TW202331925A - 平坦化製程、設備及製造物品的方法 - Google Patents
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Abstract
提供一種平坦化系統。平坦化系統包括第一晶圓卡盤,其在平坦化步驟的期間將晶圓固持為平整的;以及第二晶圓卡盤,其在分離步驟的期間以曲率固持晶圓。
Description
本揭露內容關於平坦化處理,且更具體地,關於平坦化卡盤和分離卡盤。
平坦化技術在製造半導體裝置中為有用的。例如,用於建立半導體裝置的處理包括重複地將材料加入到基板以及從基板移除材料,產生具有不規則高度變化(形貌)的層狀基板(layered substrate)。隨著更多的層被加入基板,高度變化增加。高度變化對於將額外的層加入到層狀基板的能力具有負面的影響。除此之外,半導體基板(例如,矽晶圓)本身並非總是完全地平整的,且可能包括初始表面高度變化(形貌)。解決此問題的一個方法是使基板平坦化。各種微影圖案化方法均受益於對平面表面進行圖案化。在基於ArFi雷射的微影術中,平坦化提升了焦深(DOF)、關鍵尺寸(CD)、以及關鍵尺寸一致性(critical dimension uniformity)。在極紫外微影術(EUV)中,平坦化提升了特徵布局(feature placement)以及DOF。在奈米壓印微影術(NIL)中,平坦化提升了圖案轉移之後的特徵填充和CD控制。
有時候被稱為基於噴墨的自適應平坦化(inkjet-based adaptive planarization,IAP)的平坦化技術包括在基板和上層基板(superstrate)之間分配可聚合材料的可變液滴圖案,其中,液滴圖案依據基板形貌而變化。接著使上層基板與可聚合材料接觸,在這之後,材料在基板上被聚合,並移除上層基板。理想的是平坦化技術中的改良,用於提升,例如,整個晶圓處理和半導體裝置製造。
提供一種平坦化系統。平坦化系統包括在平坦化步驟的期間被使用的第一晶圓卡盤及在分離步驟的期間被使用的第二晶圓卡盤。在平坦化步驟的期間,第一晶圓卡盤配置為將晶圓固持為平整的,而在分離步驟的期間,第二晶圓卡盤配置為以非平整配置(例如,以曲率)固持晶圓。第一晶圓卡盤可包括與要被由第一晶圓卡盤固持的晶圓接觸的複數個接觸點。第一晶圓卡盤在複數個接觸點上可具有不大於50nm的總體平整度(global flatness)。在平坦化步驟的期間,第一晶圓卡盤配置為在平坦化步驟的期間在使背側接觸面積最小化的同時維持晶圓的平整度。第一晶圓卡盤可由氧化鋁、碳化矽、藍寶石或陶瓷所製成。
第二晶圓卡盤可由順應性材料(compliant material)所製成。第一晶圓卡盤可具有不小於晶圓的直徑之直徑,以在平坦化的期間從邊緣到邊緣支撐晶圓。第二晶圓卡盤可具有小於晶圓的直徑之直徑。第二晶圓卡盤可配置為在分離步驟的期間使在晶圓的邊緣處的固持力最大化。在一個實施例中,第二晶圓卡盤可包括預定數量的銷和平台,且銷和平台中的每一者具有預定用於分離的幾何形狀和表面積。或者,第二晶圓卡盤在要與晶圓接觸的接觸側處具有圓頂或圓柱形狀。第二晶圓卡盤可較第一晶圓卡盤更有彈性。第二晶圓卡盤可在其中心處具有最大厚度,且在其周緣處具有最薄厚度。第二晶圓卡盤可具有要與晶圓接觸的表面,此表面具有一系列階部,此系列階部具有從第二晶圓卡盤的中心逐漸地減少的高度。在另一個實施例中,第二晶圓卡盤可包括從其中心到周緣被佈置的凹陷中心、第一平台、凹陷環部、以及第二平台。
平坦化系統還可包括旋轉載台,第一晶圓卡盤及第二晶圓卡盤在旋轉載台上旋轉,以分別與平坦化頭對準。旋轉載台可包括三位旋轉載台,其配置為在平面上承載第一晶圓卡盤、第二晶圓卡盤、及上層基板裝載卡盤。第一晶圓卡盤、第二晶圓卡盤、及上層基板卡盤可在此平面上被佈置為三角形。或者,平坦化系統可包括線性載台,第一晶圓卡盤及第二晶圓卡盤在線性載台上線性地移動,以分別與平坦化頭對準。
提供一種製造物品的方法。材料被施加到晶圓上。晶圓由第一晶圓卡盤固持。在由第一晶圓卡盤所固持的晶圓為平整的同時,由第一晶圓卡盤所固持的晶圓上的材料被平坦化。在第二晶圓卡盤以曲率固持晶圓的同時,執行分離。
在當結合所附圖式及所提供的申請專利範圍閱讀過本揭露內容的例示性實施例的以下詳細描述的情況下,本揭露內容的這些及其他目的、特徵及優點將變得清楚明瞭。
平坦化系統
圖1顯示實施例可在其中被實施之奈米壓印微影設備10。設備10可被使用來在基板12上形成浮雕圖案。基板12可被耦接到基板卡盤14。如同所顯示的,基板卡盤14為真空卡盤。然而,基板卡盤14可為包括真空、銷式、槽式、靜電、電磁卡盤等的任何卡盤,但不限於此。
基板12和基板卡盤14可進一步由定位載台16所支撐。載台16可提供沿著x、y、z、θ及ϕ軸中的一者或多者的平移及/或旋轉動作。載台106、基板102和基板卡盤104亦可被定位在基座(未顯示)上。與基板12間隔開的為模板18。模板18可由包括熔矽石(fused silica)、石英、矽、有機聚合物、矽氧烷聚合物(siloxane polymer)、硼矽酸玻璃(borosilicate glass)、氟碳聚合物(fluorocarbon polymer)、金屬、硬化藍寶石等的這些材料所形成,但不限於此。圖案化表面22可包括特徵,其界定出形成要被形成在基板12上的圖案的基礎之任何原始圖案;或者,表面22可為空白的,亦即,沒有圖案化特徵,在此情況下,可在基板的表面上形成平坦表面。在替代實施例中,當圖案化表面22為與基板相同的面積尺寸時,可在全部的基板上形成層(例如,整個基板處理)。
模板18(在具有平整表面的平整構件的形式中為上層基板18)可被耦接到模板卡盤28(上層基板卡盤28)。模板卡盤28可配置為真空、銷式、槽式、靜電、電磁、及/或其他類似的卡盤類型,但不限於此。此外,模板卡盤28可被耦接到頭30,其接著被可移動地耦接到橋36,使得模板卡盤28、頭30和模板18至少可在z軸方向上移動。
設備10可進一步包括流體分配系統32。流體分配系統32可被使用來將可成形材料34(例如,可聚合材料)沉積到基板12上。可使用像是液滴分配、旋塗、浸塗(dip coating)、化學氣相沈積(CVD)、物理氣相沈積(PVD)、薄膜沉積、厚膜沉積等的技術來將可成形材料34定位在基板12上。可在依據設計考量界定出模具22與基板12之間的理想體積之前及/或之後將可成形材料34設置在基板12上。
流體分配系統32可使用不同的技術來分配可成形材料34。當可成形材料34為可噴射的時,可使用噴墨類型的分配器來分配可成形材料。例如,熱噴墨、基於微機電系統(MEMS)的噴墨、閥噴射、及壓電噴墨是用於分配可噴射的液體之常見技術。
設備10可進一步包括輻射源38,其沿著路徑42引導光化能量(actinic energy)40。壓印頭30和載台16可配置為將模板18和基板12定位為與路徑42重疊。相機58可同樣地被定位為與路徑42重疊。設備10可藉由與載台16、頭30、流體分配系統32、源38、及/或相機58通信的處理器54來調節,且可在儲存於記憶體56中的電腦可讀取程式上操作。
頭30或載台16、或其兩者改變模具20與基板12之間的距離,以界定出藉由可成形材料34填充之兩者間的理想體積。例如,壓印頭30可對模板18施加力,使得模具20接觸可成形材料34。在藉由可成形材料34填充理想體積之後,源38產生光化能量40(例如,紫外輻射),其使可成形材料34固化及/或交聯以符合基板12的表面44和模板18的表面22的形狀,在基板12上界定出被形成的層。
平坦化處理
平坦化處理包括示意性地顯示於圖2A至2C中的步驟,其可以使用被配置為執行平坦化處理的奈米壓印微影設備10。如圖2A所示,液滴形式的可成形材料34被分配到基板12上。如同先前所討論的,基板表面具有一些形貌,其可能基於先前的處理操作而為已知的、或可使用輪廓儀(profilometer)、AFM、SEM、或像是Zygo NewView 8200之基於光學干涉效果的光學表面輪廓儀而被測量。被沉積的可成形材料34的局部體積密度依據基板形貌而改變。上層基板18接著被定位為與可成形材料34接觸。如同在本文中所使用的,模板和上層基板可被互換地使用,以描述要與可成形材料接觸以控制可成形材料的形狀之具有成形表面的物體。如同在本文中所使用的,模板卡盤和上層基板卡盤可被互換地使用,以固持模板或上層基板。
圖2B顯示在已使上層基板18完全與可成形材料34接觸之後但在聚合處理開始之前的後接觸步驟。上層基板18相當於圖1中的模板18,且基本上沒有特徵(可能包括對準或識別特徵),且可為與基板大致相同的尺寸和形狀(上層基板的特徵尺寸(例如,平均直徑)可落在基板的特徵尺寸的至少3%內)。當上層基板18接觸可成形材料34時,液滴合併以形成填充上層基板18和基板12之間的空間的可成形材料膜34’。較佳地,填充處理以均勻的方式發生而沒有任何空氣或氣泡被陷滯在上層基板18和基板12之間,以使未填充缺陷最小化。可藉由光化輻射(actinic radiation)(例如,UV輻射)來啟動可成形材料34的聚合處理或固化。例如,圖1的輻射源58可提供使可成形材料膜34’固化、凝固、及/或交聯的光化輻射,在基板上12界定出固化的平坦化層。或者,亦可藉由使用熱、壓力、化學反應、其他類型的輻射、或這些方式的任意組合來啟動可成形材料膜34’的固化。一旦被固化,平坦化層34”被形成,上層基板18可從平坦化層34”分離。圖2C顯示在上層基板18分離之後的基板12上之固化的平坦化層34”。
晶圓卡盤
如圖1所示之平坦化設備包括基板卡盤14(晶圓卡盤),用於固持基板(例如,晶圓)12。共用的晶圓卡盤14先前已在壓印和平坦化處理中被使用於平坦化和分離兩者。例如,如圖2A至2C所示,在平坦化處理和分離處理兩者的期間使用相同的晶圓卡盤14。在平坦化的期間,需要剛性平整的晶圓卡盤來達成理想的均勻性水平。然而,晶圓的這種幾何形狀與限制條件限制了可被使用來將上層基板18從晶圓12上的平坦化層34”分離的技術。具有平坦化和分離兩者之共用的卡盤對於生產量而言亦為瓶頸,因為其必須被佔用兩個步驟。為了解決使用平坦化和分離兩者之共用的卡盤所產生的問題,提出了分別使用兩個不同的卡盤進行平坦化和分離。這些卡盤可被定位在共用平台或分離的動作平台上,且其每一者可被設計為具有專用於其各自的目的之不同特徵。因此,由於可並行地執行平坦化、分離和晶圓處置步驟,可提升生產量和品質。如同在本文中所使用的,晶圓和基板可被互換地使用,以描述可成形材料藉由上層基板及/或模板在其上被塑形的工件。晶圓可由半導體、金屬、介電質或複合材料所製成。晶圓可為晶質或玻璃狀的。
對於平坦化,要求晶圓卡盤(例如,銷式卡盤)提供足夠的支撐,以在最小化背側接觸面積的同時維持平整的晶圓。例如,背側接觸較佳地被控制在0.5%到5%之間。總體平整度較佳地被控制在約50nm。用於形成卡盤的材料較佳地為足夠硬且剛性的,以建立耐久、平整的晶圓表面。例如,像是氧化鋁、碳化矽、藍寶石和其他陶瓷的材料可被使用來形成平坦化卡盤。硬度可被控制為大於洛氏硬度C(Rockwell C)60或維氏硬度(Vickers Hardness)746。需要從晶圓的邊緣到邊緣的完整支撐。平坦化晶圓卡盤可包括用於300mm直徑的晶圓之外部平台,其具有約295mm到約298mm的直徑。
為了從晶圓分離上層基板,可能需要在晶圓的邊緣處之固持力來促進裂縫發生。分離晶圓卡盤的幾何形狀亦可配置為促進晶圓從上層基板的剝離。用於分離的分離晶圓卡盤不需要是平整的。相反地,其可能為順應的,或具有配置為以非平整或彎曲配置來固持夾層的晶圓的特徵。亦即,在分離的期間,由分離晶圓卡盤所固持的晶圓可能由於分離晶圓卡盤的順應特徵而被彎曲或彎折。分離晶圓卡盤可有意地彎曲夾層及/或夾層的晶圓、或增加上層基板和晶圓的夾層的曲率用於分離。分離晶圓卡盤不需要完全地支撐晶圓或夾層。相反地,晶圓或夾層可能以懸臂的方式離開卡盤,且卡盤可作用為分離致動器,以將晶圓從上層基板分離。分離晶圓卡盤的銷和平台的幾何形狀與表面積可被設計為改變均勻性和密度,以優化分離機構。圖3A至3E顯示可被用於分離之卡盤的各種例示性幾何形狀。
