TW202411766A - 反射型光罩基底及反射型光罩 - Google Patents

反射型光罩基底及反射型光罩 Download PDF

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Publication number
TW202411766A
TW202411766A TW112128416A TW112128416A TW202411766A TW 202411766 A TW202411766 A TW 202411766A TW 112128416 A TW112128416 A TW 112128416A TW 112128416 A TW112128416 A TW 112128416A TW 202411766 A TW202411766 A TW 202411766A
Authority
TW
Taiwan
Prior art keywords
absorption layer
reflective mask
pattern
reflective
light
Prior art date
Application number
TW112128416A
Other languages
English (en)
Chinese (zh)
Inventor
岡東健
Original Assignee
日商Ａｇｃ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Ａｇｃ股份有限公司 filed Critical 日商Ａｇｃ股份有限公司
Publication of TW202411766A publication Critical patent/TW202411766A/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW112128416A 2022-08-03 2023-07-28 反射型光罩基底及反射型光罩 TW202411766A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-124350 2022-08-03
JP2022124350 2022-08-03

Publications (1)

Publication Number Publication Date
TW202411766A true TW202411766A (zh) 2024-03-16

Family

ID=89849014

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112128416A TW202411766A (zh) 2022-08-03 2023-07-28 反射型光罩基底及反射型光罩

Country Status (5)

Country Link
US (1) US20250172863A1 (https=)
JP (1) JPWO2024029409A1 (https=)
KR (1) KR20250041128A (https=)
TW (1) TW202411766A (https=)
WO (1) WO2024029409A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5766393B2 (ja) 2009-07-23 2015-08-19 株式会社東芝 反射型露光用マスクおよび半導体装置の製造方法
SG11201913862WA (en) * 2017-07-05 2020-01-30 Toppan Printing Co Ltd Reflective photomask blank and reflective photomask
JP7250511B2 (ja) * 2018-12-27 2023-04-03 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
KR102946015B1 (ko) * 2019-10-29 2026-03-31 에이지씨 가부시키가이샤 반사형 마스크 블랭크 및 반사형 마스크
KR20220122614A (ko) * 2019-12-27 2022-09-02 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크, euv 리소그래피용 반사형 마스크 및 그들의 제조 방법
CN118302719A (zh) * 2021-11-24 2024-07-05 凸版光掩模有限公司 反射型光掩模坯以及反射型光掩模

Also Published As

Publication number Publication date
JPWO2024029409A1 (https=) 2024-02-08
KR20250041128A (ko) 2025-03-25
WO2024029409A1 (ja) 2024-02-08
US20250172863A1 (en) 2025-05-29

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