93939238
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020257041995A Pending KR20260027156A (ko) | 2023-06-28 | 2024-06-27 | 에칭액, 에칭 방법 및 반도체 디바이스의 제조 방법 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPWO2025005205A1 (https=) |
| KR (1) | KR20260027156A (https=) |
| TW (1) | TW202511453A (https=) |
| WO (1) | WO2025005205A1 (https=) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3081171B2 (ja) * | 1996-08-12 | 2000-08-28 | 株式会社デンソー | エッチング液及びエッチング加工方法 |
| JP4975430B2 (ja) * | 2006-12-28 | 2012-07-11 | 関東化学株式会社 | 異方性エッチング液およびそれを用いたエッチング方法 |
| TWI683362B (zh) * | 2018-12-17 | 2020-01-21 | 許富翔 | 矽鰭片結構的修整方法 |
| JP2021012940A (ja) * | 2019-07-05 | 2021-02-04 | 株式会社デンソー | 半導体装置の製造方法 |
| US11508828B2 (en) * | 2020-07-06 | 2022-11-22 | Applied Materials, Inc. | Selective silicon etch for gate all around transistors |
| JP7765206B2 (ja) * | 2021-06-24 | 2025-11-06 | 花王株式会社 | シリコン用エッチング液 |
-
2024
- 2024-06-27 JP JP2025530207A patent/JPWO2025005205A1/ja active Pending
- 2024-06-27 KR KR1020257041995A patent/KR20260027156A/ko active Pending
- 2024-06-27 WO PCT/JP2024/023437 patent/WO2025005205A1/ja not_active Ceased
- 2024-06-28 TW TW113124273A patent/TW202511453A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2025005205A1 (https=) | 2025-01-02 |
| TW202511453A (zh) | 2025-03-16 |
| WO2025005205A1 (ja) | 2025-01-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7754920B2 (ja) | ケイ素－ゲルマニウム材料の選択的エッチングのための組成物、その使用及び方法 | |
| KR102283745B1 (ko) | 반도체 소자의 제조 동안 질화티탄에 비해 질화탄탈을 선택적으로 제거하기 위한 에칭액 | |
| CN108231581A (zh) | 湿蚀刻化学品 | |
| US20230374383A1 (en) | Etching Composition, Etching Method, Method for Manufacturing Semiconductor Device, and Method for Manufacturing Gate-All-Around-Type Transistor | |
| EP4483397A1 (en) | Composition, its use and a process for selectively etching silicon-germanium material | |
| JP6198671B2 (ja) | エッチング方法、これに用いるエッチング液、ならびに半導体基板製品の製造方法 | |
| WO2023280637A1 (en) | Use of a composition and a process for selectively etching silicon | |
| KR102379073B1 (ko) | 식각액 조성물 | |
| WO2023079908A1 (ja) | エッチング液、エッチング方法、半導体デバイスの製造方法及びゲートオールアラウンド型トランジスタの製造方法 | |
| KR20260027156A (ko) | 에칭액, 에칭 방법 및 반도체 디바이스의 제조 방법 | |
| US20260117124A1 (en) | Etching liquid, etching method, and method for manufacturing semiconductor device | |
| KR102372879B1 (ko) | 식각액 조성물 | |
| KR20260027162A (ko) | 에칭액, 에칭 방법 및 반도체 디바이스의 제조 방법 | |
| KR20140028446A (ko) | 금속 배선 식각액 조성물 및 이를 이용한 금속 배선 형성 방법 | |
| WO2025183059A1 (ja) | エッチング組成物、エッチング方法、半導体デバイスの製造方法及びトランジスタの製造方法 | |
| JP2025021744A (ja) | エッチング方法及び半導体デバイスの製造方法 | |
| US20250361441A1 (en) | Etching composition, etching method, method for manufacturing semiconductor device, and method for manufacturing gate-all-around-type transistor | |
| WO2025182988A1 (ja) | エッチング組成物、エッチング組成物の製造方法、エッチング方法、半導体デバイスの製造方法、トランジスタの製造方法及び組成物の使用 | |
| US20260008957A1 (en) | Etching composition, method for manufacturing etching composition, etching method, method for manufacturing semiconductor device, and method for manufacturing gate-all-around transistor | |
| KR102844280B1 (ko) | 식각액 조성물, 식각액 예비-조성물 및 이의 제조방법 | |
| WO2025206082A1 (ja) | エッチング組成物、エッチング方法、半導体デバイスの製造方法及びｃｆｅｔの製造方法 | |
| WO2023161055A1 (en) | Composition, its use and a process for selectively etching silicon-germanium material | |
| JP2026069632A (ja) | エッチング組成物、エッチング方法、半導体デバイスの製造方法及びゲートオールアラウンド型トランジスタの製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| Q12 | Application published |
Free format text: ST27 STATUS EVENT CODE: A-1-1-Q10-Q12-NAP-PG1501 (AS PROVIDED BY THE NATIONAL OFFICE) |