圖3A顯示分離晶圓卡盤300,其具有圓頂形或部分圓柱形的接觸側300C。在平坦化之後,晶圓(基板)303、上層基板302(及像是如圖2C中所顯示的層34”的平坦化層)的夾層301允許平坦化頭(PH)卡盤(未顯示,但相當於頭30)遵循分離晶圓卡盤300並施加壓力以從晶圓303上的平坦化層34”分離上層基板302。圓頂形的接觸側300C可具有徑向地對稱的曲率半徑。圓柱形的接觸側300C可具有沿著一個軸的曲率半徑,且實質上沒有沿著正交於第一軸的第二軸的曲率。圖3B顯示分離晶圓卡盤310的截面圖,分離晶圓卡盤310具有小於晶圓313、平坦化層315”及上層基板312的夾層311的直徑。夾層311具有懸垂邊緣部分311e,使得致動器314可被定位在懸垂邊緣部分311e下方,以致動晶圓313上的平坦化層34”和上層基板312的分離。在圖3C中,分離晶圓卡盤320由順應或彈性材料所製成,以與平坦化頭卡盤(未顯示)串接地工作。亦即,在分離的期間,彈性的晶圓卡盤320適形於彈性的上層基板卡盤(相當於模板卡盤28),以將上層基板322保持於晶圓323上的平坦化層325、或從晶圓323上的平坦化層325移除上層基板322。在如圖3C所顯示的實施例中,上層基板322、平坦化層325及晶圓323的夾層321的直徑可能少於彈性的晶圓卡盤320之直徑。圖3D顯示包括在其接觸側330C處之階狀結構334的平整的分離晶圓卡盤330。在圖3D所顯示的範例中,卡盤上之平台的階狀結構具有多個階級,其厚度從分離晶圓卡盤330的中心朝向邊緣逐漸地被減少,分離晶圓卡盤330可固持晶圓333、平坦化層34”及上層基板332的夾層331。階狀結構334的重要面向為卡盤包括複數個平台,複數個平台可採用一系列同心環類型平台的形式。隨著環的半徑增加,平台的頂表面減少,其允許夾層在施加真空時具有彎曲的形狀。在替代實施例中,環類型平台被以複數個離散的平台替代,其中,平台的頂表面隨著離分離卡盤330的中心之距離的函數而減少,這允許夾層在施加真空時具有彎曲的形狀。分離晶圓卡盤330配備有真空源,其施加由圖3D中的箭頭所指示的真空。在圖3E中,分離晶圓卡盤340在接觸側340C處包括多個平台344,以在分離晶圓卡盤340的上視圖中造成甜甜圈形狀。如圖3E所示,分離晶圓卡盤340的中央部分從內平台344I凹陷。內平台344I及外平台344O界定出周緣環部分,其從內平台344I和外平台344O兩者凹陷。在實施例中,外平台344O相對於內平台344I凹陷。在分離的期間,施加真空以朝向分離晶圓卡盤340推動上層基板343、平坦化層34”及基板342的夾層341的邊緣。
平坦化晶圓卡盤和分離晶圓卡盤可由共用載台基座所支撐。共用載台基座可具有線性載台配置,其允許平坦化晶圓卡盤和分離晶圓卡盤在共用載台基座上線性地移動。圖4顯示用於在線性載台上承載和支撐平坦化晶圓卡盤403與分離晶圓卡盤404的線性載台基座400的實施例。平坦化晶圓卡盤403由平坦化卡盤台架401所支撐,且分離晶圓卡盤404由分離卡盤台架402所支撐。平坦化卡盤台架403和分離卡盤台架404兩者均由共用的載台基座400所支撐,且可在共用的載台基座400上線性地移動。可選的UV光源,例如,UV LED陣列405可被佈置在載台基座400的一側上。平坦化頭406被佈置在載台基座400的中心上方。由平坦化卡盤台架401所承載的平坦化卡盤403可在與可選的UV LED源405對準的位置和與平坦化頭406對準的位置之間移動。由分離卡盤台架402所承載的分離卡盤404在與平坦化頭406對準的中心位置和在載台基座400的另一側處之位置之間移動。平坦化頭406可包括上層基板卡盤,其類似於圖1中所顯示的上層基板卡盤28。
