TW202346080A - Substrate adhering device and substrate adhering method characterized in that the arrangement of a stress dispersion plate can uniformize the pressurizing force applied to the joint surface of substrates - Google Patents

Substrate adhering device and substrate adhering method characterized in that the arrangement of a stress dispersion plate can uniformize the pressurizing force applied to the joint surface of substrates Download PDF

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TW202346080A
TW202346080A TW112104413A TW112104413A TW202346080A TW 202346080 A TW202346080 A TW 202346080A TW 112104413 A TW112104413 A TW 112104413A TW 112104413 A TW112104413 A TW 112104413A TW 202346080 A TW202346080 A TW 202346080A
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flat plate
substrate
substrates
contact piece
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菊地右文
山田芳裕
水澤竜馬
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日商東京應化工業股份有限公司
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

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Abstract

To seek uniformization of the pressurizing force applied to the joint surface of multiple substrates. The substrate adhering device (100) includes: the first flat plate (20) and the second flat plate (30), which perform a clamping in the state of overlapping the substrates (S1, S2); and the pushing mechanism (50) pushing one of the first flat plate (20) and the second flat plate (30) to the other. In addition, at least one of the first flat plate (20) and the second flat plate (30) is provided with the flat plate main body (31) and the butting piece (35) that can be deformed, is held on the flat plate main body (31) to butt the substrates (S1, S2) and has higher flexibility than the flat plate main body (31).

Description

基板黏貼裝置及基板黏貼方法Substrate pasting device and substrate pasting method

本發明係關於基板黏貼裝置及基板黏貼方法。The present invention relates to a substrate pasting device and a substrate pasting method.

在重疊複數基板狀態下黏貼的基板黏貼裝置眾所皆知。作為如此的基板黏貼裝置，揭示例如具備有被加壓部、被配置在其下面的應力分散部、被配置在應力分散部之下面的零件保持部之構成(例如，參照專利文獻1)。在該構成中，零件保持部係被安裝於構成應力分散部之應力分散板的下面。來自加壓機構的加壓力以點荷重被施加在被加壓部之上面中央。應力分散板在其上面圓環狀地具備梯形狀剖面的接觸部。複數基板係被夾入零件保持部和應力分散部之間。來自加壓機構之加壓力係藉由被形成在應力分散板之圓環狀之接觸部，朝周圍分散。如此一來，藉由設置應力分散板，被施加在複數基板彼此之接合面的加壓力被均勻化。 [先前技術文獻] [專利文獻] A substrate pasting device that adheres multiple substrates while stacking them is known. As such a substrate bonding device, a structure including a pressurized portion, a stress dispersing portion disposed below the pressurized portion, and a component holding portion disposed below the stress dispersing portion is disclosed (for example, see Patent Document 1). In this structure, the component holding part is attached to the lower surface of the stress dispersion plate which constitutes the stress dispersion part. The pressurizing force from the pressurizing mechanism is applied as a point load on the upper center of the pressurized part. The stress dispersion plate is provided with a contact portion having a trapezoidal cross section in an annular shape on its upper surface. The plurality of substrates are sandwiched between the component holding part and the stress dispersing part. The pressurizing force from the pressurizing mechanism is dispersed toward the surroundings through the annular contact portion formed on the stress dispersing plate. In this way, by providing the stress dispersion plate, the pressure applied to the joint surfaces of the plurality of substrates is uniformized. [Prior technical literature] [Patent Document]

[專利文獻1]日本特開2007-301593號公報[Patent Document 1] Japanese Patent Application Publication No. 2007-301593

[發明所欲解決之課題][Problem to be solved by the invention]

因專利文獻1之基板黏貼裝置經由圓環狀之接觸部而傳達加壓力，故在加壓的軸方向之延長上無傳達加壓力之部分，不足以使加壓力均勻地分散。為了適當地黏貼基板彼此，期望使被施加於複數基板彼此之接合面的加壓力更均勻化。再者，在被施加於複數基板彼此之接合面的加壓力之均勻性低的情況，例如，在基板黏貼裝置之後工程，於進行基板之洗淨之時，也有基板上之電子零件脫落之情形。Since the substrate bonding device of Patent Document 1 transmits the pressurizing force through the annular contact portion, there is no portion transmitting the pressurizing force along the extension in the axial direction of the pressurization, which is insufficient to evenly distribute the pressurizing force. In order to properly adhere the substrates to each other, it is desired to make the pressure applied to the joint surfaces of the plurality of substrates more uniform. Furthermore, when the uniformity of the pressure applied to the joint surfaces of multiple substrates is low, for example, when cleaning the substrates after the substrate bonding process, electronic components on the substrates may fall off. .

本發明係以提供能夠謀求被施加於複數基板彼此之接合面之加壓力的均勻化的基板黏貼裝置及基板黏貼方法為目的。 [用以解決課題之手段] The present invention aims to provide a substrate bonding device and a substrate bonding method capable of uniformizing the pressure applied to the joint surfaces of a plurality of substrates. [Means used to solve problems]

在本發明之第1態樣中，提供一種基板黏貼裝置，具備：第1平板及第2平板，其係在重疊複數基板之狀態下進行夾持，推壓機構，其係將第1平板及第2平板中之一方推壓至另一方，第1平板及第2平板之至少一方具備：平板主體，和能夠變形的抵接片，其係被支持於平板主體而抵接於基板，具有比平板主體更高的柔軟性。In a first aspect of the present invention, a substrate bonding device is provided, including a first flat plate and a second flat plate that clamp a plurality of substrates while overlapping them, and a pushing mechanism that connects the first flat plate and the second flat plate. One of the second flat plates is pushed to the other, and at least one of the first flat plate and the second flat plate is provided with: a flat plate main body, and a deformable contact piece, which is supported by the flat plate main body and abuts against the base plate, and has a ratio of Flat body for greater softness.

在本發明之第2態樣中，提供一種基板黏貼方法，其係以重疊複數基板之狀態下，藉由以第1平板及第2平板夾持，黏貼複數基板的方法，包含：在第1平板和第2平板之間，在重疊複數基板之狀態下配置之步驟；和藉由將第1平板及第2平板中之任一方朝向另一方推壓，將推壓力施加至第1平板和第2平板之間的複數基板之步驟，推壓力係經由因應推壓力而變形的抵接片，而被施加至複數基板。 [發明之效果] In a second aspect of the present invention, a substrate bonding method is provided, which is a method of bonding a plurality of substrates by sandwiching them with a first flat plate and a second flat plate in a state where the plurality of substrates are overlapped, including: in the first The steps of arranging a plurality of substrates between the flat plate and the second flat plate; and applying a pressing force to the first flat plate and the second flat plate by pushing either one of the first flat plate and the second flat plate toward the other. 2. In the step of placing a plurality of substrates between the flat plates, the pressing force is applied to the plurality of substrates through the contact piece deformed in response to the pressing force. [Effects of the invention]

若藉由本發明時，因基板黏貼裝置係第1平板及第2平板之至少一方抵接於基板，具備具有較平板本體更高之柔軟性的能夠變形的抵接片，故推壓機構所致之推壓力，係經由抵接片而被傳達至複數基板。因此，可以謀求被施加於複數基板彼此之接合面的加壓力之均勻化，可以適當地接合複數基板彼此。According to the present invention, since at least one of the first flat plate and the second flat plate is in contact with the substrate and has a deformable contact piece with higher flexibility than the flat plate body, the substrate pasting device has a pressing mechanism. The pushing force is transmitted to the plurality of substrates through the contact piece. Therefore, the pressure applied to the bonding surfaces of the plurality of substrates can be made uniform, and the plurality of substrates can be appropriately bonded.

以下，針對本發明之實施型態，一面參照圖面一面予以說明。但是，本發明不被限定於以下說明。再者，在圖面中，為了容易理解地說明實施型態，有省略一部分來表現之部分。而且，在圖面中，有放大或強調一部分而予以記載等適當地變更縮尺來表現，與實際的製品大小、形狀不同之情況。在以下之各圖中，使用XYZ直角坐標系統而說明圖中之方向。在該XYZ直角坐標系統中，將與水平面平行之平面設為XY平面。在該XY平面中，將與基板S1和基板S2之搬運方向平行的方向設為X方向，將與X方向正交之方向設為Y方向。再者，將與XY平面呈垂直之方向記載為Z方向(高度方向)。X方向、Y方向及Z方向之各者係以圖中箭號所指之方向為+方向，與箭號所指的方向相反的方向為-方向予以說明。Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention is not limited to the following description. In addition, in the drawings, in order to explain the embodiments easily and understandably, some parts are omitted and shown. In addition, the size and shape of the actual product may differ from the actual product size or shape in the drawings by enlarging or emphasizing a part for description, or by appropriately changing the scale. In the following figures, the XYZ rectangular coordinate system is used to illustrate the directions in the figure. In this XYZ rectangular coordinate system, let the plane parallel to the horizontal plane be the XY plane. In the XY plane, let the direction parallel to the conveyance direction of the substrate S1 and the substrate S2 be the X direction, and let the direction orthogonal to the X direction be the Y direction. In addition, the direction perpendicular to the XY plane is described as the Z direction (height direction). Each of the X direction, the Y direction, and the Z direction is explained by assuming that the direction pointed by the arrow in the figure is the + direction, and the direction opposite to the direction pointed by the arrow is the - direction.

＜基板黏貼裝置＞ 針對實施型態所涉及之基板黏貼裝置100予以說明。圖1為表示實施型態所涉及之基板黏貼裝置100之一例的圖。基板黏貼裝置100係藉由將推壓力施加至在前工程中經由接著層F而暫時被黏貼之基板S1、S2，黏貼基板S1和基板S2。接著層F係被設置在基板S1及基板S2之至少一方。 ＜Substrate bonding device＞ The substrate bonding device 100 according to the embodiment will be described. FIG. 1 is a diagram showing an example of the substrate bonding device 100 according to the embodiment. The substrate bonding device 100 bonds the substrates S1 and S2 by applying a pressing force to the substrates S1 and S2 that have been temporarily bonded through the adhesive layer F in the previous process. Next, the layer F is provided on at least one of the substrate S1 and the substrate S2.

基板S1及基板S2係例如玻璃基板，但是即使為玻璃基板以外之半導體基板、樹脂性基板等亦可。在本實施型態中，被貼合的兩片基板之中，將上側基板設為基板S1，將下側基板稱為基板S2。再者，將黏貼基板S1和基板S2之型態稱為基板S。基板S1及基板S2皆使用在俯視下(從Z方向觀看)呈圓形狀之圓形基板，但是不限定於圓形基板，即使為在俯視下呈矩形狀(正方形狀、長方形狀)之角形基板、橢圓形狀、長圓形狀等之基板亦可。The substrate S1 and the substrate S2 are, for example, glass substrates, but they may be semiconductor substrates other than glass substrates, resin substrates, or the like. In this embodiment, among the two substrates to be bonded, the upper substrate is referred to as substrate S1 and the lower substrate is referred to as substrate S2. Furthermore, the type in which the substrate S1 and the substrate S2 are bonded is called the substrate S. Both the substrate S1 and the substrate S2 are circular substrates that are circular in plan view (viewed from the Z direction). However, they are not limited to circular substrates, and may be rectangular substrates (square shape, rectangular shape) in plan view. , elliptical shape, oblong shape, etc. substrates can also be used.

圖2為從上方觀看基板S1及基板S2的圖。如圖2所示般，基板S1及基板S2具有機能區域Af。機能區域Af係在基板S1和基板S2之間，配置有半導體晶片等之元件的區域。機能區域Af係被設置在較基板S1及基板S2之外周緣Se更靠徑向內側。基板S1及基板S2係在機能區域Af之徑向外側具有無配置元件之外周區域As。FIG. 2 is a view of the substrate S1 and the substrate S2 viewed from above. As shown in FIG. 2 , the substrate S1 and the substrate S2 have a functional area Af. The functional area Af is an area between the substrate S1 and the substrate S2 in which components such as semiconductor wafers are arranged. The functional area Af is provided radially inward of the outer peripheral edge Se of the substrate S1 and the substrate S2. The substrate S1 and the substrate S2 have an outer peripheral area As where no components are arranged outside the functional area Af in the radial direction.

如圖1所示般，基板黏貼裝置100具備腔室10、第1平板20、第2平板30、推壓機構50和控制部(無圖示)。控制部(無圖示)係統籌控制在基板黏貼裝置100中之各部之動作。As shown in FIG. 1 , the substrate bonding device 100 includes a chamber 10 , a first flat plate 20 , a second flat plate 30 , a pressing mechanism 50 , and a control unit (not shown). The control unit (not shown) systematically controls the operations of each unit in the substrate pasting device 100 .

腔室10係被配置在基板黏貼裝置100之基台15上。腔室10係被形成具有從基台15之外周部朝上方立起的側壁10a，和覆蓋側壁10a之上方的頂板10b之箱狀。腔室10係在內部收容第1平板20、第2平板30、推壓機構50之一部分。腔室10係在側壁10a之一部分具有開口部11。開口部11係被形成在腔室10之-X側之面，連通腔室10之內部和外部。開口部11係被形成在前工程中經由接著層F暫時被黏貼的基板S1、S2及基板S1、S2被黏貼的基板S之各者能夠通過的尺寸。基板S1、S2係藉由搬運裝置(無圖示)經由開口部11而被搬入至腔室10內。再者，基板S係經由開口部11而從腔室10內被搬出。The chamber 10 is arranged on the base 15 of the substrate bonding device 100 . The chamber 10 is formed in a box shape including a side wall 10a rising upward from the outer peripheral portion of the base 15, and a ceiling plate 10b covering the upper side of the side wall 10a. The chamber 10 accommodates a part of the first plate 20 , the second plate 30 , and the pressing mechanism 50 inside. The chamber 10 has an opening 11 in a part of the side wall 10a. The opening 11 is formed on the −X side surface of the chamber 10 and communicates the inside and outside of the chamber 10 . The opening 11 is formed in a size that can pass through each of the substrates S1 and S2 temporarily adhered via the adhesive layer F in the previous process and the substrate S to which the substrates S1 and S2 are adhered. The substrates S1 and S2 are carried into the chamber 10 through the opening 11 by a transport device (not shown). Furthermore, the substrate S is carried out from the chamber 10 through the opening 11 .

腔室10具備開關開口部11之閘閥12。閘閥12係被配置在腔室10之-X側之側面中之外側，藉由無圖示之驅動部，能夠在例如高度方向(Z方向)滑動。閘閥12係藉由滑動開關開口部11，藉由關閉開口部11，可以使腔室10內成為密閉狀態。The chamber 10 is provided with a gate valve 12 that opens and closes the opening 11 . The gate valve 12 is disposed outside the side surface of the -X side of the chamber 10 and can slide in, for example, the height direction (Z direction) by a driving unit (not shown). The gate valve 12 slides open and closes the opening 11, and the inside of the chamber 10 can be brought into a sealed state by closing the opening 11.

另外，在本實施型態中，藉由關閉開口部11，使腔室10內成為密閉狀態，藉由無圖示之真空泵，使腔室10內成為真空氛圍。藉由該吸引裝置，藉由吸引(排氣)腔室10內，可以使腔室10內成為真空氛圍。而且，即使腔室10具備為了開放內部之真空氛圍，能夠對外部開放的閥體亦可。但是，不限定於將腔室10內設為真空氛圍，即使以閘閥12關閉開口部11，設為使腔室10內成為大氣壓氛圍下的狀態亦可。再者，在腔室10之上面，設置後述複數推壓軸51貫通之複數貫通部10h。在貫通部10h之各者，以推壓軸51能夠升降之狀態被插入，藉由無圖示之密封構件，維持腔室10內之密閉狀態。In addition, in this embodiment, the opening 11 is closed to bring the inside of the chamber 10 into a sealed state, and a vacuum pump (not shown) is used to make the inside of the chamber 10 into a vacuum atmosphere. This suction device can suction (exhaust) the inside of the chamber 10 so that the inside of the chamber 10 can become a vacuum atmosphere. Furthermore, the chamber 10 may be provided with a valve body that can be opened to the outside in order to open the vacuum atmosphere inside. However, the inside of the chamber 10 is not limited to a vacuum atmosphere. The opening 11 may be closed by the gate valve 12 and the inside of the chamber 10 may be in an atmospheric pressure atmosphere. Furthermore, on the upper surface of the chamber 10, a plurality of penetration portions 10h through which a plurality of pressing shafts 51 described later are penetrated are provided. The push shaft 51 is inserted into each of the through portions 10h in a state in which it can move up and down, and a sealed state in the chamber 10 is maintained by a sealing member (not shown).

另外，基板黏貼裝置100是否具備腔室10為任意，即使不具備腔室10之型態(大氣開放型)亦可。再者，即使腔室10內被連接於無圖示之氣體供給裝置亦可。藉由從該氣體供給裝置對腔室10內供給特定氣體，可以將腔室10內之氛圍置換成特定的氣體氛圍。作為特定氣體，使用例如氮氣等之相對於被形成在基板S1、S2之薄膜等呈惰性的氣體，或乾空氣。In addition, it is optional whether the substrate bonding device 100 is provided with the chamber 10, and it may be of a type that does not include the chamber 10 (atmospheric open type). Furthermore, the chamber 10 may be connected to a gas supply device (not shown). By supplying a specific gas into the chamber 10 from the gas supply device, the atmosphere in the chamber 10 can be replaced with a specific gas atmosphere. As the specific gas, for example, a gas that is inert to the thin film formed on the substrates S1 and S2, such as nitrogen, or dry air is used.

第1平板20係從下方支持被搬入至腔室10內之基板S1、S2。第1平板20係從上方觀看呈圓形狀，不限定於該型態，即使為例如矩形狀(正方形狀、長方形狀)、橢圓形狀、長圓形狀等亦可。第1平板20係被設定成大於基板S1、S2的外徑尺寸。The first flat plate 20 supports the substrates S1 and S2 carried into the chamber 10 from below. The first flat plate 20 has a circular shape when viewed from above, and is not limited to this shape. For example, the first flat plate 20 may have a rectangular shape (square shape, rectangular shape), elliptical shape, oval shape, or the like. The first flat plate 20 is set to be larger than the outer diameter of the substrates S1 and S2.

第1平板20具有支持板21、第1加熱器(加熱部)22和基座板23。支持板21、第1加熱器22及基座板23係從下側(-Z側)依序被疊層。第1平板20係藉由被設置在支持板21之下面側的複數根之支柱24而被支持，經由支柱24而被固定於基台15之上面。支持板21和第1加熱器22之間，及第1加熱器22和基座板23之間藉由例如螺桿等之締結構件而被固定。The first flat plate 20 has a support plate 21 , a first heater (heating section) 22 and a base plate 23 . The support plate 21, the first heater 22, and the base plate 23 are stacked in order from the lower side (-Z side). The first flat plate 20 is supported by a plurality of pillars 24 provided on the lower surface side of the support plate 21 and is fixed to the upper surface of the base 15 via the pillars 24 . The support plate 21 and the first heater 22 and the first heater 22 and the base plate 23 are fixed by connecting members such as screws.

支持板21係藉由例如金屬、樹脂、陶瓷等之材質而被形成的板狀體。第1加熱器22係加熱部之一例，例如在內部具有電熱線等之加熱機構(熱源)的熱板。藉由第1加熱器22，經由基座板23而加熱基板S1、S2。另外，即使第1加熱器22為夾著片狀之熱源而被疊層的疊層構造體亦可。再者，在本實施型態中，雖然第1平板20具有第1加熱器22，但是即使設為不具有的構成亦可。The support plate 21 is a plate-shaped body formed of a material such as metal, resin, ceramics, or the like. The first heater 22 is an example of a heating part, such as a hot plate having a heating mechanism (heat source) such as a heating wire inside. The first heater 22 heats the substrates S1 and S2 via the base plate 23 . In addition, the first heater 22 may be a laminated structure laminated with sheet-shaped heat sources sandwiched between them. In addition, in this embodiment, although the first flat plate 20 has the first heater 22, it may be configured not to have the first heater 22.

基座板23係在作為上面之+Z側之載置面23a載置基板S1、S2及基板S。因基座板23係用以緩和基板S1、S2及基板S之熱膨脹係數，故雖然使用例如以陶瓷形成板狀之陶瓷板，但是即使以金屬、樹脂等形成亦可。基座板23之載置面23a係成為與基板S2的接觸面。因此，載置面23a係以平面度高且表面粗糙度小(或鏡面)為佳。The base plate 23 places the substrates S1, S2 and the substrate S on the +Z side mounting surface 23a which is the upper surface. Since the base plate 23 is used to relax the thermal expansion coefficient of the substrates S1, S2 and the substrate S, for example, a ceramic plate formed of ceramic is used, but it may be formed of metal, resin, or the like. The mounting surface 23a of the base plate 23 serves as a contact surface with the substrate S2. Therefore, it is preferable that the mounting surface 23a has high flatness and small surface roughness (or mirror surface).

支柱24係被設置複數根在支持板21之下面。複數支柱24係被使用於將第1平板20支持於腔室10之底部的基台15。複數支柱24係被配置在支持板21之外周部。雖然支柱24從上方觀看呈矩形狀，但是即使為圓形狀、橢圓形狀、長圓形狀等亦可。支柱24係在支持板21之圓周方向隔著間隔而配置複數個。在本實施型態中，支柱24係在圓周方向隔著間隔而配置6個。藉由以複數根之支柱24支持第1平板20，即使為推壓機構50所致的推壓力大之情況，亦防止第1平板20之變形。另外，複數根之支柱24之根數及配置，不被限定於上述型態，可以藉由第1平板20之大小、使用的推壓力之大小等而任意設定。A plurality of pillars 24 are provided below the support plate 21 . The plurality of supports 24 are used to support the first flat plate 20 on the base 15 at the bottom of the chamber 10 . The plurality of pillars 24 are arranged on the outer peripheral portion of the support plate 21 . Although the pillar 24 has a rectangular shape when viewed from above, it may also have a circular shape, an elliptical shape, an oval shape, or the like. A plurality of pillars 24 are arranged at intervals in the circumferential direction of the support plate 21 . In this embodiment, six pillars 24 are arranged at intervals in the circumferential direction. By supporting the first flat plate 20 with the plurality of pillars 24, the first flat plate 20 is prevented from being deformed even if the pressing force caused by the pressing mechanism 50 is large. In addition, the number and arrangement of the plurality of pillars 24 are not limited to the above-mentioned types, and can be set arbitrarily according to the size of the first flat plate 20, the size of the pressing force used, and the like.

圖3為使第2平板30下降，使抵接片35抵接於基板S1、S2之狀態的縱剖面圖。如圖3所示般，第2平板30係於黏貼基板S1和基板S2之時，朝向第1平板20側(-Z側)推壓基板S1、S2。第2平板30係被配置在第1平板20之上側。第2平板30係與第1平板20相同，從上方觀看呈圓形狀，不限定於該型態，即使為例如矩形狀(正方形狀、長方形狀)、橢圓形狀、長圓形狀等亦可。第2平板30係被設定成大於基板S1、S2的外徑尺寸。雖然第2平板30之外徑尺寸與第1平板20相同，但是不被限定於該型態。例如，即使第2平板30相對於第1平板20外徑尺寸較大亦可，即使較小亦可。FIG. 3 is a longitudinal cross-sectional view of the state in which the second flat plate 30 is lowered and the contact piece 35 is brought into contact with the substrates S1 and S2. As shown in FIG. 3 , when the substrate S1 and the substrate S2 are bonded, the second flat plate 30 presses the substrates S1 and S2 toward the first flat plate 20 side (-Z side). The second flat plate 30 is arranged above the first flat plate 20 . The second flat plate 30 is similar to the first flat plate 20 and has a circular shape when viewed from above. The second flat plate 30 is not limited to this shape and may have a rectangular shape (square shape, rectangular shape), elliptical shape, oval shape, etc., for example. The second flat plate 30 is set to be larger than the outer diameter of the substrates S1 and S2. Although the outer diameter size of the second flat plate 30 is the same as that of the first flat plate 20, it is not limited to this type. For example, the outer diameter of the second flat plate 30 may be larger or smaller than that of the first flat plate 20 .

第2平板30係被保持於後述推壓機構50之推壓軸51之下端，隨著推壓軸51之升降而升降。第2平板30具備平板本體31、抵接片35。平板主體31具備受壓板32、第2加熱器(加熱部)33和加壓板34。受壓板32、第2加熱器33、加熱板34及抵接片35係從上側依序被疊層。受壓板32、第2加熱器33及加壓板34之各者為俯視下呈圓形之板狀，具有相同的外徑。構成平板主體31之受壓板32、第2加熱器33、加壓板34係藉由例如螺桿等之締結構件而被固定。The second flat plate 30 is held at the lower end of the pressing shaft 51 of the pressing mechanism 50 described below, and rises and falls as the pressing shaft 51 rises and falls. The second flat plate 30 includes a flat plate body 31 and a contact piece 35 . The flat plate main body 31 includes a pressure receiving plate 32 , a second heater (heating section) 33 , and a pressure plate 34 . The pressure receiving plate 32, the second heater 33, the heating plate 34, and the contact piece 35 are laminated in this order from the upper side. Each of the pressure receiving plate 32, the second heater 33, and the pressure plate 34 has a circular plate shape in plan view and has the same outer diameter. The pressure receiving plate 32, the second heater 33, and the pressure plate 34 constituting the flat plate main body 31 are fixed by a connecting member such as a screw.

受壓板32係被配置在推壓機構50側，即是上側。受壓板32係被連接於推壓機構50之推壓軸51之下端部。因受壓板32係從推壓機構50之推壓軸51接受推壓力，故以特定強度形成為佳。受壓板32係例如藉由金屬、樹脂、陶瓷等形成。在本實施型態中，受壓板32為金屬板。The pressure receiving plate 32 is arranged on the pressing mechanism 50 side, that is, on the upper side. The pressure plate 32 is connected to the lower end of the pressing shaft 51 of the pressing mechanism 50 . Since the pressure-receiving plate 32 receives the pressing force from the pressing shaft 51 of the pressing mechanism 50, it is preferably formed with a specific strength. The pressure-receiving plate 32 is formed of, for example, metal, resin, ceramics, or the like. In this embodiment, the pressure plate 32 is a metal plate.

第2加熱器33係被配置在加壓板34和受壓板32之間。第2加熱器33係被配置在加壓板34之上面。第2加熱器33係與第1平板20之第1加熱器22相同，為例如在內部具有電熱線之加熱機構(熱源)的熱板。第2加熱器(無圖示)係經由加壓板34而加熱基板S1。另外，即使第2加熱器(無圖示)與第1加熱器22相同夾著薄片狀之熱源而被疊層的疊層構造體亦可。再者，在本實施型態中，雖然平板主體31具備第2加熱器33，但是即使為不具備的構成亦可。The second heater 33 is arranged between the pressure plate 34 and the pressure receiving plate 32 . The second heater 33 is arranged above the pressure plate 34 . The second heater 33 is the same as the first heater 22 of the first flat plate 20 and is, for example, a hot plate having a heating mechanism (heat source) of a heating wire inside. The second heater (not shown) heats the substrate S1 via the pressure plate 34 . In addition, the second heater (not shown) may be a laminated structure laminated with a sheet-shaped heat source sandwiched between the first heater 22 and the first heater 22 . Furthermore, in this embodiment, the flat panel main body 31 is provided with the second heater 33, but it may be configured without the second heater 33.

加壓板34係被設置在第2加熱器33之下側。加壓板34係在-Z側之下面具備用以從上方加壓基板S1之加壓面34a。加壓板34係用以緩和基板S1、S2及基板S之熱膨脹係數，故雖然使用例如以陶瓷形成板狀之陶瓷板，但是即使以金屬、樹脂等形成板狀亦可。The pressure plate 34 is provided below the second heater 33 . The pressure plate 34 is provided below the -Z side to provide a pressure surface 34a for pressurizing the substrate S1 from above. The pressing plate 34 is used to relax the thermal expansion coefficient of the substrates S1, S2 and the substrate S. Therefore, for example, a ceramic plate formed of ceramic is used, but it may be formed of metal, resin, or the like.

抵接片35係被支持於平板本體31。抵接片35係相對於平板本體31被設置在第1平板20側，即是下側。抵接片35係沿著加壓板34之加壓面34a而被固定。抵接片35係藉由例如接著、吸附等，被固定在加壓面34a。抵接片35係以被構成藉由適當的手段，能對加壓面34a安裝拆卸為佳。抵接片35具有朝下側，抵接於基板S1之抵接面35f。The contact piece 35 is supported by the flat plate body 31 . The contact piece 35 is provided on the first flat plate 20 side, that is, on the lower side relative to the flat plate body 31 . The contact piece 35 is fixed along the pressing surface 34a of the pressing plate 34. The contact piece 35 is fixed to the pressure surface 34a by, for example, adhesion, suction, or the like. The contact piece 35 is preferably configured to be attachable and detachable to the pressurizing surface 34a by appropriate means. The contact piece 35 has a downward side and is in contact with the contact surface 35f of the substrate S1.

抵接片35不限於從下方觀看被形成圓形之圓形。即使例如在俯視下呈矩形狀(正方形狀、長方形狀)之角形基板、橢圓形狀、長圓形狀等亦可。抵接片35係藉由具有較平板本體31更高之柔軟性之能變形的材料形成。藉由使加壓板34下降，於對基板S1、S2施加荷重之時，推壓機構50所致的推壓力，從受壓板32經由第2加熱器33、加壓板34、抵接片35而被傳達至複數基板S1、S2。此時，抵接片35係藉由推壓力在上下方向(薄片厚度方向)變形，依此謀求作用於基板S1、S2之壓力變動幅度的均勻化。The contact piece 35 is not limited to a circular shape when viewed from below. For example, an angular substrate having a rectangular shape (square shape, rectangular shape) in plan view, an elliptical shape, an oval shape, etc. may be used. The contact piece 35 is formed of a deformable material with higher flexibility than the flat plate body 31 . By lowering the pressure plate 34, when a load is applied to the substrates S1 and S2, the pressing force caused by the pressing mechanism 50 passes from the pressure receiving plate 32 through the second heater 33, the pressure plate 34, and the contact piece. 35 and is transmitted to the plurality of substrates S1 and S2. At this time, the contact piece 35 is deformed in the up-and-down direction (sheet thickness direction) by the pressing force, thereby making the pressure fluctuation range acting on the substrates S1 and S2 uniform.

因此，抵接片35係包含具有較平板主體31更低之壓縮楊氏係數的材料而形成。在平板主體31中，被配置在抵接片35之上側的加壓板34係在例如陶瓷製之情況，其壓縮楊氏係數為300000(MPa)。再者，在平板主體31之加壓板34為例如不鏽鋼製之情況，壓縮楊氏係數E為193000(MPa)。即是，加壓板34係對基板S1、S2施加荷重之時在加壓面34a產生的上下方向中之位移量(變形量)幾乎不產生。對此，在抵接片35中，以加壓板34施加荷重之時，為了謀求作用於基板S1、S2之壓力變動幅度之均勻化，以抵接片35使用滿足以下所示之條件的材料為佳。Therefore, the contact piece 35 is formed of a material having a lower compression Young's modulus than that of the flat plate body 31 . In the flat plate main body 31, the pressure plate 34 arranged on the upper side of the contact piece 35 is made of ceramic, for example, and has a compression Young's coefficient of 300000 (MPa). In addition, when the pressure plate 34 of the flat plate main body 31 is made of stainless steel, for example, the compression Young's coefficient E is 193000 (MPa). That is, when the pressure plate 34 applies a load to the substrates S1 and S2, almost no displacement (deformation amount) occurs in the up-down direction of the pressure surface 34a. In this regard, in order to equalize the range of pressure fluctuations acting on the substrates S1 and S2 when the pressure plate 34 applies a load to the contact piece 35 , a material satisfying the following conditions is used for the contact piece 35 . Better.

例如，抵接片35係以暫時固定在基板S1、S2或不固定為佳，即是，如本實施型態所示般，以被支持於平板本體31者為佳，以包含在每單位面積1.0t之荷重被施加於基板S1、S2之時，在荷重之方向以50um以上360um以下之範圍位移(變形)的材料而形成為佳。每單位面積1.0t之荷重被施加於基板S1、S2之時的抵接片35之位移量，低於上述範圍之情況，施加荷重之時之抵接片35之位移變少，無法取得充分的壓力均勻化效果。再者，在每單位面積1.0t之荷重被施加於基板S1、S2之時之抵接片35之位移量，在高於上述範圍之情況，有無法對基板S1、S2施加充分的荷重之可能性。For example, the contact piece 35 is preferably temporarily fixed to the substrates S1 and S2 or is not fixed. That is, as shown in this embodiment, it is preferably supported on the flat plate body 31 so as to be included in each unit area. When a load of 1.0t is applied to the substrates S1 and S2, it is preferably formed of a material that displaces (deforms) in a range of 50um to 360um in the direction of the load. If the displacement amount of the contact piece 35 when a load of 1.0 tons per unit area is applied to the substrates S1 and S2 is lower than the above range, the displacement of the contact piece 35 when the load is applied becomes small, and sufficient results cannot be obtained. Pressure equalization effect. Furthermore, when the displacement amount of the contact piece 35 when a load of 1.0t per unit area is applied to the substrates S1 and S2 is higher than the above range, there is a possibility that a sufficient load cannot be applied to the substrates S1 and S2. sex.

另外，作為每單位面積之荷重，雖然例示1.0t，但是不限於此。實際上，即使配合以基板黏貼裝置100進行基板S1、S2之黏貼之時的荷重，使荷重適當變化亦可。再者，抵接片35係由具有承受第2加熱器33所致之加熱溫度的耐熱性之材料形成為佳。第2加熱器33所致的加熱溫度為例如150℃程度。In addition, although 1.0t is exemplified as the load per unit area, it is not limited to this. In fact, the load may be appropriately changed according to the load when the substrates S1 and S2 are adhered by the substrate pasting device 100 . Furthermore, the contact piece 35 is preferably made of a material that has heat resistance to withstand the heating temperature caused by the second heater 33 . The heating temperature by the second heater 33 is, for example, approximately 150°C.

例如，抵接片35係以壓縮楊氏係數為例如0.2~2MPa之材料而形成為佳。抵接片35之壓縮楊氏係數之較佳範圍為0.3~0.9MPa。例如，壓縮楊氏係數高於上述範圍之情況，有施加荷重之情況的位移變少，無法取得充分的壓力均勻化效果之情況。另一方面，在壓縮楊氏係數低於上述範圍之情況，仍有無法對基板S1、S2之一部分或全部施加充分的荷重之可能性。For example, the contact piece 35 is preferably formed of a material having a compressed Young's coefficient of, for example, 0.2 to 2 MPa. The preferred range of the compression Young's coefficient of the contact piece 35 is 0.3~0.9MPa. For example, if the compression Young's coefficient is higher than the above range, the displacement when a load is applied may be reduced, and a sufficient pressure uniformizing effect may not be obtained. On the other hand, when the compressive Young's coefficient is lower than the above range, there is still a possibility that a sufficient load cannot be applied to part or all of the substrates S1 and S2.

再者，例如，抵接片35係以橡膠硬度為例如5~36之材料而形成為佳。抵接片35之橡膠硬度之更佳範圍為15~36，更佳的範圍為20~30。例如，橡膠硬度高於上述範圍之情況，有無法取得出充分的壓力均勻化效果之情況。另一方面，在橡膠硬度低於上述範圍之情況，仍有無法對基板S1、S2之一部分或全部施加充分的荷重之可能性。再者，例如抵接片35係以包含多孔質材料形成為佳。藉由包含多孔質材料形成抵接片35，容易取得壓力均勻化效果。另外，針對在本實施型態使用的橡膠硬度，為使用依據JIS K 7312的C型硬度計而測量出的數值。Furthermore, for example, the contact piece 35 is preferably formed of a material with a rubber hardness of 5 to 36, for example. The preferred range of rubber hardness of the contact piece 35 is 15~36, and the preferred range is 20~30. For example, if the rubber hardness is higher than the above range, sufficient pressure equalization effect may not be obtained. On the other hand, when the rubber hardness is lower than the above range, there is still a possibility that a sufficient load cannot be applied to part or all of the substrates S1 and S2. Furthermore, for example, the contact piece 35 is preferably formed of a porous material. By forming the contact piece 35 from a porous material, the pressure uniformity effect can be easily achieved. In addition, the rubber hardness used in this embodiment is a value measured using a type C durometer in accordance with JIS K 7312.

再者，以基板黏貼裝置100量產基板S之情況，抵接片35係以在重複作用荷重之情況，即使上述般之各條件經過某一定的次數，其性能也不會顯著下降為佳。作為滿足該些各條件，抵接片35所使用之素材，可以使用例如氟海綿(附基材)。另外，若為不進行複數次基板黏貼處理之情況，作為抵接片35所使用之素材，也可以使用PTFE(聚四氟乙烯)製墊圈。Furthermore, when the substrate sticking device 100 is used to mass-produce the substrate S, it is preferable that the performance of the contact piece 35 will not be significantly degraded even if the above-mentioned conditions are passed a certain number of times when the load is repeatedly applied. As a material used for the contact piece 35 that satisfies these conditions, for example, fluorine sponge (with base material) can be used. In addition, if the substrate bonding process is not performed multiple times, a PTFE (polytetrafluoroethylene) gasket may be used as the material used for the contact piece 35 .

再者，例如，抵接片35係以厚度為例如0.5mm以上2.0mm以下包含材料而形成為佳。抵接片35之厚度的較佳範圍為0.5mm以上1.5mm以下。例如，抵接片35之厚度高於上述範圍之情況，於施加荷重之時，第2加熱器33所致的熱難傳達至基板S1、S2。再者，在抵接片35之厚度低於上述範圍之情況，施加荷重之時的抵接片35之位移少，無法取得充分的壓力均勻化效果。Furthermore, for example, the contact piece 35 is preferably formed of a material with a thickness of, for example, 0.5 mm to 2.0 mm. The preferred range of the thickness of the contact piece 35 is 0.5 mm or more and 1.5 mm or less. For example, when the thickness of the contact piece 35 is higher than the above range, the heat generated by the second heater 33 is difficult to be transmitted to the substrates S1 and S2 when a load is applied. Furthermore, when the thickness of the contact piece 35 is less than the above range, the displacement of the contact piece 35 when a load is applied is small, and a sufficient pressure uniformizing effect cannot be obtained.

再者，即使在抵接片35之上面及下面之至少一方，形成例如提高從基板S1的離型性等的具有機能性的基材亦可。即使基材為覆膜等亦可。例如，即使在抵接片35之上面及下面之至少一方，形成例如聚醯亞胺層亦可。Furthermore, a functional base material may be formed on at least one of the upper surface and the lower surface of the contact piece 35, for example, to improve the release property from the substrate S1. The base material may be a coating or the like. For example, a polyimide layer may be formed on at least one of the upper surface and the lower surface of the contact piece 35 .

抵接片35之外形(外徑)尺寸係被設定為小於基板S1、S2之外形尺寸。依此，於抵接片35抵接於基板S1、S2之時，基板S1、S2之外周部突出至抵接面35之外側。當將抵接片35之外形(外徑)尺寸設為大於基板S1、S2之外形尺寸時，抵接片35之外周部較基板S1、S2更突出至徑向外側。如此一來，在重複基板S1、S2之加壓的時候，抵接片35之外周部不位移，在其內側抵接於基板S1、S2之部分藉由重複的位移被壓扁。其結果，藉由抵接片35和基板S1、S2之位置偏移等，若抵接片35之外周部之不被壓扁的部分，抵接於基板S1、S2時，在其部分，有過度被施加大的壓力之可能性。即使將抵接片35之外徑尺寸設為與基板S1、S2之外徑尺寸相同之情況，也有產生相同之問題的可能性。The outer dimensions (outer diameter) of the contact piece 35 are set smaller than the outer dimensions of the substrates S1 and S2. Accordingly, when the contact piece 35 is in contact with the substrates S1 and S2, the outer peripheral portions of the substrates S1 and S2 protrude to the outside of the contact surface 35. When the outer dimension (outer diameter) of the contact piece 35 is larger than the outer dimensions of the substrates S1 and S2, the outer peripheral portion of the contact piece 35 protrudes radially outward from the substrates S1 and S2. In this way, when the pressing of the substrates S1 and S2 is repeated, the outer peripheral portion of the contact piece 35 is not displaced, and the portion of the contact piece 35 that is in contact with the substrates S1 and S2 is flattened by the repeated displacement. As a result, due to the positional deviation between the contact piece 35 and the substrates S1 and S2, etc., if the portion of the outer peripheral portion of the contact piece 35 that is not crushed comes into contact with the substrates S1 and S2, there will be Possibility of excessive pressure being exerted. Even if the outer diameter of the contact piece 35 is set to be the same as the outer diameter of the substrates S1 and S2 , the same problem may occur.

抵接片35係以被形成覆蓋基板S1、S2之機能區域Af為佳。即是，抵接片35之外徑尺寸係設定為大於機能區域Af之外徑尺寸為佳。依此，在加壓時，抵接片35之全體抵接於機能區域Af，可以有效地謀求壓力之均勻化。The contact piece 35 is preferably formed to cover the functional area Af of the substrates S1 and S2. That is, the outer diameter of the contact piece 35 is preferably set to be larger than the outer diameter of the functional area Af. Accordingly, during pressurization, the entire contact piece 35 is in contact with the functional area Af, so that the pressure can be effectively equalized.

推壓機構50係使第2平板30下降，黏貼基板S1和基板S2之時，朝向基板S2側(第1平板20側)推壓基板S1。如圖1所示般，推壓機構50具備推壓軸51、使推壓軸51驅動的驅動部(無圖示)。推壓軸51係從上方觀看被配置在受壓板32之中央部，對受壓板32之中央部施加荷重(推壓力)。The pressing mechanism 50 lowers the second flat plate 30 and presses the substrate S1 toward the substrate S2 side (the first flat plate 20 side) when the substrate S1 and the substrate S2 are bonded. As shown in FIG. 1 , the pressing mechanism 50 includes a pressing shaft 51 and a driving part (not shown) that drives the pressing shaft 51 . The pressing shaft 51 is arranged at the center of the pressure-receiving plate 32 when viewed from above, and applies a load (pressing force) to the center of the pressure-receiving plate 32 .

推壓軸51係經由貫通部10h而被插入至腔室10內。推壓軸51之各者為圓形剖面的棒狀體，藉由不會因被施加的荷重而變形，或變形被抑制的外徑及材質(例如，金屬、樹脂、陶瓷等)形成。驅動部(無圖示)係驅動推壓軸51。驅動部係例如使用汽缸裝置、油壓汽缸裝置、使用電動旋轉馬達的滾珠螺桿機構等。The pressing shaft 51 is inserted into the chamber 10 via the penetration portion 10h. Each of the pressing shafts 51 is a rod-shaped body with a circular cross-section, and is formed with an outer diameter and material (for example, metal, resin, ceramics, etc.) that does not deform due to an applied load or suppresses deformation. The driving part (not shown) drives the pressing shaft 51 . The drive unit may use, for example, a cylinder device, a hydraulic cylinder device, a ball screw mechanism using an electric rotary motor, or the like.

驅動部係藉由控制部(無圖示)而被控制。藉由驅動部(無圖示)施加至推壓軸51之荷重及施加荷重之驅動時序，係根據事先設定的程式等而藉由控制部(無圖示)被統籌控制。再者，即使驅動部(無圖示)之動作之一部分或全部藉由操作者所致的操作而進行亦可。The driving unit is controlled by a control unit (not shown). The load applied to the pressing shaft 51 by the driving unit (not shown) and the driving timing of applying the load are collectively controlled by the control unit (not shown) based on a preset program or the like. Furthermore, part or all of the operation of the driving unit (not shown) may be performed by an operator's operation.

＜基板黏貼方法＞ 接著，針對與本實施型態有關之基板黏貼方法進行說明。圖4為表示本實施型態所涉及之基板黏貼方法之一例的流程圖。該基板黏貼方法係藉由例如來自控制部(無圖示)之指示而被實行。圖5至圖8為表示基板黏貼裝置100之動作之一例的工程圖。另外，在該些工程圖中，以容易理解各部之動作之方式，簡化記載。以下，沿著圖4之流程圖予以說明。 ＜Substrate bonding method＞ Next, the substrate bonding method related to this embodiment will be described. FIG. 4 is a flowchart showing an example of a substrate bonding method according to this embodiment. This substrate bonding method is executed by instructions from a control unit (not shown), for example. 5 to 8 are engineering diagrams showing an example of the operation of the substrate bonding device 100. In addition, in these engineering drawings, descriptions are simplified so that the operation of each part can be easily understood. The following is explained along the flowchart of FIG. 4 .

首先，開啟腔室10之閘閥12，搬入基板S(步驟S01)。如圖5所示般，控制部(無圖示)係使無圖示之驅動部驅動而使閘閥12上升，開放開口部11。接著，藉由搬運裝置(無圖示)，將在前工程事先經由接著層F而重疊的複數基板S1、S2搬入至腔室10內。此時，第2平板30係相對於第1平板20朝上方間隔開。搬運裝置(無圖示)係在保持基板S1、S2之狀態下從開口部11進入至腔室10之內部，將重疊的基板S1、S2載置於第1平板20之基座板23上(步驟S02)。First, the gate valve 12 of the chamber 10 is opened and the substrate S is loaded in (step S01). As shown in FIG. 5 , the control unit (not shown) drives a driving unit (not shown) to raise the gate valve 12 and open the opening 11 . Next, a plurality of substrates S1 and S2 that have been stacked in advance through the adhesive layer F in the previous process are carried into the chamber 10 by a conveying device (not shown). At this time, the second flat plate 30 is spaced upward relative to the first flat plate 20 . The conveying device (not shown) enters the inside of the chamber 10 from the opening 11 while holding the substrates S1 and S2, and places the overlapping substrates S1 and S2 on the base plate 23 of the first flat plate 20 ( Step S02).

接著，如圖6所示般，關閉閘閥12，藉由無圖示之吸引裝置排氣腔室10內，例如將腔室10內設為真空氛圍(步驟S03)。另外，即使取代將腔室10內設為真空氛圍，以邊藉由無圖示之吸引裝置，排氣腔室10內，邊對腔室10內供給潔淨氣體，例如將腔室10內在大氣壓條件下置換成潔淨氣體亦可。Next, as shown in FIG. 6 , the gate valve 12 is closed, and the inside of the chamber 10 is evacuated through a suction device (not shown), for example, to make the inside of the chamber 10 a vacuum atmosphere (step S03 ). In addition, even if the inside of the chamber 10 is replaced with a vacuum atmosphere, the inside of the chamber 10 is exhausted through a suction device (not shown) while supplying clean gas into the chamber 10 , for example, the inside of the chamber 10 is set to atmospheric pressure conditions. It can also be replaced by clean gas.

接著，控制部(無圖示)係如圖7所示般，使驅動部(無圖示)驅動而使第2平板30與推壓軸51同時下降，使第2平板30之加壓板34抵接於被支持於第1平板20之基座板23上的基板S1、S2(步驟S04)。接著，在該狀態，藉由第1加熱器22及第2加熱器(無圖示)將基板S1、S2加熱特定時間而進行預熱處理。預熱處理係使第1加熱器22及第2加熱器(無圖示)之溫度從例如150℃成為250℃而進行。Next, as shown in FIG. 7 , the control part (not shown) drives the driving part (not shown) to lower the second flat plate 30 and the pressing shaft 51 simultaneously, causing the pressing plate 34 of the second flat plate 30 to abut. It is connected to the substrates S1 and S2 supported on the base plate 23 of the first flat plate 20 (step S04). Next, in this state, the substrates S1 and S2 are heated for a specific time by the first heater 22 and the second heater (not shown) to perform a preheating process. The preheating process is performed by changing the temperature of the first heater 22 and the second heater (not shown) from, for example, 150°C to 250°C.

接著，以推壓軸51施加荷重，黏貼基板S1和基板S2(步驟S05)。控制部(無圖示)係使驅動部(無圖示)驅動而使第2平板30與推壓軸51同時下降，在第1平板20和第2平板30之間推壓基板S1和基板S2，依此黏貼基板S1和基板S2。此時，持續第1加熱器22及第2加熱器(無圖示)所致的加熱，即使使第1平板20及第2平板30保持在特定溫度亦可。基板S1和基板S2係接著層F藉由熱熔解而被接著，而且，藉由第2平板30所致的從基板S1側的推壓，基板S1和基板S2強固被黏貼。Next, a load is applied with the pressing shaft 51, and the substrate S1 and the substrate S2 are bonded together (step S05). The control part (not shown) drives the driving part (not shown) to lower the second flat plate 30 and the pressing shaft 51 simultaneously, and presses the substrate S1 and the substrate S2 between the first flat plate 20 and the second flat plate 30. In this way, attach the substrate S1 and the substrate S2. At this time, heating by the first heater 22 and the second heater (not shown) may be continued, and the first flat plate 20 and the second flat plate 30 may be maintained at a specific temperature. The substrate S1 and the substrate S2 are adhered by thermal melting of the adhesive layer F, and the substrate S1 and the substrate S2 are firmly adhered by the pressure from the substrate S1 side by the second flat plate 30 .

於基板S1和基板S2之黏貼完成後，如圖8所示般，使驅動部(無圖示)驅動而使第2平板30與推壓軸51同時上升(步驟S06)。之後，如圖9所示般，開啟閘閥12而將基板S從腔室10搬出(步驟S07)。於使閘閥12上升而開啟開口部11之後，以搬運裝置(無圖示)，將被載置於第1平板20之支持板21上的基板S搬出至腔室10之外部。之後，控制部(無圖示)係關閘閥12而結束一連串的處理。After the bonding of the substrate S1 and the substrate S2 is completed, as shown in FIG. 8 , the driving part (not shown) is driven to raise the second flat plate 30 and the pressing shaft 51 simultaneously (step S06 ). Thereafter, as shown in FIG. 9 , the gate valve 12 is opened and the substrate S is carried out from the chamber 10 (step S07 ). After the gate valve 12 is raised to open the opening 11, the substrate S placed on the support plate 21 of the first flat plate 20 is carried out to the outside of the chamber 10 using a transport device (not shown). After that, the control unit (not shown) closes the gate valve 12 and ends a series of processes.

如上述般，因本實施型態所涉及之基板黏貼裝置100包含抵接片35，故推壓機構50所致的推壓力，係從平板本體31經由抵接片35而被傳達至複數基板S1、S2。抵接片35具有高於平板本體31之柔軟性而能夠變形。依此，推壓機構50所致的推壓力更均勻地傳達至第2加熱器33。因此，若藉由本實施型態所涉及之基板黏貼裝置100時，可以謀求被施加於複數基板S1、S2彼此之接合面的加壓力的均勻化。As mentioned above, since the substrate bonding device 100 according to this embodiment includes the contact piece 35, the pressing force caused by the pressing mechanism 50 is transmitted from the tablet body 31 to the plurality of substrates S1 through the contact piece 35. , S2. The contact piece 35 has higher flexibility than the flat plate body 31 and can be deformed. Accordingly, the pressing force caused by the pressing mechanism 50 is transmitted to the second heater 33 more uniformly. Therefore, by using the substrate bonding device 100 according to this embodiment, it is possible to make the pressure applied to the joint surfaces of the plurality of substrates S1 and S2 uniform.

(實施例) 接著，因針對上述般之抵接片35所使用的複數材料，進行性能評估，故以下表示其結果。 在此，作為抵接片35所使用的薄片材料，使用下述般者。 試驗體1：厚度1mm之氟海綿(附基材) 試驗體2：厚度0.5mm之PTFE(聚四氟乙烯)製墊圈 試驗體3：厚度1mm之PTFE(聚四氟乙烯)製墊圈 比較例：不使用抵接片 (Example) Next, performance evaluation was performed on a plurality of materials used for the contact piece 35 as described above, and the results are shown below. Here, as the sheet material used for the contact piece 35, the following ones are used. Test body 1: Fluorine sponge with a thickness of 1mm (with base material) Test body 2: Gasket made of PTFE (polytetrafluoroethylene) with a thickness of 0.5mm Test body 3: PTFE (polytetrafluoroethylene) gasket with a thickness of 1mm Comparative example: No contact piece is used

將上述試驗體1~3之薄片材料之各者，以壓力變動幅度計測量基板黏貼裝置100在第1平板20和第2平板之間夾入基板S1、S2，施加4000kgf之荷重之時的薄片材料中之壓力變動幅度。再者，作為比較例，不使用抵接片35，以壓力變動幅度計測量基板黏貼裝置100在第1平板20和第2平板之間夾入基板S1、S2，施加4000kgf之荷重之時的壓力變動幅度。For each of the sheet materials of the above-mentioned test objects 1 to 3, the thickness of the sheet when the substrate bonding device 100 sandwiched the substrates S1 and S2 between the first flat plate 20 and the second flat plate and applied a load of 4000kgf was measured using a pressure fluctuation meter. The range of pressure changes in the material. Furthermore, as a comparative example, without using the contact piece 35, the pressure when the substrate bonding device 100 sandwiched the substrates S1 and S2 between the first flat plate 20 and the second flat plate and applied a load of 4000kgf was measured using a pressure fluctuation meter. Range of change.

圖10為表示薄片材料之評估結果的圖。在此，以下式(1)求出示試驗體1~3之薄片材料之壓縮楊氏係數，表示於圖10。 在此，F為荷重，A為薄片材料之平面積，L為薄片材料之厚度，ΔL為薄片材料之厚度的位移量。另外，比較例中之壓縮楊氏係數係構成平板(第2平板)之不鏽鋼的值。 FIG. 10 is a graph showing evaluation results of sheet materials. Here, the compressive Young's coefficient of the sheet material of Test Samples 1 to 3 was calculated using the following equation (1), and is shown in Figure 10 . Here, F is the load, A is the plane area of the sheet material, L is the thickness of the sheet material, and ΔL is the displacement amount of the thickness of the sheet material. In addition, the compressive Young's coefficient in the comparative example is the value of the stainless steel constituting the flat plate (second flat plate).

如圖10所示般，針對試驗體1~3，分別以壓縮楊氏係數、施加1ton荷重時之薄片材料之耐久性、重複1ton之荷重且施加500次之時的作用於薄片材料之壓力之最小值和最大值之差(壓力變動幅度)之各者與不使用薄片材料之比較例進行比較，充分滿足各條件。在此，耐久性之判斷係藉由壓力變動幅度而判斷。此係藉由重複荷重，薄片完全被壓扁，當提升壓力均勻性之效果消失時，則取決於壓力變動幅度變大。針對試驗體1~3，比起比較例，因壓力變動幅度顯著較小，故可以判斷為作為薄片材料充分具有耐久性。As shown in Figure 10, for test specimens 1 to 3, the compressive Young's coefficient, the durability of the sheet material when a load of 1 ton is applied, and the pressure acting on the sheet material when a load of 1 ton is repeated and applied 500 times are calculated. The difference between the minimum value and the maximum value (pressure fluctuation range) was compared with a comparative example that did not use a sheet material, and it was found that each condition was fully satisfied. Here, the durability is judged by the pressure fluctuation range. This is because the sheet is completely flattened by repeated loading. When the effect of improving pressure uniformity disappears, the pressure fluctuation range becomes larger. For test specimens 1 to 3, since the pressure fluctuation range is significantly smaller than that of the comparative example, it can be judged that the specimens have sufficient durability as a sheet material.

以上，雖然針對實施型態予以說明，但是本發明不限定於上述說明，能在不脫離本發明之主旨的範圍進行各種變更。例如，在上述實施型態中，雖然說舉出藉由推壓機構50使被配置在上側的第2平板30移動，在第2平板30具備抵接片35之構成為例，但是並不限定於此。例如，即使為藉由推壓機構50使被配置在下側的第1平板20移動，在該第1平板20具備抵接片35的構成亦可。The embodiments have been described above. However, the present invention is not limited to the above description, and various changes can be made without departing from the gist of the present invention. For example, in the above-mentioned embodiment, the second flat plate 30 arranged on the upper side is moved by the pressing mechanism 50 and the second flat plate 30 is provided with the contact piece 35 as an example. However, this is not limiting. Here it is. For example, even if the first flat plate 20 arranged on the lower side is moved by the pressing mechanism 50 , the first flat plate 20 may be provided with the contact piece 35 .

