KR20250166894A - 공중합체, 포지티브형 레지스트 조성물, 및 레지스트 패턴 형성 방법 - Google Patents

공중합체, 포지티브형 레지스트 조성물, 및 레지스트 패턴 형성 방법

Info

Publication number
KR20250166894A
KR20250166894A KR1020257030260A KR20257030260A KR20250166894A KR 20250166894 A KR20250166894 A KR 20250166894A KR 1020257030260 A KR1020257030260 A KR 1020257030260A KR 20257030260 A KR20257030260 A KR 20257030260A KR 20250166894 A KR20250166894 A KR 20250166894A
Authority
KR
South Korea
Prior art keywords
copolymer
group
monomer
resist
resist pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257030260A
Other languages
English (en)
Korean (ko)
Inventor
아키야 카와우에
마사야 우메다
Original Assignee
니폰 제온 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 니폰 제온 가부시키가이샤 filed Critical 니폰 제온 가부시키가이샤
Publication of KR20250166894A publication Critical patent/KR20250166894A/ko
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/22—Esters containing halogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06—Hydrocarbons
    • C08F212/08—Styrene
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1020257030260A 2023-03-30 2024-03-22 공중합체, 포지티브형 레지스트 조성물, 및 레지스트 패턴 형성 방법 Pending KR20250166894A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2023-056615 2023-03-30
JP2023056615 2023-03-30
PCT/JP2024/011498 WO2024203960A1 (ja) 2023-03-30 2024-03-22 共重合体、ポジ型レジスト組成物、およびレジストパターン形成方法

Publications (1)

Publication Number Publication Date
KR20250166894A true KR20250166894A (ko) 2025-11-28

Family

ID=92905098

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257030260A Pending KR20250166894A (ko) 2023-03-30 2024-03-22 공중합체, 포지티브형 레지스트 조성물, 및 레지스트 패턴 형성 방법

Country Status (4)

Country Link
JP (1) JPWO2024203960A1 (https=)
KR (1) KR20250166894A (https=)
TW (1) TW202442715A (https=)
WO (1) WO2024203960A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100203450A1 (en) * 2009-02-11 2010-08-12 International Business Machines Corporation Photoresist compositions and methods of use
JP7172495B2 (ja) * 2018-11-22 2022-11-16 日本ゼオン株式会社 重合体及びポジ型レジスト組成物
TW202530276A (zh) * 2019-08-09 2025-08-01 日商三菱瓦斯化學股份有限公司 化合物、聚合物、組成物、膜形成用組成物、圖型形成方法、絕緣膜之形成方法及化合物之製造方法，以及含有碘之乙烯基聚合物及其乙醯化衍生物之製造方法
CN115023652A (zh) * 2020-01-31 2022-09-06 富士胶片株式会社 正型抗蚀剂组合物、抗蚀剂膜、图案形成方法及电子器件的制造方法

Also Published As

Publication number Publication date
JPWO2024203960A1 (https=) 2024-10-03
WO2024203960A1 (ja) 2024-10-03
TW202442715A (zh) 2024-11-01

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