圖5A至5C為顯示用於支撐平坦化晶圓卡盤511和分離晶圓卡盤512的三位線性載台500的上視圖。沿著線性載台500上的伸長方向界定出三個區域,其包括平坦化卡盤裝載區域501、分離卡盤裝載區域503、及在平坦化卡盤裝載區域501和分離卡盤裝載區域503之間的上層基板卡盤裝載區域502。類似於如圖4所顯示的實施例,可選的UV LED源可被安裝在平坦化卡盤裝載區域501的頂部上。基板12可在平坦化卡盤裝載區域501中被裝載到平坦化卡盤上。如圖5A所示,平坦化卡盤511被裝載於平坦化卡盤裝載區域501中。平坦化頭513(相當於如圖1所示的頭30)被放置在上層基板卡盤裝載區域502上方,且上層基板卡盤(相當於如圖1所示的模板卡盤28)可在上層基板卡盤裝載區域502處以類似於如圖1所示的方式裝載上層基板18。分離卡盤512藉由平坦化頭PH來裝載夾層(晶圓;平坦化層34”;及上層基板):在平坦化卡盤500位在平坦化頭下方的同時從平坦化卡盤500移除夾層;保持夾層直到分離卡盤512位在平坦化頭PH下方;以及將夾層裝載到分離卡盤512上。可對由位在平坦化卡盤裝載區域501處之平坦化卡盤511所承載的晶圓施加UV輻射。UV輻射源亦可被安裝在平坦化頭中,以對晶圓施加UV曝光。為了執行平坦化,上層基板被裝載到上層基板卡盤上。具有被分配的可成形材料之晶圓在平坦化卡盤裝載區域501處被裝載到平坦化卡盤511上。平坦化卡盤511被移動到平坦化頭PH下方,以開始流體擴展。上層基板接著被從平坦化頭釋放,以完成流體擴展,且可成形材料膜於上層基板裝載區域502處在平坦化頭(PH)下方被固化,如圖5B所示。可成形材料亦可在被移動到平坦化卡盤裝載區域501的同時被暴露於UV輻射。在平坦化處理之後,夾層(晶圓;平坦化層34”;及上層基板)被從平坦化卡盤511解除耦接,且上層基板卡盤被附接於平坦化頭。平坦化卡盤511被移動離開上層基板裝載區域502,且分離卡盤512移動到上層基板裝載區域502,如圖5C所示,以保持晶圓以及從晶圓上的平坦化層34”分離上層基板。一旦完成分離,分離卡盤512移動到分離卡盤卸載區域503,在此處,具有平坦化層34”的晶圓可從線性載台500被卸載。
除了線性載台配置之外,共用的載台可具有旋轉載台配置,其允許平坦化晶圓卡盤和分離晶圓卡盤在共用的載台基座上旋轉。圖6顯示載台基座600的實施例,載台基座600包括用於承載和旋轉的旋轉軌道或旋轉盤604,以沿著其周緣將平坦化晶圓卡盤601、分離晶圓卡盤602、及上層基板裝載站603支撐在三個區域處。上層基板卡盤裝載站603可為被優化用於藉由晶圓處置機器人來上層基板18裝載到上層基板卡盤(其被附接於平坦化頭605)上的站。上層基板卡盤裝載站603可包括額外空間,用於使晶圓處置機器人能夠取得上層基板卡盤。上層基板卡盤裝載站603可包括上層基板裝載卡盤,其具有上層基板18藉由晶圓處置機器人而被裝載於其上的抬升銷,上層基板卡盤裝載站603的抬升銷可接著朝向上層基板卡盤(其被附接於平坦化頭605)抬起上層基板18。當上層基板卡盤裝載站603具有上層基板裝載卡盤抬起銷時,上層基板接著可在上層基板裝載卡盤並非位在平坦化頭下方時被裝載到上層基板裝載卡盤上。可選的UV光源,例如,UV LED606,可被佈置在區域中的一者上方,如圖6所示。平坦化頭605可被佈置為位在平坦化晶圓卡盤601、分離晶圓卡盤602、及上層基板裝載站603中的每一者的頂部上。平坦化頭60的中心被定位在或靠近於與平坦化晶圓卡盤601、分離晶圓卡盤602、及上層基板裝載站603的中心交會的圓的周邊上的點處。在圖6中,旋轉軌道604順時針旋轉,以將平坦化卡盤601、分離卡盤602、及上層基板卡盤603移動到不同的區域。
