CN119769190A - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
- Publication number
- CN119769190A CN119769190A CN202380060987.3A CN202380060987A CN119769190A CN 119769190 A CN119769190 A CN 119769190A CN 202380060987 A CN202380060987 A CN 202380060987A CN 119769190 A CN119769190 A CN 119769190A
- Authority
- CN
- China
- Prior art keywords
- layer
- insulating layer
- semiconductor device
- semiconductor
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional [3D] arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
Landscapes
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022133598 | 2022-08-24 | ||
| JP2022-133598 | 2022-08-24 | ||
| PCT/IB2023/057887 WO2024042404A1 (ja) | 2022-08-24 | 2023-08-04 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN119769190A true CN119769190A (zh) | 2025-04-04 |
Family
ID=90012648
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202380060987.3A Pending CN119769190A (zh) | 2022-08-24 | 2023-08-04 | 半导体装置 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPWO2024042404A1 (https=) |
| CN (1) | CN119769190A (https=) |
| TW (1) | TW202410417A (https=) |
| WO (1) | WO2024042404A1 (https=) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9691772B2 (en) * | 2011-03-03 | 2017-06-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device including memory cell which includes transistor and capacitor |
| TWI685113B (zh) * | 2015-02-11 | 2020-02-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| US20230307550A1 (en) * | 2020-08-27 | 2023-09-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2022049605A (ja) * | 2020-09-16 | 2022-03-29 | キオクシア株式会社 | 半導体装置及び半導体記憶装置 |
-
2023
- 2023-08-04 WO PCT/IB2023/057887 patent/WO2024042404A1/ja not_active Ceased
- 2023-08-04 CN CN202380060987.3A patent/CN119769190A/zh active Pending
- 2023-08-04 JP JP2024542436A patent/JPWO2024042404A1/ja active Pending
- 2023-08-17 TW TW112130962A patent/TW202410417A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024042404A1 (ja) | 2024-02-29 |
| TW202410417A (zh) | 2024-03-01 |
| JPWO2024042404A1 (https=) | 2024-02-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |