CN117341221A - 掩模的形成方法 - Google Patents
掩模的形成方法 Download PDFInfo
- Publication number
- CN117341221A CN117341221A CN202310777125.4A CN202310777125A CN117341221A CN 117341221 A CN117341221 A CN 117341221A CN 202310777125 A CN202310777125 A CN 202310777125A CN 117341221 A CN117341221 A CN 117341221A
- Authority
- CN
- China
- Prior art keywords
- resin layer
- substrate
- plate
- forming
- cutting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000005520 cutting process Methods 0.000 claims abstract description 106
- 239000011347 resin Substances 0.000 claims abstract description 89
- 229920005989 resin Polymers 0.000 claims abstract description 89
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 239000007788 liquid Substances 0.000 claims abstract description 15
- 238000002360 preparation method Methods 0.000 claims abstract description 10
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 238000007747 plating Methods 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 53
- 239000000463 material Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 2
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C69/00—Combinations of shaping techniques not provided for in a single one of main groups B29C39/00 - B29C67/00, e.g. associations of moulding and joining techniques; Apparatus therefore
- B29C69/001—Combinations of shaping techniques not provided for in a single one of main groups B29C39/00 - B29C67/00, e.g. associations of moulding and joining techniques; Apparatus therefore a shaping technique combined with cutting, e.g. in parts or slices combined with rearranging and joining the cut parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/022—Electroplating of selected surface areas using masking means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Dicing (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022107549A JP2024006547A (ja) | 2022-07-04 | 2022-07-04 | マスクの形成方法 |
| JP2022-107549 | 2022-07-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117341221A true CN117341221A (zh) | 2024-01-05 |
Family
ID=89354599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310777125.4A Pending CN117341221A (zh) | 2022-07-04 | 2023-06-28 | 掩模的形成方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2024006547A (ja) |
| KR (1) | KR20240004103A (ja) |
| CN (1) | CN117341221A (ja) |
| TW (1) | TW202403848A (ja) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3999584B2 (ja) | 2002-07-04 | 2007-10-31 | 株式会社ディスコ | セラミックスチップコンデンサーシートの分割方法 |
-
2022
- 2022-07-04 JP JP2022107549A patent/JP2024006547A/ja active Pending
-
2023
- 2023-06-22 KR KR1020230080403A patent/KR20240004103A/ko unknown
- 2023-06-28 CN CN202310777125.4A patent/CN117341221A/zh active Pending
- 2023-06-29 TW TW112124283A patent/TW202403848A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR20240004103A (ko) | 2024-01-11 |
| JP2024006547A (ja) | 2024-01-17 |
| TW202403848A (zh) | 2024-01-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication |