JPWO2023243255A1 - - Google Patents
Info
- Publication number
- JPWO2023243255A1 JPWO2023243255A1 JP2024528371A JP2024528371A JPWO2023243255A1 JP WO2023243255 A1 JPWO2023243255 A1 JP WO2023243255A1 JP 2024528371 A JP2024528371 A JP 2024528371A JP 2024528371 A JP2024528371 A JP 2024528371A JP WO2023243255 A1 JPWO2023243255 A1 JP WO2023243255A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/01—Manufacture or treatment
- H10H29/03—Manufacture or treatment using mass transfer of LEDs, e.g. by using liquid suspensions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/11—Separation of active layers from substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/019—Removal of at least a part of a substrate on which semiconductor layers have been formed
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/021—Singulating, e.g. dicing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022096574 | 2022-06-15 | ||
| JP2022096574 | 2022-06-15 | ||
| PCT/JP2023/017250 WO2023243255A1 (ja) | 2022-06-15 | 2023-05-08 | 接合型発光素子ウェーハの製造方法およびマイクロｌｅｄの移載方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023243255A1 true JPWO2023243255A1 (https=) | 2023-12-21 |
| JPWO2023243255A5 JPWO2023243255A5 (https=) | 2025-02-04 |
| JP7740548B2 JP7740548B2 (ja) | 2025-09-17 |
Family
ID=89191002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024528371A Active JP7740548B2 (ja) | 2022-06-15 | 2023-05-08 | 接合型発光素子ウェーハの製造方法およびマイクロｌｅｄの移載方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20250316541A1 (https=) |
| EP (1) | EP4542632A1 (https=) |
| JP (1) | JP7740548B2 (https=) |
| CN (1) | CN119325643A (https=) |
| TW (1) | TW202414510A (https=) |
| WO (1) | WO2023243255A1 (https=) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH118438A (ja) * | 1997-06-16 | 1999-01-12 | Furukawa Electric Co Ltd:The | 半導体レーザ装置の製造方法 |
| JP2008527719A (ja) * | 2005-01-11 | 2008-07-24 | セミエルイーディーズ コーポレーション | 発光ダイオードアレイを製造するためのシステム及び方法 |
| JP2016502265A (ja) * | 2012-11-12 | 2016-01-21 | 晶元光▲電▼股▲ふん▼有限公司 | 半導体発光素子及びその製造方法 |
| JP2021158159A (ja) * | 2020-03-25 | 2021-10-07 | 信越半導体株式会社 | 接合ウェーハの製造方法及び接合ウェーハ |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004119243A (ja) | 2002-09-27 | 2004-04-15 | Dainippon Printing Co Ltd | 有機エレクトロルミネッセント素子の欠陥除去方法 |
| JP5169509B2 (ja) | 2007-06-12 | 2013-03-27 | 信越半導体株式会社 | 欠陥検出方法及び欠陥検出システム並びに発光素子の製造方法 |
| WO2010092749A1 (ja) | 2009-02-10 | 2010-08-19 | パナソニック株式会社 | 有機ｅｌディスプレイおよびその製造方法 |
| JP6918537B2 (ja) | 2017-03-24 | 2021-08-11 | 東レエンジニアリング株式会社 | ピックアップ方法、ピックアップ装置、及び実装装置 |
| KR102167268B1 (ko) | 2019-02-11 | 2020-10-19 | (주)에스티아이 | 불량 led 제거 장치 |
| JP7253994B2 (ja) | 2019-07-23 | 2023-04-07 | 株式会社ディスコ | 光デバイスの移設方法 |
-
2023
- 2023-05-08 WO PCT/JP2023/017250 patent/WO2023243255A1/ja not_active Ceased
- 2023-05-08 US US18/865,613 patent/US20250316541A1/en active Pending
- 2023-05-08 CN CN202380044584.XA patent/CN119325643A/zh active Pending
- 2023-05-08 JP JP2024528371A patent/JP7740548B2/ja active Active
- 2023-05-08 EP EP23823558.4A patent/EP4542632A1/en active Pending
- 2023-05-22 TW TW112118864A patent/TW202414510A/zh unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH118438A (ja) * | 1997-06-16 | 1999-01-12 | Furukawa Electric Co Ltd:The | 半導体レーザ装置の製造方法 |
| JP2008527719A (ja) * | 2005-01-11 | 2008-07-24 | セミエルイーディーズ コーポレーション | 発光ダイオードアレイを製造するためのシステム及び方法 |
| JP2016502265A (ja) * | 2012-11-12 | 2016-01-21 | 晶元光▲電▼股▲ふん▼有限公司 | 半導体発光素子及びその製造方法 |
| JP2021158159A (ja) * | 2020-03-25 | 2021-10-07 | 信越半導体株式会社 | 接合ウェーハの製造方法及び接合ウェーハ |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7740548B2 (ja) | 2025-09-17 |
| US20250316541A1 (en) | 2025-10-09 |
| CN119325643A (zh) | 2025-01-17 |
| EP4542632A1 (en) | 2025-04-23 |
| WO2023243255A1 (ja) | 2023-12-21 |
| TW202414510A (zh) | 2024-04-01 |
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