JPWO2024042404A1 - - Google Patents

Info

Publication number
JPWO2024042404A1
JPWO2024042404A1 JP2024542436A JP2024542436A JPWO2024042404A1 JP WO2024042404 A1 JPWO2024042404 A1 JP WO2024042404A1 JP 2024542436 A JP2024542436 A JP 2024542436A JP 2024542436 A JP2024542436 A JP 2024542436A JP WO2024042404 A1 JPWO2024042404 A1 JP WO2024042404A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024542436A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2024042404A1 publication Critical patent/JPWO2024042404A1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B53/00Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/20Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B53/00Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00Three-dimensional [3D] integrated devices
JP2024542436A 2022-08-24 2023-08-04 Pending JPWO2024042404A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022133598 2022-08-24
PCT/IB2023/057887 WO2024042404A1 (ja) 2022-08-24 2023-08-04 半導体装置

Publications (1)

Publication Number Publication Date
JPWO2024042404A1 true JPWO2024042404A1 (https=) 2024-02-29

Family

ID=90012648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024542436A Pending JPWO2024042404A1 (https=) 2022-08-24 2023-08-04

Country Status (4)

Country Link
JP (1) JPWO2024042404A1 (https=)
CN (1) CN119769190A (https=)
TW (1) TW202410417A (https=)
WO (1) WO2024042404A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9691772B2 (en) * 2011-03-03 2017-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including memory cell which includes transistor and capacitor
TWI685113B (zh) * 2015-02-11 2020-02-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
US20230307550A1 (en) * 2020-08-27 2023-09-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2022049605A (ja) * 2020-09-16 2022-03-29 キオクシア株式会社 半導体装置及び半導体記憶装置

Also Published As

Publication number Publication date
CN119769190A (zh) 2025-04-04
WO2024042404A1 (ja) 2024-02-29
TW202410417A (zh) 2024-03-01

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