TW202414510A - 接合型發光元件晶圓的製造方法及微led的移載方法 - Google Patents

接合型發光元件晶圓的製造方法及微led的移載方法 Download PDF

Info

Publication number
TW202414510A
TW202414510A TW112118864A TW112118864A TW202414510A TW 202414510 A TW202414510 A TW 202414510A TW 112118864 A TW112118864 A TW 112118864A TW 112118864 A TW112118864 A TW 112118864A TW 202414510 A TW202414510 A TW 202414510A
Authority
TW
Taiwan
Prior art keywords
light
bonded
wafer
emitting element
map data
Prior art date
Application number
TW112118864A
Other languages
English (en)
Chinese (zh)
Inventor
石崎順也
Original Assignee
日商信越半導體股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商信越半導體股份有限公司 filed Critical 日商信越半導體股份有限公司
Publication of TW202414510A publication Critical patent/TW202414510A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/03—Manufacture or treatment using mass transfer of LEDs, e.g. by using liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/019—Removal of at least a part of a substrate on which semiconductor layers have been formed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/021—Singulating, e.g. dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

Landscapes

  • Led Devices (AREA)
TW112118864A 2022-06-15 2023-05-22 接合型發光元件晶圓的製造方法及微led的移載方法 TW202414510A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-096574 2022-06-15
JP2022096574 2022-06-15

Publications (1)

Publication Number Publication Date
TW202414510A true TW202414510A (zh) 2024-04-01

Family

ID=89191002

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112118864A TW202414510A (zh) 2022-06-15 2023-05-22 接合型發光元件晶圓的製造方法及微led的移載方法

Country Status (6)

Country Link
US (1) US20250316541A1 (https=)
EP (1) EP4542632A1 (https=)
JP (1) JP7740548B2 (https=)
CN (1) CN119325643A (https=)
TW (1) TW202414510A (https=)
WO (1) WO2023243255A1 (https=)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH118438A (ja) * 1997-06-16 1999-01-12 Furukawa Electric Co Ltd:The 半導体レーザ装置の製造方法
JP2004119243A (ja) 2002-09-27 2004-04-15 Dainippon Printing Co Ltd 有機エレクトロルミネッセント素子の欠陥除去方法
US7378288B2 (en) 2005-01-11 2008-05-27 Semileds Corporation Systems and methods for producing light emitting diode array
JP5169509B2 (ja) 2007-06-12 2013-03-27 信越半導体株式会社 欠陥検出方法及び欠陥検出システム並びに発光素子の製造方法
WO2010092749A1 (ja) 2009-02-10 2010-08-19 パナソニック株式会社 有機ｅｌディスプレイおよびその製造方法
CN108447855B (zh) 2012-11-12 2020-11-24 晶元光电股份有限公司 半导体光电元件的制作方法
JP6918537B2 (ja) 2017-03-24 2021-08-11 東レエンジニアリング株式会社 ピックアップ方法、ピックアップ装置、及び実装装置
KR102167268B1 (ko) 2019-02-11 2020-10-19 (주)에스티아이 불량 led 제거 장치
JP7253994B2 (ja) 2019-07-23 2023-04-07 株式会社ディスコ 光デバイスの移設方法
JP7276221B2 (ja) 2020-03-25 2023-05-18 信越半導体株式会社 接合ウェーハの製造方法及び接合ウェーハ

Also Published As

Publication number Publication date
JP7740548B2 (ja) 2025-09-17
US20250316541A1 (en) 2025-10-09
CN119325643A (zh) 2025-01-17
JPWO2023243255A1 (https=) 2023-12-21
EP4542632A1 (en) 2025-04-23
WO2023243255A1 (ja) 2023-12-21

Similar Documents

Publication Publication Date Title
WO2024004680A1 (ja) 接合型発光素子ウェーハ及びその製造方法
US7148127B2 (en) Device mounting substrate and method of repairing defective device
TWI438836B (zh) 一種用於雷射切割半導體晶圓之製程方法
US20050181601A1 (en) Alloying method, and wiring forming method, display device forming method, and image display unit fabricating method
KR20030070361A (ko) 이미지 센서 소자 웨이퍼 소잉 방법
TW202225851A (zh) 同軸穿透式對準成像系統
JP2010109015A (ja) 半導体発光素子の製造方法
CN101449396B (zh) 用于制备用于安装的半导体发光器件的方法
TW202010010A (zh) 光元件晶圓加工方法
JP4734770B2 (ja) 樹脂形成素子の製造方法、画像表示装置の製造方法、および照明装置の製造方法
JP2003133708A (ja) 電子部品及びその転写方法、回路基板及びその製造方法、並びに表示装置及びその製造方法
JP2005064247A (ja) 半導体発光素子及びその製造方法
KR20100042081A (ko) 반도체 웨이퍼 절단 방법
US20250151492A1 (en) Microelectronic device transfer and cleaning with uv laser
TW202414510A (zh) 接合型發光元件晶圓的製造方法及微led的移載方法
TW202312513A (zh) 用於轉移發光二極體的裝置及方法
JP7746957B2 (ja) 接合型発光素子ウェーハの製造方法
CN105390579B (zh) 半导体发光元件晶片、半导体发光元件及其制造方法
WO2015140849A1 (ja) 紫外線発光素子の製造方法、紫外線発光素子
TW201711099A (zh) 光元件層的剝離方法
JP2003077984A (ja) 素子の位置決め方法、素子の取り出し方法、素子の転写方法、素子の配列方法及び画像表示装置の製造方法
US20110147705A1 (en) Semiconductor light-emitting device with silicone protective layer
KR102806496B1 (ko) 반도체 발광소자 및 이를 제조하는 방법
TWI557407B (zh) 晶粒檢測方法
JP4126913B2 (ja) 半導体発光素子、画像表示装置、照明装置及びこれらの製造方法