圖7A至7C為顯示用於支撐平坦化晶圓卡盤701和分離晶圓卡盤702的三位旋轉載台基座700的上視圖。旋轉載台基座700可包括旋轉盤704,其用於沿著旋轉盤704的周緣在三個區域處將晶圓裝載到平坦化卡盤701上、分離卡盤702上的夾層上、以及上層基板卡盤裝載站703。隨著旋轉軌道704旋轉,平坦化卡盤701、分離卡盤702、及上層基板卡盤裝載站703從一個區域移動到下一個區域。在一個實施例中,在平坦化卡盤701、分離卡盤702、及上層基板卡盤裝載站703被佈置的平面上界定出等邊三角形(equilateral triangle)。平坦化卡盤701、分離卡盤702、及上層基板卡盤裝載站703可被佈置在三角形的三個相應的角落處。亦即,平坦化卡盤701、分離卡盤702、及上層基板卡盤裝載站703可相對於彼此繞著三角形的中心軸以120度間隔開來。在圖7A中,在實施例中,平坦化頭被固定,且上層基板裝載站703(其可包括上層基板裝載卡盤)被移動到平坦化頭705下方。在如圖7A所顯示的實施例中,可選的UV LED源706被定位在沒有平坦化頭的區域中的一者內。雖然圖7A和7B顯示平坦化卡盤701、分離卡盤702、及上層基板卡盤裝載站703的順時針旋轉,應理解的是,旋轉軌道704亦可逆時針旋轉,且UV源亦可被安裝在與平坦化頭705相同的區域中。在圖7B中,平坦化卡盤705在平坦化頭PH下方被旋轉,用於擴展被施加到由平坦化卡盤705所保持的晶圓上的可成形材料,以形成可成形材料膜。可藉由被安裝於平坦化頭PH中的固化源來執行可成形材料膜的固化,以形成平坦化層。平坦化卡盤701可在可選的UV源706下方被旋轉,以在平坦化層上執行可選的UV曝光。在固化之後,平坦化卡盤701可在平坦化頭PH下方被旋轉。在固化之後,平坦化頭PH可被使用來從平坦化卡盤701移除夾層以及保持夾層。在圖7C中,在平坦化處理的期間,分離卡盤702被旋轉到平坦化頭PH下方,以執行從平坦化層之上層基板的分離。在分離卡盤702已被移動到平坦化頭PH下方之後,分離卡盤702和平坦化頭PH被一起使用來從夾層移除上層基板。接著,可從分離卡盤移除平坦化晶圓。在分離卡盤從平坦化頭PH移動離開之後,可完成平坦化晶圓的移除。
圖8顯示如同上面所討論之對於平坦化和分離使用不同的晶圓卡盤來製造物品的方法。在步驟S801中,可成形材料被施加到晶圓上。在步驟S802中藉由第一晶圓卡盤來保持具有可成形材料的晶圓。步驟S801可在步驟S802中之第一晶圓卡盤保持晶圓之前或同時被執行。在步驟S803中在由第一晶圓卡盤所保持的晶圓上執行平坦化。在步驟S803之前,上層基板被裝載到附接於平坦化頭的上層基板卡盤上。同樣地,在步驟S803之前,第一晶圓卡盤被定位為位在平坦化頭下方。在平坦化的期間,由第一晶圓卡盤所保持的晶圓被維持在平整狀態。在步驟S803的期間,使上層基板與由第一卡盤所固持的晶圓上的可成形材料接觸,其開始可成形材料的擴展。在步驟S803的期間,上層基板卡盤可釋放上層基板,使得其倚靠在可成形材料上,以在第一晶圓卡盤上形成夾層(晶圓;可成形材料;上層基板)。在步驟S803的期間,可成形材料被固化,這可能藉由在夾層在可成形材料已擴展之後位在第一晶圓卡盤上的同時使可成形材料暴露於UV輻射而發生。固化實質上停止可成形材料的擴展。在固化的期間,夾層位在第一晶圓卡盤上,且可在平坦化頭下方。在固化之前,第一晶圓卡盤可從平坦化頭的下方被移動到固化區域。在固化之後,第一晶圓卡盤和夾層可被移動到平坦化頭下方。平坦化頭可接著被使用來從第一晶圓卡盤移除夾層。第一晶圓卡盤可接著被移動離開平坦化頭,且第二晶圓卡盤可被帶到平坦化頭下方。在步驟S804中,藉由第二晶圓卡盤來保持夾層。在步驟S804的期間,平坦化頭可被使用來將夾層定位在第二晶圓卡盤上。第二晶圓卡盤不同於第一晶圓卡盤。在步驟S805中,分離在由第二晶圓卡盤所固持的晶圓彎曲、及/或造成晶圓及/或夾層的曲率的同時被執行。在步驟S805的期間可使用平坦化頭連同第二卡盤來使上層基板從晶圓上的被固化的可成形材料分離。可在分離之後將第二晶圓卡盤從平坦化頭移動離開到卸載站,在卸載站,從第二晶圓卡盤移除被平坦化的晶圓。
有鑑於此描述內容,對於本領域技術人士而言各種面向的更多修改及替代實施例將為顯而易見的。據此,此描述內容僅被解釋為例示性的。應理解的是,在本文中所顯示和描述的形式被視為實施例的範例。元件和材料可替代本文中所顯示和描述的元件和材料,零件和處理可被顛倒,且特定特徵可被獨立地運用,所有這些對於本領域技術人士而言在已受益於此描述內容之後均為顯而易見的。