再者，在上述實施型態中，雖然舉出以基板黏貼裝置100黏貼在前工程經由接著層F暫時被黏貼的基板S1、S2之構成為例予以說明，但是不限定於此。例如，即使為以基板黏貼裝置100，依序搬入基板S1、S2，經由接著層F黏貼基板S1、S2之後，藉由在第1平板20和第2平板30之間，推壓基板S1、S2，黏貼基板S1、S2的構成亦可。Furthermore, in the above-mentioned embodiment, the structure in which the substrate bonding device 100 bonds the substrates S1 and S2 temporarily bonded through the adhesive layer F in the previous process is taken as an example for description, but it is not limited to this. For example, even if the substrate bonding device 100 is used, the substrates S1 and S2 are sequentially loaded, and after the substrates S1 and S2 are bonded via the adhesive layer F, the substrates S1 and S2 are pressed between the first flat plate 20 and the second flat plate 30 , the structure of pasting the substrates S1 and S2 is also possible.

20:第1平板 30:第2平板 31:平板主體 35:抵接片 50:推壓機構 100:基板黏貼裝置 Af:機能區域 S,S1,S2:基板 20: 1st plate 30: 2nd plate 31: Tablet body 35: Butt piece 50:Pushing mechanism 100:Substrate bonding device Af: functional area S,S1,S2:Substrate

[圖1]為表示實施型態所涉及之基板黏貼裝置之一例的圖。 [圖2]為基板及從上方觀看基板的圖。 [圖3]為使第2平板下降，使抵接片抵接於基板之狀態的縱剖面圖。 [圖4]為表示本實施型態所涉及之基板黏貼方法之一例的流程圖。 [圖5]為表示基板黏貼裝置之動作之一例的工程圖。 [圖6]為表示基板黏貼裝置之動作之一例的工程圖。 [圖7]為表示基板黏貼裝置之動作之一例的工程圖。 [圖8]為表示基板黏貼裝置之動作之一例的工程圖。 [圖9]為表示基板黏貼裝置之動作之一例的工程圖。 [圖10]為表示抵接片所使用之薄片材料的性能評估之結果的圖。 [Fig. 1] is a diagram showing an example of a substrate bonding device according to the embodiment. [Fig. 2] shows a substrate and a diagram of the substrate viewed from above. [Fig. 3] is a longitudinal cross-sectional view of a state in which the second flat plate is lowered and the contact piece is brought into contact with the substrate. [Fig. 4] is a flowchart showing an example of a substrate bonding method according to this embodiment. [Fig. 5] is an engineering diagram showing an example of the operation of the substrate bonding device. [Fig. 6] is an engineering diagram showing an example of the operation of the substrate bonding device. [Fig. 7] is an engineering diagram showing an example of the operation of the substrate bonding device. [Fig. 8] is an engineering diagram showing an example of the operation of the substrate bonding device. [Fig. 9] is an engineering diagram showing an example of the operation of the substrate bonding device. [Fig. 10] Fig. 10 is a diagram showing the results of performance evaluation of the sheet material used for the contact sheet.

10:腔室 10: Chamber

10a:側壁 10a:Side wall

10b:頂板 10b:top plate

10h:貫通部 10h: Through Department

11:開口部 11:Opening part

12:閘閥 12: Gate valve

15:基台 15:Abutment

20:第1平板 20: 1st plate

21:支持板 21:Support board

22:第1加熱器 22: 1st heater

23:基座板 23: Base plate

23a:載置面 23a:Placement surface

24:支柱 24:Pillar

30:第2平板 30: 2nd plate

31:平板主體 31: Tablet body

32:受壓板 32: Pressure plate

33:第2加熱器 33: 2nd heater

34:加壓板 34: Pressure plate

34a:加壓面 34a: Pressurized surface

35:抵接片 35: Butt piece

35f:抵接面 35f: contact surface

50:推壓機構 50:Pushing mechanism

51:推壓軸 51:Push shaft

100:基板黏貼裝置 100:Substrate bonding device

S,S1,S2:基板 S,S1,S2:Substrate

F:接著層 F:Following layer

Claims (10)

一種基板黏貼裝置，具有： 第1平板及第2平板，其係在重疊複數基板之狀態下進行夾持，和 推壓機構，其係將上述第1平板及上述第2平板中之一方推壓至另一方， 上述第1平板及上述第2平板之至少一方具備： 平板主體，和 能夠變形的抵接片，其係被支持於上述平板主體而抵接於上述基板，具有比上述平板主體更高的柔軟性。 A substrate sticking device having: The first flat plate and the second flat plate are clamped in a state where a plurality of substrates are overlapped, and A pushing mechanism that pushes one of the above-mentioned first flat plate and the above-mentioned second flat plate to the other, At least one of the above-mentioned first flat plate and the above-mentioned second flat plate has: tablet body, and The deformable contact piece is supported by the flat plate body and is in contact with the substrate, and has higher flexibility than the flat plate body. 如請求項1之基板黏貼裝置，其中 上述抵接片係被形成覆蓋上述基板之機能區域。 For example, the substrate bonding device of claim 1, wherein The above-mentioned contact piece is formed to cover the functional area of the above-mentioned substrate. 如請求項1或2之基板黏貼裝置，其中 上述抵接片係包含具有低於上述平板主體之壓縮楊氏係數之材料而被形成。 For example, the substrate bonding device of claim 1 or 2, wherein The contact piece is formed of a material having a lower compressive Young's modulus than the flat plate body. 如請求項1或2之基板黏貼裝置，其中 上述抵接片係橡膠硬度為15~36。 For example, the substrate bonding device of claim 1 or 2, wherein The rubber hardness of the above-mentioned contact piece is 15~36. 如請求項1或2之基板黏貼裝置，其中 上述抵接片係使用多孔質材料而被形成。 For example, the substrate bonding device of claim 1 or 2, wherein The above-mentioned contact piece is formed using a porous material. 如請求項1或2之基板黏貼裝置，其中 上述抵接片具有0.5mm以上1.5mm以下之厚度。 For example, the substrate bonding device of claim 1 or 2, wherein The above-mentioned contact piece has a thickness of not less than 0.5 mm and not more than 1.5 mm. 如請求項1或2之基板黏貼裝置，其中 上述抵接片係於施加每單位面積1.0t之荷重時，藉由在上述荷重之方向變形50um以上之材料而形成。 For example, the substrate bonding device of claim 1 or 2, wherein The above-mentioned contact piece is formed by deforming the material by more than 50um in the direction of the above-mentioned load when a load of 1.0t per unit area is applied. 如請求項1或2之基板黏貼裝置，其中 上述第1平板及上述第2平板之一方或雙方具備用以加熱上述基板的加熱部， 上述抵接片係由具有承受上述加熱部所致之加熱溫度的耐熱性之材料形成。 For example, the substrate bonding device of claim 1 or 2, wherein One or both of the first flat plate and the second flat plate include a heating portion for heating the substrate, The contact piece is made of a heat-resistant material that can withstand the heating temperature caused by the heating portion. 如請求項1或2之基板黏貼裝置，其中 上述抵接片之外形尺寸小於上述基板之外形尺寸，於上述抵接片抵接於上述基板之時，上述基板之外周部突出至上述抵接片之外側。 For example, the substrate bonding device of claim 1 or 2, wherein The outer dimensions of the contact piece are smaller than the outer dimensions of the substrate. When the contact piece is in contact with the substrate, the outer peripheral portion of the substrate protrudes to the outside of the contact piece. 一種基板黏貼方法，其係以重疊複數基板之狀態下，藉由以第1平板及第2平板夾持，黏貼上述複數基板的方法，包含： 在上述第1平板和上述第2平板之間，以重疊上述複數基板之狀態配置之步驟；和 藉由將上述第1平板及上述第2平板中之任一方朝向另一方推壓，將推壓力施加至上述第1平板和上述第2平板之間的上述複數基板之步驟， 上述推壓力係經由因應上述推壓力而變形的抵接片，而被施加至上述複數基板。 A substrate pasting method, which is a method of pasting multiple substrates by sandwiching them with a first flat plate and a second flat plate in a state where they are overlapped, including: The step of arranging the plurality of substrates in a state of overlapping them between the first flat plate and the second flat plate; and The step of applying a pressing force to the plurality of substrates between the first flat plate and the second flat plate by pressing one of the first flat plate and the second flat plate toward the other, The pressing force is applied to the plurality of substrates via the contact piece deformed in response to the pressing force.
TW112104413A 2022-04-08 2023-02-08 Substrate adhering device and substrate adhering method characterized in that the arrangement of a stress dispersion plate can uniformize the pressurizing force applied to the joint surface of substrates TW202346080A (en)

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