JP7740548B2 - 接合型発光素子ウェーハの製造方法およびマイクロｌｅｄの移載方法 - Google Patents

接合型発光素子ウェーハの製造方法およびマイクロｌｅｄの移載方法

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Publication number
JP7740548B2
JP7740548B2 JP2024528371A JP2024528371A JP7740548B2 JP 7740548 B2 JP7740548 B2 JP 7740548B2 JP 2024528371 A JP2024528371 A JP 2024528371A JP 2024528371 A JP2024528371 A JP 2024528371A JP 7740548 B2 JP7740548 B2 JP 7740548B2
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Japan
Prior art keywords
light
emitting element
bonded
wafer
map data
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JP2024528371A
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English (en)
Japanese (ja)
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JPWO2023243255A5 (https=
JPWO2023243255A1 (https=
Inventor
順也 石崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
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Publication of JPWO2023243255A1 publication Critical patent/JPWO2023243255A1/ja
Publication of JPWO2023243255A5 publication Critical patent/JPWO2023243255A5/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/03—Manufacture or treatment using mass transfer of LEDs, e.g. by using liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/019—Removal of at least a part of a substrate on which semiconductor layers have been formed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/021—Singulating, e.g. dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

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  • Led Devices (AREA)
JP2024528371A 2022-06-15 2023-05-08 接合型発光素子ウェーハの製造方法およびマイクロｌｅｄの移載方法 Active JP7740548B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022096574 2022-06-15
JP2022096574 2022-06-15
PCT/JP2023/017250 WO2023243255A1 (ja) 2022-06-15 2023-05-08 接合型発光素子ウェーハの製造方法およびマイクロｌｅｄの移載方法

Publications (3)

Publication Number Publication Date
JPWO2023243255A1 JPWO2023243255A1 (https=) 2023-12-21
JPWO2023243255A5 JPWO2023243255A5 (https=) 2025-02-04
JP7740548B2 true JP7740548B2 (ja) 2025-09-17

Family

ID=89191002

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024528371A Active JP7740548B2 (ja) 2022-06-15 2023-05-08 接合型発光素子ウェーハの製造方法およびマイクロｌｅｄの移載方法

Country Status (6)

Country Link
US (1) US20250316541A1 (https=)
EP (1) EP4542632A1 (https=)
JP (1) JP7740548B2 (https=)
CN (1) CN119325643A (https=)
TW (1) TW202414510A (https=)
WO (1) WO2023243255A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008527719A (ja) 2005-01-11 2008-07-24 セミエルイーディーズ コーポレーション 発光ダイオードアレイを製造するためのシステム及び方法
JP2016502265A (ja) 2012-11-12 2016-01-21 晶元光▲電▼股▲ふん▼有限公司 半導体発光素子及びその製造方法
JP2021158159A (ja) 2020-03-25 2021-10-07 信越半導体株式会社 接合ウェーハの製造方法及び接合ウェーハ

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH118438A (ja) * 1997-06-16 1999-01-12 Furukawa Electric Co Ltd:The 半導体レーザ装置の製造方法
JP2004119243A (ja) 2002-09-27 2004-04-15 Dainippon Printing Co Ltd 有機エレクトロルミネッセント素子の欠陥除去方法
JP5169509B2 (ja) 2007-06-12 2013-03-27 信越半導体株式会社 欠陥検出方法及び欠陥検出システム並びに発光素子の製造方法
WO2010092749A1 (ja) 2009-02-10 2010-08-19 パナソニック株式会社 有機ｅｌディスプレイおよびその製造方法
JP6918537B2 (ja) 2017-03-24 2021-08-11 東レエンジニアリング株式会社 ピックアップ方法、ピックアップ装置、及び実装装置
KR102167268B1 (ko) 2019-02-11 2020-10-19 (주)에스티아이 불량 led 제거 장치
JP7253994B2 (ja) 2019-07-23 2023-04-07 株式会社ディスコ 光デバイスの移設方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008527719A (ja) 2005-01-11 2008-07-24 セミエルイーディーズ コーポレーション 発光ダイオードアレイを製造するためのシステム及び方法
JP2016502265A (ja) 2012-11-12 2016-01-21 晶元光▲電▼股▲ふん▼有限公司 半導体発光素子及びその製造方法
JP2021158159A (ja) 2020-03-25 2021-10-07 信越半導体株式会社 接合ウェーハの製造方法及び接合ウェーハ

Also Published As

Publication number Publication date
US20250316541A1 (en) 2025-10-09
CN119325643A (zh) 2025-01-17
JPWO2023243255A1 (https=) 2023-12-21
EP4542632A1 (en) 2025-04-23
WO2023243255A1 (ja) 2023-12-21
TW202414510A (zh) 2024-04-01

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