10:(奈米壓印微影)設備
12:基板(晶圓)
14:基板(晶圓)卡盤
16:(定位)載台
18:模板(上層基板)
22:(圖案化)表面
28:模板(上層基板)卡盤
30:(壓印)頭
32:流體分配系統
34:可成形材料
34’:可成形材料膜
34”:平坦化層
36:橋
38:(輻射)源
42:路徑
44:表面
54:處理器
56:記憶體
58:相機
300:分離晶圓卡盤
300C:接觸側
301:夾層
302:上層基板
303:晶圓(基板)
305:平坦化層
310:分離晶圓卡盤
311:夾層
311e:懸垂邊緣部分
312:上層基板
313:晶圓
314:致動器
315:平坦化層
320:分離晶圓卡盤
321:夾層
322:上層基板
323:晶圓
325:平坦化層
330:分離晶圓卡盤
330C:接觸側
331:夾層
332:上層基板
333:晶圓
334:階狀結構
335:平坦化層
340:分離晶圓卡盤
340C:接觸側
341:夾層
342:基板
343:上層基板
344I:內平台
344O:外平台
345:平坦化層
400:(線性)載台基座
401:平坦化卡盤台架
402:分離卡盤台架
403:平坦化晶圓卡盤
404:分離晶圓卡盤
405:UV LED陣列(UV LED源)
406:平坦化頭
500:(三位)線性載台
501:平坦化卡盤裝載區域
502:上層基板卡盤裝載區域
503:分離卡盤裝載區域
511:平坦化(晶圓)卡盤
512:分離(晶圓)卡盤
513:平坦化頭
600:載台基座
601:平坦化(晶圓)卡盤
602:分離(晶圓)卡盤
603:上層基板(卡盤)裝載站(上層基板卡盤)
604:旋轉軌道
605:平坦化頭
606:UV LED
700:(三位)旋轉載台基座
701:平坦化(晶圓)卡盤
702:分離(晶圓)卡盤
703:上層基板(卡盤)裝載站
704:旋轉盤(軌道)
705:平坦化頭
706:UV(LED)源
S801:步驟
S802:步驟
S803:步驟
S804:步驟
S805:步驟
因此,可以詳細地理解本發明的特徵和優點,藉由參照所附圖式中所繪示的實施例,可得到本發明的實施例之更具體的描述。然而,應注意的是,所附圖式僅顯示本發明的典型實施例,且因此不視為其範圍的限制,對於本發明可承認其它同樣有效的實施例。
[圖1]為顯示平坦化系統的圖示;
[圖2A至2C]顯示平坦化處理;
[圖3A至3E]為顯示分離晶圓卡盤的可變配置的截面圖;
[圖4]顯示用於支撐平坦化晶圓卡盤和分離晶圓卡盤的線性載台;
[圖5A至5C]顯示用於平坦化和分離操作的平坦化晶圓卡盤和分離晶圓卡盤的位置;
[圖6]顯示用於支撐平坦化晶圓卡盤和分離晶圓卡盤的旋轉載台;
[圖7A至7C]顯示用於平坦化和分離操作的平坦化晶圓卡盤和分離晶圓卡盤的位置;以及
[圖8]為用於製造物品的方法的流程圖。
在所有圖式中,除非另有說明,否則相同的標號和字元被使用來表示所顯示實施例之相同的特徵、元件、部件或部分。此外,雖然現在將參照圖式詳細描述本揭露內容,但其是結合說明性例示性實施例來完成的。在未偏離由所附申請專利範圍所界定之本揭露內容的真實範疇和精神的情況下,旨在可對所描述的例示性實施例進行改變和修改。
400:(線性)載台基座
401:平坦化卡盤台架
402:分離卡盤台架
403:平坦化晶圓卡盤
404:分離晶圓卡盤
405:UV LED陣列(UV LED源)
406:平坦化頭
Claims (23)
- 一種平坦化系統,包括: 第一基板卡盤,配置為在平坦化步驟的期間固持基板;以及 第二基板卡盤,配置為在分離步驟的期間以非平整配置固持該基板。
- 如請求項1之平坦化系統,其中,該第一基板卡盤具有複數個接觸點,該複數個接觸點與要被由該第一基板卡盤固持的晶圓接觸。
- 如請求項2之平坦化系統,其中,該第一基板卡盤在該複數個接觸點上具有不大於50nm的總體平整度。
- 如請求項1之平坦化系統,其中,該第一基板卡盤配置為在該平坦化步驟的期間在使背側接觸面積最小化的同時維持該晶圓的平整度。
