TW202407120A - 氧化鎵膜與其製造裝置及製造方法 - Google Patents

氧化鎵膜與其製造裝置及製造方法 Download PDF

Info

Publication number
TW202407120A
TW202407120A TW112111179A TW112111179A TW202407120A TW 202407120 A TW202407120 A TW 202407120A TW 112111179 A TW112111179 A TW 112111179A TW 112111179 A TW112111179 A TW 112111179A TW 202407120 A TW202407120 A TW 202407120A
Authority
TW
Taiwan
Prior art keywords
gallium oxide
oxide film
oxygen
ozone
mixed gas
Prior art date
Application number
TW112111179A
Other languages
English (en)
Chinese (zh)
Inventor
堀勝
小田修
阿倫 庫瑪爾 達響
林篤
青峰信孝
Original Assignee
國立大學法人東海國立大學機構
日商Ａｇｃ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 國立大學法人東海國立大學機構, 日商Ａｇｃ股份有限公司 filed Critical 國立大學法人東海國立大學機構
Publication of TW202407120A publication Critical patent/TW202407120A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW112111179A 2022-03-25 2023-03-24 氧化鎵膜與其製造裝置及製造方法 TW202407120A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2022050538 2022-03-25
JP2022-050538 2022-03-25
JP2023024459 2023-02-20
JP2023-024459 2023-02-20

Publications (1)

Publication Number Publication Date
TW202407120A true TW202407120A (zh) 2024-02-16

Family

ID=88101089

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112111179A TW202407120A (zh) 2022-03-25 2023-03-24 氧化鎵膜與其製造裝置及製造方法

Country Status (4)

Country Link
US (1) US20250034752A1 (https=)
JP (1) JPWO2023182311A1 (https=)
TW (1) TW202407120A (https=)
WO (1) WO2023182311A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5828568B1 (ja) * 2014-08-29 2015-12-09 株式会社タムラ製作所 半導体素子及びその製造方法
JP6539906B2 (ja) * 2014-09-25 2019-07-10 株式会社Flosfia 結晶性積層構造体の製造方法および半導体装置
JP6535204B2 (ja) * 2015-04-23 2019-06-26 株式会社タムラ製作所 Ｇａ２Ｏ３系結晶膜の形成方法
JP7179276B2 (ja) * 2017-09-29 2022-11-29 株式会社タムラ製作所 電界効果トランジスタ
TWI848976B (zh) * 2018-10-04 2024-07-21 日商Ａｄｅｋａ股份有限公司 原子層堆積法用薄膜形成用原料、薄膜形成用原料、薄膜之製造方法及化合物
JP6839694B2 (ja) * 2018-12-17 2021-03-10 株式会社デンソー 酸化ガリウム膜の成膜方法

Also Published As

Publication number Publication date
JPWO2023182311A1 (https=) 2023-09-28
WO2023182311A1 (ja) 2023-09-28
US20250034752A1 (en) 2025-01-30

Similar Documents

Publication Publication Date Title
TWI518748B (zh) Semiconductor device or crystal
US8722526B2 (en) Growing of gallium-nitrade layer on silicon substrate
US20250015144A1 (en) SUBSTRATE WITH ß-GALLIUM OXIDE FILM AND PRODUCTION METHOD THEREFOR
CN101160645A (zh) 薄膜形成方法
US20160149005A1 (en) Semiconductor device and manufacturing method for same, crystal, and manufacturing method for same
Grüter et al. Deposition of high quality GaAs films at fast rates in the LP-CVD system
CN118922921A (zh) 氧化镓膜及其制造装置和制造方法
JPS639368B2 (https=)
JP2020007202A (ja) Ｉｉｉ族窒化物基板およびｉｉｉ族窒化物結晶の製造方法
KR101926694B1 (ko) 탄화규소 에피 웨이퍼 및 이의 제조 방법
Abd Rahman et al. Agglomeration enhancement of AlN surface diffusion fluxes on a (0 0 0 1)-sapphire substrate grown by pulsed atomic-layer epitaxy techniques via MOCVD
TW202407120A (zh) 氧化鎵膜與其製造裝置及製造方法
JP7176099B2 (ja) 半導体膜
KR20140019726A (ko) 다이아몬드의 제조 방법 및 직류 플라즈마 ｃｖｄ 장치
CN110670135B (zh) 一种氮化镓单晶材料及其制备方法
CN1053229C (zh) 利用磁场的微波增强型cvd系统和方法
Ohmi et al. Impacts of Noble Gas Dilution on Si Film Structure prepared by atmospheric-pressure plasma enhanced chemical transport
CN118922920A (zh) 带有β型氧化镓膜的基板和其制造方法
JPWO2019224953A1 (ja) ＳｉＣエピタキシャル基板の製造方法
CN117187954B (zh) 一种等离子增强化学气相沉积生长GaON外延薄膜的制备方法
JP4876242B2 (ja) 結晶成長方法及び結晶成長装置
CN118660994A (zh) 衬底基板及单晶金刚石层叠基板以及它们的制造方法
JP3757698B2 (ja) 半導体製造装置および半導体製造システム
JP5589310B2 (ja) 被膜形成物の製造方法
WO2025062944A1 (ja) β型酸化ガリウム膜の製造方法及びβ型酸化ガリウム膜付き基板