TW202443307A - 曝光設備、曝光方法、和物品製造方法 - Google Patents

曝光設備、曝光方法、和物品製造方法 Download PDF

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Publication number
TW202443307A
TW202443307A TW113114899A TW113114899A TW202443307A TW 202443307 A TW202443307 A TW 202443307A TW 113114899 A TW113114899 A TW 113114899A TW 113114899 A TW113114899 A TW 113114899A TW 202443307 A TW202443307 A TW 202443307A
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TW
Taiwan
Prior art keywords
area
exposure
substrate
controller
measurement
Prior art date
Application number
TW113114899A
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English (en)
Chinese (zh)
Inventor
本島順一
Original Assignee
日商佳能股份有限公司
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Publication date
Application filed by 日商佳能股份有限公司 filed Critical 日商佳能股份有限公司
Publication of TW202443307A publication Critical patent/TW202443307A/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7034—Leveling
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW113114899A 2023-04-25 2024-04-22 曝光設備、曝光方法、和物品製造方法 TW202443307A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023-071693 2023-04-25
JP2023071693A JP2024157368A (ja) 2023-04-25 2023-04-25 露光装置、露光方法、および物品製造方法

Publications (1)

Publication Number Publication Date
TW202443307A true TW202443307A (zh) 2024-11-01

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ID=90730236

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113114899A TW202443307A (zh) 2023-04-25 2024-04-22 曝光設備、曝光方法、和物品製造方法

Country Status (6)

Country Link
US (1) US12663731B2 (enExample)
EP (1) EP4455793A3 (enExample)
JP (1) JP2024157368A (enExample)
KR (1) KR20240157548A (enExample)
CN (1) CN118838124A (enExample)
TW (1) TW202443307A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2026091091A (ja) * 2024-11-22 2026-06-03 キヤノン株式会社 計測装置、計測方法、露光方法、露光装置及び物品の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002334826A (ja) * 2001-05-09 2002-11-22 Canon Inc 露光方法、面位置合わせ方法、露光装置及びデバイス製造方法
JPWO2005088686A1 (ja) * 2004-03-16 2008-01-31 株式会社ニコン 段差計測方法及び装置、並びに露光方法及び装置
KR100776496B1 (ko) 2006-12-04 2007-11-16 동부일렉트로닉스 주식회사 웨이퍼 레벨링 방법
JP5498243B2 (ja) * 2010-05-07 2014-05-21 キヤノン株式会社 露光装置、露光方法及びデバイス製造方法
JP2015032800A (ja) * 2013-08-07 2015-02-16 キヤノン株式会社 リソグラフィ装置、および物品製造方法
JP6491833B2 (ja) 2014-07-31 2019-03-27 株式会社日立ハイテクノロジーズ 高さ測定装置
KR102691584B1 (ko) * 2015-02-23 2024-08-05 가부시키가이샤 니콘 계측 장치, 리소그래피 시스템 및 노광 장치, 그리고 관리 방법, 중첩 계측 방법 및 디바이스 제조 방법
KR20160123236A (ko) * 2015-04-15 2016-10-25 캐논 가부시끼가이샤 노광 장치, 노광 방법, 및 물품의 제조 방법
JP6364059B2 (ja) * 2016-11-18 2018-07-25 キヤノン株式会社 露光装置、露光方法、および物品の製造方法
JP7745407B2 (ja) * 2021-10-01 2025-09-29 キヤノン株式会社 基板上の複数のショット領域の配列を求める方法、露光方法、露光装置、物品の製造方法、プログラム及び情報処理装置
JP7538790B2 (ja) * 2021-12-15 2024-08-22 キヤノン株式会社 露光装置、露光方法及び物品の製造方法

Also Published As

Publication number Publication date
EP4455793A2 (en) 2024-10-30
CN118838124A (zh) 2024-10-25
US20240361707A1 (en) 2024-10-31
JP2024157368A (ja) 2024-11-07
US12663731B2 (en) 2026-06-23
KR20240157548A (ko) 2024-11-01
EP4455793A3 (en) 2025-05-14

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