TW202403848A - 遮罩之形成方法 - Google Patents

遮罩之形成方法 Download PDF

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Publication number
TW202403848A
TW202403848A TW112124283A TW112124283A TW202403848A TW 202403848 A TW202403848 A TW 202403848A TW 112124283 A TW112124283 A TW 112124283A TW 112124283 A TW112124283 A TW 112124283A TW 202403848 A TW202403848 A TW 202403848A
Authority
TW
Taiwan
Prior art keywords
resin layer
substrate
plate
groove
mask
Prior art date
Application number
TW112124283A
Other languages
English (en)
Chinese (zh)
Inventor
大前卷子
小清水秀輝
Original Assignee
日商迪思科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW202403848A publication Critical patent/TW202403848A/zh

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C69/00Combinations of shaping techniques not provided for in a single one of main groups B29C39/00 - B29C67/00, e.g. associations of moulding and joining techniques; Apparatus therefore
    • B29C69/001Combinations of shaping techniques not provided for in a single one of main groups B29C39/00 - B29C67/00, e.g. associations of moulding and joining techniques; Apparatus therefore a shaping technique combined with cutting, e.g. in parts or slices combined with rearranging and joining the cut parts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02Electroplating of selected surface areas
    • C25D5/022Electroplating of selected surface areas using masking means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Dicing (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW112124283A 2022-07-04 2023-06-29 遮罩之形成方法 TW202403848A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-107549 2022-07-04
JP2022107549A JP2024006547A (ja) 2022-07-04 2022-07-04 マスクの形成方法

Publications (1)

Publication Number Publication Date
TW202403848A true TW202403848A (zh) 2024-01-16

Family

ID=89354599

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112124283A TW202403848A (zh) 2022-07-04 2023-06-29 遮罩之形成方法

Country Status (4)

Country Link
JP (1) JP2024006547A (ja)
KR (1) KR20240004103A (ja)
CN (1) CN117341221A (ja)
TW (1) TW202403848A (ja)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3999584B2 (ja) 2002-07-04 2007-10-31 株式会社ディスコ セラミックスチップコンデンサーシートの分割方法

Also Published As

Publication number Publication date
KR20240004103A (ko) 2024-01-11
CN117341221A (zh) 2024-01-05
JP2024006547A (ja) 2024-01-17

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