- 如請求項1之平坦化系統,其中,該第一基板卡盤由氧化鋁、碳化矽、藍寶石或其他陶瓷材料所製成。
- 如請求項1之平坦化系統,其中,該第二基板卡盤由順應性材料所製成。
- 如請求項1之平坦化系統,其中,該第一基板卡盤具有不小於該晶圓的直徑之直徑,以在平坦化的期間從邊緣到邊緣支撐該晶圓。
- 如請求項1之平坦化系統,其中,該第二基板卡盤具有小於該晶圓的直徑之直徑。
- 如請求項1之平坦化系統,其中,該第二基板卡盤配置為在該分離步驟的期間使在該晶圓的邊緣處的固持力最大化。
- 如請求項1之平坦化系統,其中,該第二晶圓卡盤包括預定數量的銷和平台,且該等銷和平台中的每一者具有預定用於分離的幾何形狀和表面積。
- 如請求項1之平坦化系統,其中,該第二基板卡盤具有圓頂或圓柱形狀。
- 如請求項1之平坦化系統,其中,該第二基板卡盤較該第一基板卡盤更有彈性。
- 如請求項1之平坦化系統,其中,該第二基板卡盤在其中心處具有最大厚度,且在其周緣處具有最薄厚度。
- 如請求項1之平坦化系統,其中,該第二基板卡盤具有要與該晶圓接觸的表面,該表面具有一系列階部,該一系列階部具有從該第二基板卡盤的中心逐漸地減少的高度。
- 如請求項1之平坦化系統,其中,該第二基板卡盤包括從其中心到周緣被佈置的凹陷中心、第一平台、凹陷環部、以及第二平台。
- 如請求項1之平坦化系統,還包括旋轉載台,該第一基板卡盤及該第二基板卡盤在該旋轉載台上旋轉,以分別與平坦化頭對準。
- 如請求項1之平坦化系統,還包括三位旋轉載台,其配置為在平面上承載該第一基板卡盤及該第二基板卡盤並使其旋轉。
- 如請求項17之平坦化系統,其中,該第一基板卡盤、該第二基板卡盤、及上層基板裝載站在該平面上被佈置為三角形。
- 如請求項1之平坦化系統,還包括線性載台,該第一基板卡盤及該第二基板卡盤在該線性載台上線性地移動,以分別與該平坦化頭對準。
- 一種方法,包括: 將基板固持在第一基板卡盤上; 使由該第一基板卡盤所固持的該基板上的材料與平坦化板接觸; 將相互接觸的該基板與該平坦化板從該第一基板卡盤移動到第二基板卡盤;以及 使該平坦化板從由該第二基板卡盤所固持的該基板上的該材料分離。
- 如請求項20之方法,還包括 在該移動或該分離的期間將另一個基板固持在該第一基板卡盤上。
- 一種製造物品的方法,包括: 將基板固持在第一基板卡盤上; 使由該第一基板卡盤所固持的該基板上的材料與平坦化板接觸; 將相互接觸的該基板與該平坦化板從該第一基板卡盤移動到第二基板卡盤; 使該平坦化板從由該第二基板卡盤所固持的該基板上的該材料分離;以及 藉由處理該基板製造出該物品。
- 一種平坦化系統,包括: 第一基板卡盤,配置為固持基板; 第二基板卡盤,配置為固持該基板; 載台,配置為移動該第一基板卡盤和該第二基板卡盤; 平坦化頭,配置為固持平坦化板;以及 控制單元,配置為控制該載台和該平坦化頭, 其中,該平坦化頭使該平坦化板與由該第一基板卡盤所固持的該基板上的材料接觸; 該平坦化頭固持相互接觸的該基板與該平坦化板,以藉由該載台將相互接觸的該基板與該平坦化板從該第一基板卡盤移動到該第二基板卡盤;並且 該平坦化頭使該平坦化板從由該第二基板卡盤所固持的該基板上的該材料分離。
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US17/564,710 US20230207326A1 (en) | 2021-12-29 | 2021-12-29 | Planarization process, apparatus and method of manufacturing an article |
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TW (1) | TW202331925A (zh) |
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