TW202410417A - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TW202410417A
TW202410417A TW112130962A TW112130962A TW202410417A TW 202410417 A TW202410417 A TW 202410417A TW 112130962 A TW112130962 A TW 112130962A TW 112130962 A TW112130962 A TW 112130962A TW 202410417 A TW202410417 A TW 202410417A
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TW
Taiwan
Prior art keywords
layer
insulating layer
semiconductor device
semiconductor
addition
Prior art date
Application number
TW112130962A
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English (en)
Chinese (zh)
Inventor
山崎舜平
國武寛司
松嵜隆徳
Original Assignee
日商半導體能源研究所股份有限公司
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Publication date
Application filed by 日商半導體能源研究所股份有限公司 filed Critical 日商半導體能源研究所股份有限公司
Publication of TW202410417A publication Critical patent/TW202410417A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

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  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW112130962A 2022-08-24 2023-08-17 半導體裝置 TW202410417A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022133598 2022-08-24
JP2022-133598 2022-08-24

Publications (1)

Publication Number Publication Date
TW202410417A true TW202410417A (zh) 2024-03-01

Family

ID=90012648

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112130962A TW202410417A (zh) 2022-08-24 2023-08-17 半導體裝置

Country Status (4)

Country Link
JP (1) JPWO2024042404A1 (https=)
CN (1) CN119769190A (https=)
TW (1) TW202410417A (https=)
WO (1) WO2024042404A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9691772B2 (en) * 2011-03-03 2017-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including memory cell which includes transistor and capacitor
TWI685113B (zh) * 2015-02-11 2020-02-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
US20230307550A1 (en) * 2020-08-27 2023-09-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2022049605A (ja) * 2020-09-16 2022-03-29 キオクシア株式会社 半導体装置及び半導体記憶装置

Also Published As

Publication number Publication date
CN119769190A (zh) 2025-04-04
WO2024042404A1 (ja) 2024-02-29
JPWO2024042404A1 (https=) 2024-02-29

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