KR20250041128A - 반사형 마스크 블랭크 및 반사형 마스크 - Google Patents

반사형 마스크 블랭크 및 반사형 마스크 Download PDF

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Publication number
KR20250041128A
KR20250041128A KR1020257002975A KR20257002975A KR20250041128A KR 20250041128 A KR20250041128 A KR 20250041128A KR 1020257002975 A KR1020257002975 A KR 1020257002975A KR 20257002975 A KR20257002975 A KR 20257002975A KR 20250041128 A KR20250041128 A KR 20250041128A
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KR
South Korea
Prior art keywords
reflective mask
pattern
absorption layer
line
reflective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257002975A
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English (en)
Korean (ko)
Inventor
다케시 오카토
Original Assignee
에이지씨 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이지씨 가부시키가이샤 filed Critical 에이지씨 가부시키가이샤
Publication of KR20250041128A publication Critical patent/KR20250041128A/ko
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020257002975A 2022-08-03 2023-07-25 반사형 마스크 블랭크 및 반사형 마스크 Pending KR20250041128A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2022-124350 2022-08-03
JP2022124350 2022-08-03
PCT/JP2023/027271 WO2024029409A1 (ja) 2022-08-03 2023-07-25 反射型マスクブランク及び反射型マスク

Publications (1)

Publication Number Publication Date
KR20250041128A true KR20250041128A (ko) 2025-03-25

Family

ID=89849014

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257002975A Pending KR20250041128A (ko) 2022-08-03 2023-07-25 반사형 마스크 블랭크 및 반사형 마스크

Country Status (5)

Country Link
US (1) US20250172863A1 (https=)
JP (1) JPWO2024029409A1 (https=)
KR (1) KR20250041128A (https=)
TW (1) TW202411766A (https=)
WO (1) WO2024029409A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011029334A (ja) 2009-07-23 2011-02-10 Toshiba Corp 反射型露光用マスクおよび半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11201913862WA (en) * 2017-07-05 2020-01-30 Toppan Printing Co Ltd Reflective photomask blank and reflective photomask
JP7250511B2 (ja) * 2018-12-27 2023-04-03 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
KR102946015B1 (ko) * 2019-10-29 2026-03-31 에이지씨 가부시키가이샤 반사형 마스크 블랭크 및 반사형 마스크
KR20220122614A (ko) * 2019-12-27 2022-09-02 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크, euv 리소그래피용 반사형 마스크 및 그들의 제조 방법
CN118302719A (zh) * 2021-11-24 2024-07-05 凸版光掩模有限公司 反射型光掩模坯以及反射型光掩模

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011029334A (ja) 2009-07-23 2011-02-10 Toshiba Corp 反射型露光用マスクおよび半導体装置の製造方法

Also Published As

Publication number Publication date
JPWO2024029409A1 (https=) 2024-02-08
WO2024029409A1 (ja) 2024-02-08
TW202411766A (zh) 2024-03-16
US20250172863A1 (en) 2025-05-29

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PA0105 International application

Patent event date: 20250124

Patent event code: PA01051R01D

Comment text: International Patent Application

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