TW202338483A - 光源裝置 - Google Patents
光源裝置 Download PDFInfo
- Publication number
- TW202338483A TW202338483A TW111134465A TW111134465A TW202338483A TW 202338483 A TW202338483 A TW 202338483A TW 111134465 A TW111134465 A TW 111134465A TW 111134465 A TW111134465 A TW 111134465A TW 202338483 A TW202338483 A TW 202338483A
- Authority
- TW
- Taiwan
- Prior art keywords
- plasma
- raw material
- chamber
- radiation
- electric field
- Prior art date
Links
- 239000002994 raw material Substances 0.000 claims abstract description 228
- 230000005855 radiation Effects 0.000 claims abstract description 134
- 230000005684 electric field Effects 0.000 claims abstract description 128
- 239000007788 liquid Substances 0.000 claims abstract description 36
- 238000005259 measurement Methods 0.000 claims description 9
- 238000000605 extraction Methods 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 3
- 239000000284 extract Substances 0.000 claims description 3
- 210000002381 plasma Anatomy 0.000 description 325
- 238000002347 injection Methods 0.000 description 122
- 239000007924 injection Substances 0.000 description 122
- 239000000463 material Substances 0.000 description 58
- 239000007789 gas Substances 0.000 description 45
- 230000007246 mechanism Effects 0.000 description 18
- 238000010586 diagram Methods 0.000 description 17
- 150000002500 ions Chemical class 0.000 description 16
- 238000000034 method Methods 0.000 description 14
- 239000010408 film Substances 0.000 description 12
- 238000007789 sealing Methods 0.000 description 11
- 229910052718 tin Inorganic materials 0.000 description 11
- 230000006870 function Effects 0.000 description 10
- 238000007689 inspection Methods 0.000 description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 8
- 230000005284 excitation Effects 0.000 description 8
- 239000012212 insulator Substances 0.000 description 8
- 239000012528 membrane Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000013077 target material Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 239000012634 fragment Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 238000003745 diagnosis Methods 0.000 description 6
- 230000006399 behavior Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910052744 lithium Inorganic materials 0.000 description 5
- 230000035515 penetration Effects 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 239000012777 electrically insulating material Substances 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910001338 liquidmetal Inorganic materials 0.000 description 4
- 229910000807 Ga alloy Inorganic materials 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 230000008520 organization Effects 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 206010014357 Electric shock Diseases 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000000441 X-ray spectroscopy Methods 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011976 chest X-ray Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 229910001084 galinstan Inorganic materials 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
- H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- X-Ray Techniques (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- General Physics & Mathematics (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022-057606 | 2022-03-30 | ||
| JP2022057606A JP2023149175A (ja) | 2022-03-30 | 2022-03-30 | 光源装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202338483A true TW202338483A (zh) | 2023-10-01 |
Family
ID=83228709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111134465A TW202338483A (zh) | 2022-03-30 | 2022-09-13 | 光源裝置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20230319970A1 (ja) |
| EP (1) | EP4255122A1 (ja) |
| JP (1) | JP2023149175A (ja) |
| KR (1) | KR20230141415A (ja) |
| TW (1) | TW202338483A (ja) |
| WO (1) | WO2023188484A1 (ja) |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59212405A (ja) | 1983-05-18 | 1984-12-01 | Lion Corp | 防かび剤組成物 |
| JP4904809B2 (ja) * | 2005-12-28 | 2012-03-28 | ウシオ電機株式会社 | 極端紫外光光源装置 |
| JP2007200919A (ja) * | 2006-01-23 | 2007-08-09 | Ushio Inc | 極端紫外光光源装置 |
| JP2008311465A (ja) * | 2007-06-15 | 2008-12-25 | Nikon Corp | Ｅｕｖ光源、ｅｕｖ露光装置および半導体デバイスの製造方法 |
| JP2010147215A (ja) * | 2008-12-18 | 2010-07-01 | Ushio Inc | 極端紫外光光源装置 |
| JP5245857B2 (ja) * | 2009-01-21 | 2013-07-24 | ウシオ電機株式会社 | 極端紫外光光源装置 |
| JP6252358B2 (ja) * | 2014-05-27 | 2017-12-27 | ウシオ電機株式会社 | 極端紫外光光源装置 |
| RU2706713C1 (ru) * | 2019-04-26 | 2019-11-20 | Общество С Ограниченной Ответственностью "Эуф Лабс" | Источник коротковолнового излучения высокой яркости |
| JP7435195B2 (ja) * | 2020-04-15 | 2024-02-21 | ウシオ電機株式会社 | 極端紫外光光源装置およびプラズマ位置調整方法 |
-
2022
- 2022-03-30 JP JP2022057606A patent/JP2023149175A/ja active Pending
- 2022-08-31 US US17/899,772 patent/US20230319970A1/en active Pending
- 2022-09-06 EP EP22194063.8A patent/EP4255122A1/en active Pending
- 2022-09-13 TW TW111134465A patent/TW202338483A/zh unknown
- 2022-10-19 WO PCT/JP2022/038862 patent/WO2023188484A1/ja unknown
- 2022-11-01 KR KR1020220143405A patent/KR20230141415A/ko unknown
Also Published As
| Publication number | Publication date |
|---|---|
| EP4255122A1 (en) | 2023-10-04 |
| US20230319970A1 (en) | 2023-10-05 |
| WO2023188484A1 (ja) | 2023-10-05 |
| JP2023149175A (ja) | 2023-10-13 |
| KR20230141415A (ko) | 2023-10-10 |
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