TW202442715A - 共聚物、正型光阻組成物及光阻圖案形成方法 - Google Patents

共聚物、正型光阻組成物及光阻圖案形成方法 Download PDF

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Publication number
TW202442715A
TW202442715A TW113111243A TW113111243A TW202442715A TW 202442715 A TW202442715 A TW 202442715A TW 113111243 A TW113111243 A TW 113111243A TW 113111243 A TW113111243 A TW 113111243A TW 202442715 A TW202442715 A TW 202442715A
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TW
Taiwan
Prior art keywords
copolymer
monomer
photoresist
photoresist pattern
group
Prior art date
Application number
TW113111243A
Other languages
English (en)
Chinese (zh)
Inventor
川上晃也
梅田雅也
Original Assignee
日商日本瑞翁股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日本瑞翁股份有限公司 filed Critical 日商日本瑞翁股份有限公司
Publication of TW202442715A publication Critical patent/TW202442715A/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/22—Esters containing halogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06—Hydrocarbons
    • C08F212/08—Styrene
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
TW113111243A 2023-03-30 2024-03-26 共聚物、正型光阻組成物及光阻圖案形成方法 TW202442715A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023-056615 2023-03-30
JP2023056615 2023-03-30

Publications (1)

Publication Number Publication Date
TW202442715A true TW202442715A (zh) 2024-11-01

Family

ID=92905098

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113111243A TW202442715A (zh) 2023-03-30 2024-03-26 共聚物、正型光阻組成物及光阻圖案形成方法

Country Status (4)

Country Link
JP (1) JPWO2024203960A1 (https=)
KR (1) KR20250166894A (https=)
TW (1) TW202442715A (https=)
WO (1) WO2024203960A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100203450A1 (en) * 2009-02-11 2010-08-12 International Business Machines Corporation Photoresist compositions and methods of use
JP7172495B2 (ja) * 2018-11-22 2022-11-16 日本ゼオン株式会社 重合体及びポジ型レジスト組成物
TW202530276A (zh) * 2019-08-09 2025-08-01 日商三菱瓦斯化學股份有限公司 化合物、聚合物、組成物、膜形成用組成物、圖型形成方法、絕緣膜之形成方法及化合物之製造方法，以及含有碘之乙烯基聚合物及其乙醯化衍生物之製造方法
CN115023652A (zh) * 2020-01-31 2022-09-06 富士胶片株式会社 正型抗蚀剂组合物、抗蚀剂膜、图案形成方法及电子器件的制造方法

Also Published As

Publication number Publication date
KR20250166894A (ko) 2025-11-28
JPWO2024203960A1 (https=) 2024-10-03
WO2024203960A1 (ja) 2024-10-03

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