JPWO2025017440A1 - - Google Patents
Info
- Publication number
- JPWO2025017440A1 JPWO2025017440A1 JP2025533553A JP2025533553A JPWO2025017440A1 JP WO2025017440 A1 JPWO2025017440 A1 JP WO2025017440A1 JP 2025533553 A JP2025533553 A JP 2025533553A JP 2025533553 A JP2025533553 A JP 2025533553A JP WO2025017440 A1 JPWO2025017440 A1 JP WO2025017440A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the three-dimensional [3D] arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional [3D] arrangements, e.g. with cells on different height levels
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023118292 | 2023-07-20 | ||
| PCT/IB2024/056785 WO2025017440A1 (ja) | 2023-07-20 | 2024-07-12 | 半導体装置、及び半導体装置の作製方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2025017440A1 true JPWO2025017440A1 (https=) | 2025-01-23 |
Family
ID=94281403
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025533553A Pending JPWO2025017440A1 (https=) | 2023-07-20 | 2024-07-12 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPWO2025017440A1 (https=) |
| KR (1) | KR20260041049A (https=) |
| CN (1) | CN121420639A (https=) |
| TW (1) | TW202510689A (https=) |
| WO (1) | WO2025017440A1 (https=) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9312257B2 (en) * | 2012-02-29 | 2016-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6100559B2 (ja) * | 2012-03-05 | 2017-03-22 | 株式会社半導体エネルギー研究所 | 半導体記憶装置 |
| US10074576B2 (en) * | 2014-02-28 | 2018-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
| KR102871324B1 (ko) * | 2018-06-08 | 2025-10-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| CN114792735A (zh) * | 2021-01-26 | 2022-07-26 | 华为技术有限公司 | 薄膜晶体管、存储器及制作方法、电子设备 |
| JP2023044118A (ja) * | 2021-09-17 | 2023-03-30 | キオクシア株式会社 | 半導体記憶装置 |
-
2024
- 2024-07-12 JP JP2025533553A patent/JPWO2025017440A1/ja active Pending
- 2024-07-12 WO PCT/IB2024/056785 patent/WO2025017440A1/ja active Pending
- 2024-07-12 CN CN202480042332.8A patent/CN121420639A/zh active Pending
- 2024-07-12 KR KR1020267000439A patent/KR20260041049A/ko active Pending
- 2024-07-15 TW TW113126379A patent/TW202510689A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR20260041049A (ko) | 2026-03-26 |
| CN121420639A (zh) | 2026-01-27 |
| TW202510689A (zh) | 2025-03-01 |
| WO2025017440A1 (ja) | 2025-01-23 |