TW202510689A - 半導體裝置及半導體裝置的製造方法 - Google Patents

半導體裝置及半導體裝置的製造方法 Download PDF

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Publication number
TW202510689A
TW202510689A TW113126379A TW113126379A TW202510689A TW 202510689 A TW202510689 A TW 202510689A TW 113126379 A TW113126379 A TW 113126379A TW 113126379 A TW113126379 A TW 113126379A TW 202510689 A TW202510689 A TW 202510689A
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TW
Taiwan
Prior art keywords
conductive layer
layer
insulating layer
conductive
opening
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TW113126379A
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English (en)
Chinese (zh)
Inventor
山崎舜平
中島基
井坂史人
國武寛司
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日商半導體能源研究所股份有限公司
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Publication of TW202510689A publication Critical patent/TW202510689A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional [3D] arrangements, e.g. with cells on different height levels

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  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW113126379A 2023-07-20 2024-07-15 半導體裝置及半導體裝置的製造方法 TW202510689A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023118292 2023-07-20
JP2023-118292 2023-07-20

Publications (1)

Publication Number Publication Date
TW202510689A true TW202510689A (zh) 2025-03-01

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ID=94281403

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TW113126379A TW202510689A (zh) 2023-07-20 2024-07-15 半導體裝置及半導體裝置的製造方法

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JP (1) JPWO2025017440A1 (https=)
KR (1) KR20260041049A (https=)
CN (1) CN121420639A (https=)
TW (1) TW202510689A (https=)
WO (1) WO2025017440A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9312257B2 (en) * 2012-02-29 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6100559B2 (ja) * 2012-03-05 2017-03-22 株式会社半導体エネルギー研究所 半導体記憶装置
US10074576B2 (en) * 2014-02-28 2018-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
KR102871324B1 (ko) * 2018-06-08 2025-10-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
CN114792735A (zh) * 2021-01-26 2022-07-26 华为技术有限公司 薄膜晶体管、存储器及制作方法、电子设备
JP2023044118A (ja) * 2021-09-17 2023-03-30 キオクシア株式会社 半導体記憶装置

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KR20260041049A (ko) 2026-03-26
CN121420639A (zh) 2026-01-27
JPWO2025017440A1 (https=) 2025-01-23
WO2025017440A1 (ja) 2025-01-23

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